TPS842A(F),TPS844(F)
2007-10-01
1
TOSHIBA Photo-IC Silicon Epitaxial Planar
TPS842A(F),TPS844(F)
Photoelectric Switches
Copiers, Printers, and Facsimiles
Vending Machines
Handy Terminals
The TPS842A(F) and TPS844(F) represent a Si
photo IC of digital output type that integrates a
photodiode, amplifier circuit, and Schmitt trigger
circuit into a single chip.
These devices are low voltage drive types, and they
allow construction of low voltage systems which thus
consume less power.
These devices respond faster than the
phototransistor type. They output a low when light is
input.
• Compact side-view epoxy resin package
• Operates over a wide supply voltage range
: VCC = 2.7 to 15 V
• High speed response
: tpLH = 15 μs, tpHL = 9 μs (max)
• High sensitivity: 0.3 mW/cm2 (max)
• Can be directly connected to TTL and CMOS.
• Digital output : TPS842A(F) …. open collector
TPS844(F) …. with a pull-up
resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Supply voltage VCC 15 V
TPS842A(F) 15
Output voltage TPS844(F) VO
=VCC V
Output current IO 16 mA
Output current derating (Ta > 25°C) ΔIO/°C −0.213 mA/°C
Power dissipation P 250 mW
Power dissipation derating
(Ta > 25°C) ΔP/°C −3.33 mW/°C
Operating temperature range Topr −30 to 95 °C
Storage temperature range Tstg −40 to 100 °C
Soldering temperature (5s) (Note 1) Tsol 260 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: At the location of 1.3 mm from the resin package bottom.
Unit: mm
TOSHIBA 0-3H1
Weight: 0.12 g (typ.)
TPS842A(F),TPS844(F)
2007-10-01
2
Pin Connection
Opto-Electrical Characteristics
(Ta = −30 to 95°C, VCC = 2.7 to 15 V, typical values are all at 25°C.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Supply voltage VCC ⎯ 2.7 ⎯ 15 V
High level supply current ICCH E = 0 ⎯ 0.5 1.2 mA
TPS842A(F) ⎯ 0.9 2
Low level supply
current TPS844(F)
ICCL E = 2 mW/cm2 (Note 2)
⎯ 2.9 4
mA
High level output
current TPS842A(F) IOH V
O = 15 V, E = 0 ⎯ ⎯ 6.3 μA
High level output
voltage TPS844(F) VOH E = 0 0.9*VCC ⎯ ⎯ V
Low level output voltage VOL E = 2 mW/cm2
IOL = 16 mA (Note 2) ⎯ 0.07 0.4 V
Ta = 25°C ⎯ 0.2 0.3
“H→L” Threshold radiant incidence EHL
⎯ ⎯ ⎯ 0.6
mW/
cm2
Hysteresis ratio EHL/ELH Ta = 25°C 1.1 1.5 2 ⎯
Peak sensitivity wavelength λP ⎯ ⎯ 900 ⎯ nm
“L→H” tpLH ⎯ ⎯ 15
Propagation
delay time “H→L” tpHL ⎯ ⎯ 9
Rise time tr ⎯ 0.8 3
Switching
time
Fall time tf
Ta = 25°C
VCC = 3.3 V
E = 2 mW/cm2
RL = 10 kΩ (Note 3)
⎯ 0.02 0.5
μs
Note 2: CIE standard light source A (standard tungsten bulb) with color temperature = 2856 K.
TPS842A(F) TPS844(F)
TPS842A(F),TPS844(F)
2007-10-01
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Note 3: Switching time measurement circuit and waveform.
TPS842A(F)
TPS844(F)
Precautions
• When you consider a combined use with an LED, be sure to use an infrared LED. Visible rays in wavelength of
less than 700 nm cannot be detected.
• Make sure the shielding plate that is used to detect positions is manufactured from materials with superior
light-shielding characteristics. Insufficient shield can cause malfunction.
• Photo ICs contain a high-sensitivity amplifier. Toshiba recommends connecting a capacitor of about 0.01 μF that
has good high-frequency characteristics between VCC and GND near the device to prevent unwanted oscillation.
• Please install so that disturbance light is not irradiated by these products.
When disturbance light (incandescence light etc.) 700 nm or more is detected, it may incorrect-operate. Please
perform sufficient evaluation and verification by set.
• During 100 μs after turning on VCC, output voltage changes for stabilizing the inner circuit.
(TPS842A(F))
(TPS844(F))
(INFRARED LED)
AMP
VOL.REG.
(INFRARED LED)
AMP
VOL.REG.
TPS842A(F),TPS844(F)
2007-10-01
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1
−40
10
1000
100
−20 40 60 20
1000
VCC = 3.3 V
IOL = 16 mA
8 mA
5 mA
1 mA
80
0.01
1
0.1
10010
1
VCC = 3.3V
Ta = 25°C
P – Ta
IO – Ta
V
OL – IOL (typ.)
V
OL – Ta (typ.)
Relative ELH, EHL – VCC (typ.)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Low level output current IOL (mA)
Ambient temperature Ta (°C)
Supply voltage VCC (V)
Allowable output current IO (mA)
Allowable power dissipation P (mW)
Low level output voltage VOL (mV)
Low level output voltage VOL (V)
Relative threshold radiant incidence
0
−20
150
10020
200
250
0 60 80 40
50
100
300
0
−20
12
10020
16
0 60 80 40
4
8
20
0
0
0.6
208
1.0
4 16 12
1.4
ELH
EHL
Ta = 25°C
1.2
0.8
0.4
0.2
0
−40
0.6
12020
1.0
0 80 40
1.8
ELH
EHL
VCC = 3.3 V
1.4
0.8
0.4
0.2
1.6
1.2
−20 100 60
Relative ELH, EHL – Ta (typ.)
Ambient temperature Ta (°C)
Relative threshold radiant incidence
TPS842A(F),TPS844(F)
2007-10-01
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0
1
4
100
6
10
10
tpHL
VCC = 3.3 V
RL = 10 kΩ
Ta = 25°C
8
5
3
2
9
7
1
tpLH
t
pLH, tpHL – E/EHL (typ.)
Threshold radiant incidence ratio E/EHL
Propagation delay time tpLH, tpHL (μs)
Spectral response (typ.)
wavelength λ (nm)
Relative sensitivity
0.01
0.1 1
10
VCC = 3.3 V
Ta = 25°C
E = 2 mW/cm2
0.1
1
tr
10
tf
100
t
r, tf – RL (typ.)
Directional sensitivity characteristic
(typ.)
Load resistance RL (kΩ)
Relative sensitivity
Rise and fall time tr, rf (μs)
TPS842A(F),TPS844(F)
2007-10-01
6
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