BSR33,115 - NXP - Datasheet.Directory

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 26 2004 Dec 13

DISCRETE SEMICONDUCTORS

BSR30; BSR31; BSR33

PNP medium power transistors

ook, halfpage

M3D109

2004 Dec 13 2

NXP Semiconductors Product data sheet

PNP medium power transistors BSR30; BSR31; BSR33

FEATURES

•High current (max. 1 A)

•Low voltage (max. 80 V).

APPLICATIONS

•Telephony and general industrial applications

•Thick and thin-film circuits.

DESCRIPTION

PNP medium power transistor in a SOT89 plastic package.

NPN complements: BSR40; BSR41 and BSR43.

PINNING

PIN DESCRIPTION

1emitter

2collector

3base

321

sym07

Fig.1 Simplified outline (SOT89 ) and symbo l .

MARKING

TYPE NUMBER MARKING CODE

BSR30 BR1

BSR31 BR2

BSR33 BR4

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BSR30 SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

BSR31

BSR33

2004 Dec 13 3

NXP Semiconductors Pr oduct data sheet

PNP medium power transistors BSR30; BSR31; BSR33

LIMITING VALUES

In accordance with th e Absolute Ma ximum Ratin g System (IEC 60134).

Note

1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for c ollec t or 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for c ollec t or 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BSR30; BSR31 − −70 V

BSR33 − −90 V

VCEO collector-emitter voltage open base

BSR30; BSR31 − −60 V

BSR33 − −80 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −1 A

ICM peak collector current − −2 A

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.35 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 93 K/W

Rth(j-s) thermal resistance from junction to soldering point 13 K/W

2004 Dec 13 4

NXP Semiconductors Pr oduct data sheet

PNP medium power transistors BSR30; BSR31; BSR33

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp = 300 μs; δ < 0.01.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current IE = 0 A; VCB = −60 V − −100 nA

IE = 0 A; VCB = −60 V; Tj = 150 °C− −50 μA

IEBO emitter-base cu t-off current IC = 0 A; VEB = −5 V − −100 nA

hFE DC current gain IC = −100 μA; VCE = −5 V; note 1

BSR30 10 −

BSR31; BSR33 30 −

DC current gain IC = −100 mA; VCE = −5 V; note 1

BSR30 40 120

BSR31; BSR33 100 300

DC current gain IC = −500 mA; VCE = −5 V; note 1

BSR30 30 −

BSR31; BSR33 50 −

VCEsat collector-emitter saturation

voltage IC = −150 mA; IB = −15 mA; note 1 − −0.25 V

IC = −500 mA; IB = −50 mA; note 1 − −0.5 V

VBEsat base-emitt er saturation voltage IC = −150 mA; IB = −15 mA; note 1 − −1 V

IC = −500 mA; IB = −50 mA; note 1 − −1.2 V

fTtransition freque ncy IC = −50 mA; VCE = −10 V;

f = 100 MHz 100 −MHz

2004 Dec 13 5

NXP Semiconductors Pr oduct data sheet

PNP medium power transistors BSR30; BSR31; BSR33

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Dec 13 6

NXP Semiconductors Pr oduct data sheet

PNP medium power transistors BSR30; BSR31; BSR33

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or completing a design.

2. The product s tatus of device(s) described in this document may ha ve changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reas onably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other co nditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp7 Dat e of release: 2004 Dec 13 Document orde r number: 9397 750 13873