BZX55-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 25-Nov-11 1Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
FEATURES
Very sharp reverse characteristic
Low reverse current level
Very high stability
•Low noise
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 75 V
Test current IZT 2.5; 5 mA
VZ specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZX55-series BZX55-series-TR 10 000 per 13" reel 30 000/box
BZX55-series BZX55-series-TAP 10 000 per ammopack
(52 mm tape) 30 000/box
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
DO-35 125 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation l = 4 mm, TL = 25 °C Ptot 500 mW
Zener current IZPtot/VZmA
Junction to ambient air l = 4 mm, TL = constant RthJA 300 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
Forward voltage (max.) IF = 200 mA VF1.5 V
BZX55-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 25-Nov-11 2Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IZT2
IR at VRZZ at IZT1 ZZK at IZT2
TKVZ
Tamb =
25 °C
Tamb =
150 °C f = 1 kHz
VmA μA V%/K
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZX55C2V4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06
BZX55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06
BZX55C3V0 2.8 3.0 3.2 5 1 < 4 < 40 1 < 85 < 600 - 0.08 - 0.05
BZX55C3V3 3.1 3.3 3.5 5 1 < 2 < 40 1 < 85 < 600 - 0.08 - 0.05
BZX55C3V6 3.4 3.6 3.8 5 1 < 2 < 40 1 < 85 < 600 - 0.08 - 0.05
BZX55C3V9 3.7 3.9 4.1 5 1 < 2 < 40 1 < 85 < 600 - 0.08 - 0.05
BZX55C4V3 4 4.3 4.6 5 1 < 1 < 20 1 < 75 < 600 - 0.06 - 0.03
BZX55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 60 < 600 - 0.05 0.02
BZX55C5V1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 35 < 550 - 0.02 0.02
BZX55C5V6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 25 < 450 - 0.05 0.05
BZX55C6V2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06
BZX55C6V8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07
BZX55C7V5 7 7.5 7.9 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07
BZX55C8V2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08
BZX55C9V1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09
BZX55C10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1
BZX55C11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11
BZX55C12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11
BZX55C13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11
BZX55C15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11
BZX55C16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11
BZX55C18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11
BZX55C20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11
BZX55C22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12
BZX55C24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12
BZX55C27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12
BZX55C30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12
BZX55C33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12
BZX55C36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12
BZX55C39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12
BZX55C43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12
BZX55C47 44 47 50 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12
BZX55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12
BZX55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12
BZX55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12
BZX55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12
BZX55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
BZX55-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 25-Nov-11 3Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IZT2
IR at VRZZ at IZT1 ZZK at IZT2
TKVZ
Tamb =
25 °C
Tamb =
150 °C f = 1 kHz
VmA μA V%/K
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZX55B2V4 2.35 2.4 2.45 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06
BZX55B2V7 2.64 2.7 2.76 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06
BZX55B3V0 2.94 3.0 3.06 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05
BZX55B3V3 3.24 3.3 3.36 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZX55B3V6 3.52 3.6 3.68 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZX55B3V9 3.82 3.9 3.98 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZX55B4V3 4.22 4.3 4.38 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03
BZX55B4V7 4.6 4.7 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02
BZX55B5V1 5 5.1 5.2 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02
BZX55B5V6 5.48 5.6 5.72 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05
BZX55B6V2 6.08 6.2 6.32 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06
BZX55B6V8 6.66 6.8 6.94 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07
BZX55B7V5 7.35 7.5 7.65 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07
BZX55B8V2 8.04 8.2 8.36 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08
BZX55B9V1 8.92 9.1 9.28 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09
BZX55B10 9.8 10 10.2 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1
BZX55B11 10.78 11 11.22 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11
BZX55B12 11.76 12 12.24 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11
BZX55B13 12.74 13 13.26 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11
BZX55B15 14.7 15 15.3 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11
BZX55B16 15.7 16 16.3 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11
BZX55B18 17.64 18 18.36 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11
BZX55B20 19.6 20 20.4 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11
BZX55B22 21.55 22 22.45 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12
BZX55B24 23.5 24 24.5 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12
BZX55B27 26.4 27 27.6 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12
BZX55B30 29.4 30 30.6 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12
BZX55B33 32.4 33 33.6 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12
BZX55B36 35.3 36 36.7 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12
BZX55B39 38.2 39 39.8 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12
BZX55B43 42.1 43 43.9 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12
BZX55B47 46.1 47 47.9 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12
BZX55B51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12
BZX55B56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12
BZX55B62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12
BZX55B68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12
BZX55B75 73 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
BZX55-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 25-Nov-11 4Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Thermal Resistance vs. Lead Length
Fig. 2 - Total Power Dissipation vs. Ambient Temperature
Fig. 3 - Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Fig. 4 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage
Fig. 6 - Diode Capacitance vs. Z-Voltage
95 9611
0 5 10 15
0
100
200
300
400
500
20
ll
RthJA - Therm. Resist. Junction Ambient (K/W)
I - Lead Length (mm)
TL = constant
0 120 160
0
100
300
400
500
600
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
200
95 9602
200
80
40
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TK
VZ
= 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
IZ = 5 mA
0 10 203040 50
TKVZ - Temperature Coefficient
of VZ (10-4/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
05
BZX55-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 25-Nov-11 5Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Z-Current vs. Z-Voltage
Fig. 9 - Z-Current vs. Z-Voltage
Fig. 10 - Differential Z-Resistance vs. Z-Voltage
Fig. 11 - Thermal Response
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tj = 25 °C
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
046 12
VZ - Z-Voltage (V)
15 20 25 30
0
10
20
30
40
50
IZ - Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
Ptot = 500 mW
Tamb = 25 °C
0 101520
1
10
100
1000
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
1
10
100
1000
Zthp - Thermal Resistance for Pulse Cond. (KW)
tp - Pulse Length (ms) 95 9603
10-1 100101102
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse RthJA = 300 K/W
T = Tjmax - Tamb
iZM = (- VZ + (VZ
2 + 4rzj x T/Zthp) 1/2)/(2rzj)
BZX55-Series
www.vishay.com Vishay Semiconductors
Rev. 1.7, 25-Nov-11 6Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO-35
94 9366
26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min.
0.55. (0.022) max.
Cathode identification
1.7 (0.067)
1.5 (0.059)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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