High Voltage, Latch-Up Proof, 4-/8-Channel Multiplexers ADG5208-EP/ADG5209-EP Enhanced Product FEATURES FUNCTIONAL BLOCK DIAGRAM S1A S1 DA S4A D S1B DB S4B S8 1-OF-8 DECODER 1-OF-4 DECODER A0 A0 A1 A2 EN A1 EN Figure 1. Each switch conducts equally well in both directions when on, and each switch has an input signal range that extends to the power supplies. In the off condition, signal levels up to the supplies are blocked. The ADG5208-EP/ADG5209-EP do not have VL pins; instead, the logic power supply is generated internally by an on-chip voltage generator. APPLICATIONS Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching Communication systems Additional application and technical information can be found in the ADG5208/ADG5209 data sheet. PRODUCT HIGHLIGHTS 1. GENERAL DESCRIPTION The ADG5208-EP/ADG5209-EP are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG5208-EP switches one of eight inputs to a common output, as determined by the 3-bit binary address lines, A0, A1, and A2. The ADG5209-EP switches one of four differential inputs to a common differential output, as determined by the 2-bit binary address lines, A0 and A1. An EN input on both devices enables or disables the device. When EN is disabled, all channels switch off. The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make these devices suitable for video signal switching. Rev. C ADG5209-EP ADG5208-EP 11475-001 Latch-up proof 2.9 pF off source capacitance 34 pF off drain capacitance 0.2 pC charge injection Low on resistance: 160 typical 9 V to 22 V dual-supply operation 9 V to 40 V single-supply operation 48 V supply maximum ratings Fully specified at 15 V, 20 V, +12 V, and +36 V VSS to VDD analog signal range Human body model (HBM) ESD rating 8 kV I/O port to supplies 2 kV I/O port to I/O port 8 kV all other pins Supports defense and aerospace applications (AQEC standard) Military temperature range: -55C to +125C Controlled manufacturing baseline One assembly and test site One fabrication site Enhanced product change notification Qualification data available on request 2. 3. 4. 5. 6. Trench Isolation Guards Against Latch-Up. A dielectric trench separates the P and N channel transistors to prevent latch-up even under severe overvoltage conditions. 0.2 pC Charge Injection. Dual-Supply Operation. For applications where the analog signal is bipolar, the ADG5208-EP/ADG5209-EP can be operated from dual supplies of up to 22 V. Single-Supply Operation. For applications where the analog signal is unipolar, the ADG5208-EP/ADG5209-EP can be operated from a single rail power supply of up to 40 V. 3 V Logic-Compatible Digital Inputs. VINH = 2.0 V, VINL = 0.8 V. No VL Logic Power Supply Required. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 (c)2013-2017 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADG5208-EP/ADG5209-EP Enhanced Product TABLE OF CONTENTS Features .............................................................................................. 1 36 V Single Supply.........................................................................6 Applications ....................................................................................... 1 Continuous Current per Channel, Sx, D, or Dx ........................8 General Description ......................................................................... 1 Absolute Maximum Ratings ............................................................9 Functional Block Diagram .............................................................. 