AY Sicsossemomes BD243A/B/C BD244A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS BD243B, BF243C,BD244B AND DB244C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD243A, BD243B and BD248C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244A, BD244B and BD244C respectively. INTERNAL SCHEMATIC DIAGRAM Ca (2) Co (2) (1) (1) B B EO(3) Eo (3) SCOBSEO SC08810 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN | BD243A BD243B BD243C PNP | BD244A BD244B BD244C Vcso |Collector-Base Voltage (le = 0) 60 80 100 Vv Vceo |Collector-Emitter Voltage (lp = 0) 60 80 100 Vv Veso |Emitter-Base Voltage (Ic = 0) Vv Ic Collector Current A lom Collector Peak Current 10 A lB Base Current A Ptot |Total Dissipation at Tc < 25 C 65 w Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. October 1995 1/4BD243A/B/C/BD244A/B/C THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max 1.92 C/W Rthj-amb | Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unlessotherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit IcES Collector Cut-off Voce = rated Vceo 0.4 mA Current (Vee = 0) IcEO Collector Cut-off for BD243A/BD244A Vce =30V 0.7 mA Current (lp = 0) for BD243B/BD244B- Vce = 60 V 0.7 mA for BD243C/BD244C Vce =60V 0.7 mA lEBO Emitter Cut-off Current |Vegs =5 V 1 mA (Ic = 0) VocEo(sus)* | Collector-Emitter lo = 30 MA Sustaining Voltage for BD243A/BD244A 60 Vv for BD243B/BD244B 80 Vv for BD243C/BD244C 100 Vv Vce(saty* | Collector-Emitter Ic=6A Ip=1mA 1.5 Vv Saturation Voltage VBE* Base-Emitter Voltage |Ic=6A Voce =4V 2 Vv hre* DC Current Gain Ic=0.3A VoeE=4V 30 150 lc=3A VceE=4V 15 hfe Small Signal Current Ic=0.5A Vce=10V f=1MHz 3 Gain Ic=0.5A Voce =10V f=1KHz 20 Pulsed: Pulse duration = 300 pis, duty cycle < 2% For PNP types voltage and current values are negative. 2/4 MICROELECTRONICSBD243A/B/C/BD244A/B/C TO-220 MECHANICAL DATA D1 3/4 AS] Sicpon scmoncsBD243A/B/C/BD244A/B/C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compments in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AS] Sicpon scmoncs