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Doc. No. 5SYA1601-03 Aug 02
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Collector- Em itt er Voltage VCES 1200 V
DC Collector Current IC25 A
Maximum Collector Curr ent ICM Limited by Tjmax 50 A
Operating Temperature Tj-40 ... +150 °C
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Tj = 25 °C 2.1 2.5 2.85 V
Collector-Emitter Saturation
Voltage VCE(sat) IC = 25 A,
VGE = 15 V Tj = 125 °C 2.7 V
Tj = 25 °C 100 µACollector-Emitter leakage
Current ICES VCE = 1200 V,
VGE = 0 V Tj = 125 °C 50 µA
Gate-Emitt er leakag e Curr ent IGES VCE = 0 V, VGE = ±20 V ±200 nA
Gate-Emitter Threshold Vol tage VGE(TO) IC = 1 mA , V CE = VGE 4.5 6.5 V
Turn-on delay time td(on) 90 ns
Rise time tr70 ns
Turn-on switching energy Eon 3.5 mJ
Turn -off del a y time td(off) 480 ns
Fall time tf60 ns
Turn-off switching energy Eoff
IC = 25 A, VCC = 600 V,
RG 9GE = ±15 V,
Tj = 125 °C, Lσ = 50 nH,
Inductive load,
FWD : ½ 5SLX12E1200
3mJ
Intern a l gate re sistance RGint 10
Input capacitance Cies Vce = 25 V, Vge = 0 V, f = 1 MHz 2 nF
Tota l gate charge Qge Vge = -15 .. +15 V 260 nC
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