1 ESD Caution...................................................................................9 Product Highlights ........................................................................... 1 Pin Configurations and Function Descriptions ......................... 10 Revision History ............................................................................... 2 Typical Performance Characteristics ........................................... 12 Specifications..................................................................................... 3 Test Circuits ..................................................................................... 16 15 V Dual Supply ....................................................................... 3 Outline Dimensions ....................................................................... 19 20 V Dual Supply ....................................................................... 4 Ordering Guide .......................................................................... 19 12 V Single Supply ........................................................................ 5 REVISION HISTORY 11/2017--Rev. B to Rev. C Changes to Ordering Guide .......................................................... 19 8/2014--Rev. A to Rev. B Changes to Table 1 ............................................................................ 3 Changes to Table 2 ............................................................................ 4 Changes to Table 3 ............................................................................ 5 Changes to Table 4 ............................................................................ 6 Changes to Figure 4 to Figure 9 .................................................... 12 Changes to Figure 10 and Figure 11 ............................................. 13 Changes to Figure 16 to Figure 21 ................................................ 14 Changes to Figure 22 to Figure 24 ................................................ 15 10/2013--Rev. 0 to Rev. A Change to Operating Temperature Range, Table 7 ...................... 9 Change to Ordering Guide ............................................................ 19 7/2013--Revision 0: Initial Version Rev. C | Page 2 of 20 Enhanced Product ADG5208-EP/ADG5209-EP SPECIFICATIONS 15 V DUAL SUPPLY VDD = +15 V 10%, VSS = -15 V 10%, GND = 0 V, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25C 160 200 3.5 8 40 50 0.005 0.1 0.005 0.1 0.01 0.2 -40C to +85C -55C to +125C Unit Test Conditions/Comments VDD to VSS V typ max typ VS = 10 V, IS = -1 mA; see Figure 26 VDD = +13.5 V, VSS = -13.5 V VS = 10 V, IS = -1 mA 250 280 9 10 65 70 0.2 0.4 0.4 1.4 0.5 1.4 2.0 0.8 0.002 0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 1 Transition Time, tTRANSITION 3 nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ VS = 10 V, IS = -1 mA VDD = +16.5 V, VSS = -16.5 V VS = 10 V, VD = 10 V; see Figure 28 VS = 10 V, VD = 10 V; see Figure 28 VS = VD = 10 V; see Figure 25 VIN = VGND or VDD Charge Injection, QINJ 0.2 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation -86 dB typ Channel-to-Channel Crosstalk -80 dB typ -3 dB Bandwidth ADG5208-EP ADG5209-EP Insertion Loss 110 240 -6.4 MHz typ MHz typ dB typ 2.9 pF typ RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 30 VS = 0 V, f = 1 MHz 34 17 pF typ pF typ VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz tON (EN) tOFF (EN) Break-Before-Make Time Delay, tD 150 180 125 150 160 185 55 max typ max 210 245 185 215 210 230 20 CS (Off ) CD (Off ) ADG5208-EP ADG5209-EP Rev. C | Page 3 of 20 RL = 300 , CL = 35 pF VS = 10 V; see Figure 31 RL = 300 , CL = 35 pF VS = 10 V; see Figure 33 RL = 300 , CL = 35 pF VS = 10 V; see Figure 33 RL = 300 , CL = 35 pF VS1 = VS2 = 10 V; see Figure 32 VS = 0 V, RS = 0 , CL = 1 nF; see Figure 34 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 27 RL = 50 , CL = 5 pF; see Figure 30 ADG5208-EP/ADG5209-EP Parameter CD (On), CS (On) ADG5208-EP ADG5209-EP POWER REQUIREMENTS IDD ISS 25C Enhanced Product -40C to +85C 37 21 45 55 0.001 80 1 9/22 VDD/VSS 1 -55C to +125C Unit Test Conditions/Comments pF typ pF typ VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VDD = +16.5 V, VSS = -16.5 V Digital inputs = 0 V or VDD A typ A max A typ A max V min/V max Digital inputs = 0 V or VDD GND = 0 V Guaranteed by design; not subject to production test. 20 V DUAL SUPPLY VDD = +20 V 10%, VSS = -20 V 10%, GND = 0 V, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25C 140 160 3.5 8 34 45 0.005 0.1 0.005 0.1 0.01 0.2 -40C to +85C -55C to +125C Unit Test Conditions/Comments VDD to VSS V typ max typ VS = 15 V, IS = -1 mA; see Figure 26 VDD = +18 V, VSS = -18 V VS = 15 V, IS = -1 mA 200 230 9 10 55 60 0.2 0.4 0.4 1.4 0.5 1.4 2.0 0.8 0.002 0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 1 Transition Time, tTRANSITION 3 nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ Charge Injection, QINJ 0.4 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation -86 dB typ Channel-to-Channel Crosstalk -80 dB typ tON (EN) tOFF (EN) Break-Before-Make Time Delay, tD 140 170 120 140 160 185 45 max typ max 195 220 170 195 205 220 20 Rev. C | Page 4 of 20 VS = 15 V, IS = -1 mA VDD = +22 V, VSS = -22 V VS = 15 V, VD = 15 V; see Figure 28 VS = 15 V, VD = 15 V; see Figure 28 VS = VD = 15 V; see Figure 25 VIN = VGND or VDD RL = 300 , CL = 35 pF VS = 10 V; see Figure 31 RL = 300 , CL = 35 pF VS = 10 V; see Figure 33 RL = 300 , CL = 35 pF VS = 10 V; see Figure 33 RL = 300 , CL = 35 pF VS1 = VS2 = 10 V; see Figure 32 VS = 0 V, RS = 0 , CL = 1 nF; see Figure 34 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 27 Enhanced Product ADG5208-EP/ADG5209-EP Parameter -3 dB Bandwidth ADG5208-EP ADG5209-EP Insertion Loss 25C 121 225 -5.6 MHz typ MHz typ dB typ CS (Off ) CD (Off ) ADG5208-EP ADG5209-EP CD (On), CS (On) ADG5208-EP ADG5209-EP POWER REQUIREMENTS IDD 2.8 pF typ RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 30 VS = 0 V, f = 1 MHz 33 17 pF typ pF typ VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz 36 21 pF typ pF typ VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VDD = +22 V, VSS = -22 V Digital inputs = 0 V or VDD ISS -40C to +85C 50 70 0.001 Unit 1 9/22 A typ A max A typ A max V min/V max -55C to +125C Unit 0 V to VDD V typ 120 VDD/VSS 1 -55C to +125C Test Conditions/Comments RL = 50 , CL = 5 pF; see Figure 30 Digital inputs = 0 V or VDD GND = 0 V Guaranteed by design; not subject to production test. 12 V SINGLE SUPPLY VDD = 12 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 3. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, RON On-Resistance Flatness, RFLAT (ON) 25C -40C to +85C 350 610 700 max typ 20 160 280 22 24 VS = 0 V to 10 V, IS = -1 mA 335 370 max typ max nA typ VDD = 13.2 V, VSS = 0 V VS = 1 V/10 V, VD = 10 V/1 V; see Figure 28 0.005 0.1 0.005 0.2 Drain Off Leakage, ID (Off ) 0.1 0.01 0.2 0.4 1.4 0.5 1.4 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 0.4 2.0 0.8 0.002 0.1 Digital Input Capacitance, CIN VS = 0 V to 10 V, IS = -1 mA; see Figure 26 VDD = 10.8 V, VSS = 0 V VS = 0 V to 10 V, IS = -1 mA 500 5 LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Channel On Leakage, ID (On), IS (On) Test Conditions/Comments 3 Rev. C | Page 5 of 20 nA max nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 28 nA max nA typ nA max VS = VD = 1 V/10 V; see Figure 25 V min V max A typ A max pF typ VIN = VGND or VDD ADG5208-EP/ADG5209-EP Parameter DYNAMIC CHARACTERISTICS 1 Transition Time, tTRANSITION 25C Enhanced Product -40C to +85C -55C to +125C 295 335 280 320 225 245 Test Conditions/Comments RL = 300 , CL = 35 pF VS = 8 V; see Figure 31 RL = 300 , CL = 35 pF VS = 8 V; see Figure 33 RL = 300 , CL = 35 pF VS = 8 V; see Figure 33 RL = 300 , CL = 35 pF VS1 = VS2 = 8 V; see Figure 32 VS = 6 V, RS = 0 , CL = 1 nF; see Figure 34 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 27 RL = 50 , CL = 5 pF; see Figure 30 Break-Before-Make Time Delay, tD 200 250 180 225 165 200 95 Charge Injection, QINJ 0.2 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation -86 dB typ Channel-to-Channel Crosstalk -80 dB typ -3 dB Bandwidth ADG5208-EP ADG5209-EP Insertion Loss 95 180 -8.9 MHz typ MHz typ dB typ 3.3 pF typ RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 30 VS = 6 V, f = 1 MHz 38 19 pF typ pF typ VS = 6 V, f = 1 MHz VS = 6 V, f = 1 MHz 41 24 pF typ pF typ VS = 6 V, f = 1 MHz VS = 6 V, f = 1 MHz VDD = 13.2 V Digital inputs = 0 V or VDD tON (EN) tOFF (EN) 45 CS (Off ) CD (Off ) ADG5208-EP ADG5209-EP CD (On), CS (On) ADG5208-EP ADG5209-EP POWER REQUIREMENTS IDD 40 50 VDD 1 Unit 75 9/40 A typ A max V min/V max -55C to +125C Unit 0 V to VDD V typ GND = 0 V, VSS = 0 V Guaranteed by design; not subject to production test. 36 V SINGLE SUPPLY VDD = 36 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 4. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off ) 25C -40C to +85C 150 Test Conditions/Comments VS = 0 V to 30 V, IS = -1 mA; see Figure 26 VDD = 32.4 V, VSS = 0 V VS = 0 V to 30 V, IS = -1 mA 170 3.5 215 245 max typ 8 35 55 9 10 VS = 0 V to 30 V, IS = -1 mA 65 70 max typ max nA typ VDD = 39.6 V, VSS = 0 V VS = 1 V/30 V, VD = 30 V/1 V; see Figure 28 0.005 0.1 0.2 0.4 Rev. C | Page 6 of 20 nA max Enhanced Product Parameter Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH ADG5208-EP/ADG5209-EP 25C 0.005 -40C to +85C -55C to +125C Unit nA typ 0.1 0.01 0.2 0.4 1.4 VS = VD = 1 V/30 V; see Figure 25 0.5 1.4 nA max nA typ nA max V min V max A typ A max pF typ VIN = VGND or VDD 2.0 0.8 0.002 0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 1 Transition Time, tTRANSITION 3 Break-Before-Make Time Delay, tD 170 205 150 180 180 225 55 Charge Injection, QINJ 0.3 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation -86 dB typ Channel-to-Channel Crosstalk -80 dB typ -3 dB Bandwidth ADG5208-EP ADG5209-EP Insertion Loss 105 195 -6.2 MHz typ MHz typ dB typ 2.7 pF typ RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 30 VS = 18 V, f = 1 MHz 32 16 pF typ pF typ VS = 18 V, f = 1 MHz VS = 18 V, f = 1 MHz 35 20 pF typ pF typ VS = 18 V, f = 1 MHz VS = 18 V, f = 1 MHz VDD = 39.6 V Digital inputs = 0 V or VDD tON (EN) tOFF (EN) 225 235 195 215 225 230 20 CS (Off ) CD (Off ) ADG5208-EP ADG5209-EP CD (On), CS (On) ADG5208-EP ADG5209-EP POWER REQUIREMENTS IDD 80 100 VDD 1 Test Conditions/Comments VS = 1 V/30 V, VD = 30 V/1 V; see Figure 28 155 9/40 Guaranteed by design; not subject to production test. Rev. C | Page 7 of 20 A typ A max V min/V max RL = 300 , CL = 35 pF VS = 18 V; see Figure 31 RL = 300 , CL = 35 pF VS = 18 V; see Figure 33 RL = 300 , CL = 35 pF VS = 18 V; see Figure 33 RL = 300 , CL = 35 pF VS1 = VS2 = 18 V; see Figure 32 VS = 18 V, RS = 0 , CL = 1 nF; see Figure 34 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 , CL = 5 pF, f = 1 MHz; see Figure 27 RL = 50 , CL = 5 pF; see Figure 30 GND = 0 V, VSS = 0 V ADG5208-EP/ADG5209-EP Enhanced Product CONTINUOUS CURRENT PER CHANNEL, Sx, D, OR Dx Table 5. ADG5208-EP Parameter CONTINUOUS CURRENT, Sx OR D VDD = +15 V, VSS = -15 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) VDD = +20 V, VSS = -20 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) VDD = 12 V, VSS = 0 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) VDD = 36 V, VSS = 0 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) 25C 85C 125C Unit 40 69 24 37 14.5 18 mA maximum mA maximum 42 75 26.5 40 14.5 18 mA maximum mA maximum 28 40 19 25 12 14.5 mA maximum mA maximum 40 72 26 39 14.5 18 mA maximum mA maximum 25C 85C 125C Unit 29 51 19 30 12 16 mA maximum mA maximum 30 55 20 32 12.5 17 mA maximum mA maximum 20 29 14 20 10 12.5 mA maximum mA maximum 30 54 20 31 12.5 17 mA maximum mA maximum Table 6. ADG5209-EP Parameter CONTINUOUS CURRENT, Sx OR Dx VDD = +15 V, VSS = -15 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) VDD = +20 V, VSS = -20 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) VDD = 12 V, VSS = 0 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) VDD = 36 V, VSS = 0 V TSSOP (JA = 112.6C/W) LFCSP (JA = 30.4C/W) Rev. C | Page 8 of 20 Enhanced Product ADG5208-EP/ADG5209-EP ABSOLUTE MAXIMUM RATINGS TA = 25C, unless otherwise noted. Table 7. Parameter VDD to VSS VDD to GND VSS to GND Analog Inputs1 Digital Inputs 1 Peak Current, Sx, D, or Dx Pins ADG5208-EP ADG5209-EP Continuous Current, Sx, D, or Dx Pins2 Temperature Range Operating Storage Junction Temperature Thermal Impedance, JA 16-Lead TSSOP (4-Layer Board) 16-Lead LFCSP (4-Layer Board) Reflow Soldering Peak Temperature, Pb Free HBM ESD I/O Port to Supplies I/O Port to I/O Port All Other Pins 1 2 Rating 48 V -0.3 V to +48 V +0.3 V to -48 V VSS - 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first VSS - 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Only one absolute maximum rating can be applied at any one time. ESD CAUTION 126 mA (pulsed at 1 ms, 10% duty cycle maximum) 92 mA (pulsed at 1 ms, 10% duty cycle maximum) Data + 15% -55C to +125C -65C to +150C 150C 112.6C/W 30.4C/W 260(+0/-5)C 8 kV 2 kV 8 kV Overvoltages at the Ax, EN, Sx, D, and Dx pins are clamped by internal diodes. Limit current to the maximum ratings given. See Table 5 and Table 6. Rev. C | Page 9 of 20 ADG5208-EP/ADG5209-EP Enhanced Product PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS 16 15 A2 VSS 3 14 GND ADG5208-EP A1 13 VDD 12 S5 S3 6 11 S6 S4 7 10 S7 D 8 9 S8 S1 4 S2 5 TOP VIEW (Not to Scale) 11475-002 A0 1 EN 2 Figure 2. ADG5208-EP Pin Configuration (TSSOP) Table 8. ADG5208-EP Pin Function Descriptions Pin No. 1 2 Mnemonic A0 EN 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VSS S1 S2 S3 S4 D S8 S7 S6 S5 VDD GND A2 A1 Description Logic Control Input. Active High Digital Input. When low, the device is disabled and all switches are off. When high, the Ax logic inputs determine the on switches. Most Negative Power Supply Potential. In single-supply applications, this pin can be connected to ground. Source Terminal 1. This pin can be an input or an output. Source Terminal 2. This pin can be an input or an output. Source Terminal 3. This pin can be an input or an output. Source Terminal 4. This pin can be an input or an output. Drain Terminal. This pin can be an input or an output. Source Terminal 8. This pin can be an input or an output. Source Terminal 7. This pin can be an input or an output. Source Terminal 6. This pin can be an input or an output. Source Terminal 5. This pin can be an input or an output. Most Positive Power Supply Potential. Ground (0 V) Reference. Logic Control Input. Logic Control Input. Table 9. ADG5208-EP Truth Table A2 X1 0 0 0 0 1 1 1 1 1 A1 X1 0 0 1 1 0 0 1 1 A0 X1 0 1 0 1 0 1 0 1 EN 0 1 1 1 1 1 1 1 1 X is don't care. Rev. C | Page 10 of 20 On Switch None 1 2 3 4 5 6 7 8 Enhanced Product ADG5208-EP/ADG5209-EP A0 1 16 A1 EN 2 15 GND S2A 5 ADG5209-EP TOP VIEW (Not to Scale) 14 VDD 13 S1B 12 S2B S3A 6 11 S3B S4A 7 10 S4B DA 8 9 DB 11475-004 VSS 3 S1A 4 Figure 3. ADG5209-EP Pin Configuration (TSSOP) Table 10. ADG5209-EP Pin Function Descriptions Pin No. 1 2 Mnemonic A0 EN 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VSS S1A S2A S3A S4A DA DB S4B S3B S2B S1B VDD GND A1 Description Logic Control Input. Active High Digital Input. When low, the device is disabled and all switches are off. When high, Ax logic inputs determine the on switches. Most Negative Power Supply Potential. In single-supply applications, this pin can be connected to ground. Source Terminal 1A. This pin can be an input or an output. Source Terminal 2A. This pin can be an input or an output. Source Terminal 3A. This pin can be an input or an output. Source Terminal 4A. This pin can be an input or an output. Drain Terminal A. This pin can be an input or an output. Drain Terminal B. This pin can be an input or an output. Source Terminal 4B. This pin can be an input or an output. Source Terminal 3B. This pin can be an input or an output. Source Terminal 2B. This pin can be an input or an output. Source Terminal 1B. This pin can be an input or an output. Most Positive Power Supply Potential. Ground (0 V) Reference. Logic Control Input. Table 11. ADG5209-EP Truth Table A1 X1 0 0 1 1 1 A0 X1 0 1 0 1 EN 0 1 1 1 1 On Switch Pair None 1 2 3 4 X is don't care. Rev. C | Page 11 of 20 ADG5208-EP/ADG5209-EP Enhanced Product TYPICAL PERFORMANCE CHARACTERISTICS 160 TA = 25C VDD = +18V VSS = -18V 140 VDD = +20V VSS = -20V ON RESISTANCE () 100 80 VDD = +22V VSS = -22V 60 100 80 40 20 20 -20 -15 -10 -5 0 5 10 15 20 25 VS, VD (V) 0 0 VDD = +9V VSS = -9V 20 25 30 35 40 VDD = +15V VSS = -15V 150 100 VDD = +13.5V VSS = -13.5V VDD = +16.5V VSS = -16.5V VDD = +15V VSS = -15V TA = +125C 150 TA = +85C TA = +25C 100 TA = -40C TA = -55C 50 50 -15 -10 -5 0 5 10 15 20 VS, VD (V) 0 -15 11475-007 0 -20 VDD = 9V VSS = 0V 400 VDD = 10.8V VSS = 0V 300 250 200 VDD = 12V VSS = 0V 150 5 10 15 VDD = +20V VSS = -20V 150 ON RESISTANCE () 350 0 Figure 8. RON as a Function of VS, VD for Different Temperatures, 15 V Dual Supply 200 TA = 25C -5 VS, VD (V) Figure 5. RON as a Function of VS, VD (15 V Dual Supply) 450 -10 11475-008 ON RESISTANCE () VDD = 13.2V VSS = 0V TA = +125C TA = +85C 100 TA = +25C TA = -40C TA = -55C 50 100 0 0 2 4 6 8 10 12 VS, VD (V) 14 11475-005 50 0 -20 -15 -10 -5 0 5 10 15 20 VS, VD (V) Figure 9. RON as a Function of VS, VD for Different Temperatures, 20 V Dual Supply Figure 6. RON as a Function of VS, VD (12 V Single Supply) Rev. C | Page 12 of 20 11475-100 ON RESISTANCE () 15 200 200 ON RESISTANCE () 10 Figure 7. RON as a Function of VS, VD (36 V Single Supply) 250 TA = 25C 5 VS, VD (V) Figure 4. RON as a Function of VS, VD (20 V Dual Supply) 250 VDD = 39.6V VSS = 0V VDD = 36V VSS = 0V 60 40 0 -25 VDD = 32.4V VSS = 0V 120 11475-006 ON RESISTANCE () 120 TA = +25C 140 11475-009 160 Enhanced Product 100 VDD = 12V VSS = 0V 450 IS (OFF) + - 50 LEAKAGE CURRENT (pA) ON RESISTANCE () 400 TA = +125C 350 300 TA = +85C 250 TA = +25C 200 TA = -40C 150 TA = -55C ID (OFF) - + 0 IS (OFF) - + -50 -100 ID, IS (ON) + + ID, IS (ON) - - 100 -150 VDD = +20V VSS = -20V VBIAS = +15V/-15V 50 2 4 6 8 10 12 VS, VD (V) -200 11475-010 0 0 ID (OFF) + - 0 25 50 75 100 125 TEMPERATURE (C) 11475-015 500 ADG5208-EP/ADG5209-EP Figure 13. Leakage Currents vs. Temperature, 20 V Dual Supply Figure 10. RON as a Function of VS, VD for Different Temperatures, 12 V Single Supply 100 200 ID (OFF) - + IS (OFF) - + 0 TA = +25C 100 TA = -40C TA = -55C 50 0 5 10 15 20 25 30 35 VS, VD (V) -300 -400 -500 ID (OFF) + - VDD = 12V VSS = 0V VBIAS = 1V/10V ID, IS (ON) - - -700 0 25 50 75 100 125 TEMPERATURE (C) Figure 11. RON as a Function of VS, VD for Different Temperatures, 36 V Single Supply Figure 14. Leakage Currents vs. Temperature, 12 V Single Supply 50 200 IS (OFF) - + IS (OFF) + - ID, IS (ON) + + 0 IS (OFF) + - ID, IS (ON) + + -50 ID (OFF) + - ID (OFF) - + -100 ID, IS (ON) - - -150 -200 -250 25 50 75 100 125 TEMPERATURE (C) Figure 12. Leakage Currents vs. Temperature, 15 V Dual Supply ID (OFF) - + -400 -600 ID (OFF) + - -800 VDD = +15V VSS = -15V VBIAS = +10V/-10V 0 IS (OFF) - + -200 VDD = 36V VSS = 0V VBIAS = 1V/30V ID, IS (ON) - - -1000 0 25 50 75 100 125 TEMPERATURE (C) Figure 15. Leakage Currents vs. Temperature, 36 V Single Supply Rev. C | Page 13 of 20 11475-017 LEAKAGE CURRENT (pA) 0 11475-014 LEAKAGE CURRENT (pA) IS (OFF) + - -200 -600 VDD = 36V VSS = 0V 0 ID, IS (ON) + + -100 11475-016 TA = +85C 11475-011 ON RESISTANCE () LEAKAGE CURRENT (pA) TA = +125C 150 ADG5208-EP/ADG5209-EP Enhanced Product 0 0 -20 -40 -60 -80 NO DECOUPLING CAPACITORS -60 -80 -100 DECOUPLING CAPACITORS 100k 1M 10M 100M 1G FREQUENCY (Hz) -120 1k 11475-018 -140 10k 10k 10M -5 0 -6 -40 -7 ATTENUATION (dB) TA = 25C VDD = +15V -20 VSS = -15V BETWEEN S1 AND S2 -60 -80 -100 BETWEEN S1 AND S8 TA = 25C VDD = +15V VSS = -15V ADG5208-EP ADG5209-EP -8 -9 -10 1M 100k 10M 100M 1G FREQUENCY (Hz) -12 100k 11475-019 -140 10k 10M 1M 100M 1G FREQUENCY (Hz) 11475-023 -11 -120 Figure 20. Bandwidth Figure 17. Crosstalk vs. Frequency, 15 V Dual Supply 5 TA = 25C MUX (SOURCE TO DRAIN) TA = 25C DEMUX (DRAIN TO SOURCE) 4 30 25 CHARGE INJECTION (pC) VDD = +20V VSS = -20V VDD = +15V VSS = -15V 20 VDD = +36V VSS = 0V 15 10 VDD = +12V VSS = 0V 0 -20 -10 0 10 20 VDD = +15V VSS = -15V 2 VDD = +12V VSS = 0V 1 VDD = +36V VSS = 0V 0 -1 30 40 VS (V) 11475-020 5 VDD = +20V VSS = -20V 3 -2 -20 -10 0 10 20 30 40 VS (V) Figure 21. Charge Injection vs. Source Voltage, Source to Drain Figure 18. Charge Injection vs. Source Voltage, Drain to Source Rev. C | Page 14 of 20 11475-039 35 CHARGE INJECTION (pC) 1M Figure 19. ACPSRR vs. Frequency, 15 V Dual Supply Figure 16. Off Isolation vs. Frequency, 15 V Dual Supply 40 100k FREQUENCY (Hz) 11475-021 -100 -120 CROSSTALK (dB) TA = 25C VDD = +15V VSS = -15V -40 ACPSRR (dB) OFF ISOLATION (dB) TA = 25C VDD = +15V -20 VSS = -15V Enhanced Product ADG5208-EP/ADG5209-EP 300 60 VDD = +36V VSS = 0V VDD = +12V VSS = 0V 50 CAPACITANCE (pF) 250 TIME (ns) 200 150 VDD = +15V VSS = -15V 100 VDD = +20V VSS = -20V 50 TA = 25C VDD = +15V VSS = -15V 40 SOURCE/DRAIN ON 30 DRAIN OFF 20 10 0 20 40 60 80 100 120 TEMPERATURE (C) 11475-024 -20 0 -20 Figure 22. tTRANSITION Times vs. Temperature CAPACITANCE (pF) 30 25 SOURCE/DRAIN ON 20 DRAIN OFF 10 5 SOURCE OFF -15 -10 -5 0 VS (V) 5 10 15 20 11475-025 0 -20 -5 0 5 10 15 20 Figure 24. ADG5208-EP Capacitance vs. Source Voltage, 15 V Dual Supply TA = 25C VDD = +15V VSS = -15V 15 -10 VS (V) 40 35 -15 11475-040 SOURCE OFF 0 -40 Figure 23. ADG5209-EP Capacitance vs. Source Voltage, 15 V Dual Supply Rev. C | Page 15 of 20 ADG5208-EP/ADG5209-EP Enhanced Product TEST CIRCUITS D IS (OFF) A VD NC = NO CONNECT ID (OFF) Sx A 11475-027 Sx D A VS 11475-031 ID (ON) NC VD Figure 25. On Leakage Figure 28. Off Leakage VSS VDD 0.1F 0.1F VDD NETWORK ANALYZER VSS 50 Sx 50 IDS VS D RL 50 V1 GND VS RON = V1/IDS OFF ISOLATION = 20 log VSS VDD 0.1F VSS 0.1F 0.1F VDD S1 VDD RL 50 D S2 VS VOUT VS VSS 50 Sx RL 50 VS D GND CHANNEL-TO-CHANNEL CROSSTALK = 20 log NETWORK ANALYZER VSS RL 50 GND 11475-029 VOUT INSERTION LOSS = 20 log VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 30. Bandwidth Figure 27. Channel-to-Channel Crosstalk Rev. C | Page 16 of 20 VOUT 11475-033 0.1F NETWORK ANALYZER VOUT VS Figure 29. Off Isolation Figure 26. On Resistance VDD 11475-030 D 11475-028 Sx VOUT Enhanced Product ADG5208-EP/ADG5209-EP 3V ADDRESS DRIVE (VIN) 50% 50% tr < 20ns tf < 20ns VDD VSS VDD VSS A0 0V VIN S1 A1 50 A2 tTRANSITION tTRANSITION S8 90% ADG5208-EP* 2.0V OUTPUT VS1 S2 TO S7 VS8 OUTPUT D EN GND 300 35pF 11475-034 90% *SIMILAR CONNECTION FOR ADG5209-EP. Figure 31. Address to Output Switching Times, tTRANSITION 3V ADDRESS DRIVE (VIN) VDD VSS VDD VSS A0 VIN 0V S1 A1 50 A2 VS S2 TO S7 S8 80% ADG5208-EP* 80% OUTPUT 2.0V OUTPUT D EN GND 300 35pF 11475-035 tD *SIMILAR CONNECTION FOR ADG5209-EP. Figure 32. Break-Before-Make Time Delay, tD 3V 50% VSS VDD VSS A0 50% S1 A1 0V A2 tON (EN) S2 TO S8 ADG5208-EP* tOFF (EN) 0.9VOUT VIN 50 OUTPUT D EN OUTPUT VS GND 300 35pF 0.1VOUT *SIMILAR CONNECTION FOR ADG5209-EP. Figure 33. Enable Delay, tON (EN), tOFF (EN) Rev. C | Page 17 of 20 11475-036 ENABLE DRIVE (VIN) VDD ADG5208-EP/ADG5209-EP Enhanced Product 3V VDD VSS VDD VSS A0 A1 VIN A2 ADG5208-EP* RS VOUT Sx D EN QINJ = CL x VOUT GND VS VOUT CL 1nF VIN *SIMILAR CONNECTION FOR ADG5209-EP. Figure 34. Charge Injection Rev. C | Page 18 of 20 11475-037 VOUT Enhanced Product ADG5208-EP/ADG5209-EP OUTLINE DIMENSIONS 5.10 5.00 4.90 16 9 4.50 4.40 4.30 6.40 BSC 1 8 PIN 1 1.20 MAX 0.15 0.05 0.20 0.09 0.30 0.19 0.65 BSC COPLANARITY 0.10 SEATING PLANE 8 0 0.75 0.60 0.45 COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 35. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters ORDERING GUIDE1 Model ADG5208SRU-EP-RL7 ADG5209SRU-EP-RL7 ADG5208SRUZ-EP-RL7 ADG5209SRUZ-EP-RL7 1 Temperature Range -55C to +125C -55C to +125C -55C to +125C -55C to +125C Package Description 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] Z = RoHS Compliant Part. Rev. C | Page 19 of 20 Package Option RU-16 RU-16 RU-16 RU-16 ADG5208-EP/ADG5209-EP Enhanced Product NOTES (c)2013-2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D11475-0-11/17(C) Rev. C | Page 20 of 20