NPN LOW LEVEL Continued Max Vceisat) Hre Min fy Max at at at Prot Type Vce | Vceo le at Tamb |Package|Comple- le | Ig) [Min.|Max.] Ic le | =25C ment Vv Vv mA} V | mA}|mA mA |MHz| mA | mW 2N3053 | 60 40 700/1.4 | 150 | 15 | 50} 250 | 150} 100 | 50 | 1000 |) TO-39 |) 2N4037 2N696 60 40 500|1.5 | 150] 15 |} 20} 60] 150) 80] 50 600 | TO-39 | 2N1131 2N697 60 40 500}1.5 | 150 | 15 | 40] 120 | 150) 100} 50 600 | TO-39 | 2N1132 BFY51 60 30 |1000/0.35| 150 | 15 | 40] | 150] 50] 50 800 | TO-39 - BC107 50 45 200]0.2 | 10 }0.5 | 120) 460 2| 150] 10 300 | TO-18 | BC177 BCY59 | 45 45 2000.35} 10 |0.25] 120) 630 2| 125 | 10 | 1000* | TO-18 | BCY79 2N929 45 45 30] 1 10 |0.5 | 40] 120]0.01) | | 300 | To-18 _ 2N930 45 45 30; 1 10 |0.5 | 100} 300/0.01) | 300 | TO-18 2781 45 35 500/0.2 | 10] 2 38 | 162} 10] 200] 10 300 | TO-18 | ZT181 ZT82 45 35 500/0.2 | 10] 2 75} 250} 10) 200; 10 300 | TO-18 | ZT182 BFX86 | 40 35 |1000/0.35} 150} 15 | 70| | 150) 50] 50 800 { TO-39 BCY42 |; 40 25 200/0.25; 10] 1 40! 90 1} 100 300 | TO-18 - BCY43 | 40 20 200/0.25) 10; 1 75 | 150 1; 100] 1 300 | TO-18 BFY52 | 40 20 |100010.35} 150} 15 | 60) | 150) 50) 50 800 | TO-39 _ BCY58 |. 32 32 200 0.35 10 }0.25 | 120 | 630 2} 125 | 10 | 1000* | TO-18 | BCY78 BC108 30 20 200 | 0.2 10 10.5 | 120 | 800 2| 150 | 10 300 | TO-18 | BC178 ZT80 25 25 500} 0.2 10} 2 38 | 162} 10) 200; 10 300 | TO-18 | ZT180 Z187 25 25 500{0.2 | 10] 2 75 | 250} 10) 200] 10 300 | TO-18 | 27187 2N706A | 25 20 {0.6 10} 1 20/ 60; 10) 200; 10 300 | TO-18 - 2N706 25 20 {0.6}; 10] 1 20] 10 | 200 | 10 300 | TO-18 - BSY9S5A| 20 15 200/0.35} 10 |0.2 | 50} 200] 10) 200; 10 300 | TO-18 = *At tease = 45C TO-18 TO-39 MC3PNP LOW LEVEL TABLE 2 PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vceg), decreasing Collector Currents (Ic), Power Dissipation (Po), etc. Max Vceisat) hee Min f+ Max at at at Prot Type Vcp| Veeco | Ic at Tamb |Package/ Comple- le | Ig |Min.|Max. | Ic Ie | =25C ment Vv Vv mA} V {mA }]mA mA; MHz}mA | mW 27211 90 65 | 1000)0.65/ 150) 15} 40] 120 |150| 60 | 50 | 1000 | TO-39 |ZT90/95 2N4036 | 90 65 | 1000/0.65! 150! 15| 40| 140 (150| | | 1000 | TO-39 |2N2102 27189 70 70 500] 0.2 50! 5| 75] 250 |] 10;150 | 10 | 300 | TO-18 |ZT89 BC161 60 60 | 1000/1.0 |1000} 100} 40} 250 /100| 50 | 50 | 3700* | TO-39 |BC141 BCY77 | 60 60 100)0.25] 10/0.25) 120) 460 2; 180T | 10 } 1000* | TO-18 |BCY65E 2N2605 | 60 45 30) 0.5 10}0.5 | 150} |0.5) 30 |0.5 400 TO-46 - 2N2604 | 60 45 300.5 10|0.5 | 60] |0.5/ 30 |0.5] 400 | TO-46 - ZT210 60 40 | 1000|1.4 | 150] 15 ; 20] 100 |150; 6O | 50 | 1000 | TO-39 |ZT94 2N4037 | 60 40 | 1000/1.4 | 150] 15 | 50| 250/150) | | 1000 | TO-39 |2N3053 BC177 | 50 45 200} 0.2 10|0.5 | 120] 460 2/130 | 10 | 300 ; TO-18 |BC107 BCY70 | 50 40 200/0.25| 10| 1 | 100} 10; 250 | 10 | 350 | TO-18 _ 2N1131 | 50 35 600]1.5 | 150} 15] 20) 45/150) | 600 | TO-39 |2N696 2N1132 | 50 35 600/1.5 | 150; 15) 30} 90/150) | 600 | TO-39 |2N697 27183 45 45 500] 0.4 50! 5] 38; 85 {| 10:150 | 10 | 300 | TO-18 /ZT83 21184 45 45 500] 0.4 50; 5} 75) 170 { 10/150 | 10 | 300 | TO-18 \ZT84 BCY79 | 45 45 200/0.25} 10/0.25; 120} 460 2| 1807 | 10 | 1000* | TO-18 | BCY59 BCY71 | 45 45 200}0.25; 10) 14) 100) 400 | 10) 250 | 10 | 350 | TO-18 _ 27181 45 35 500) 0.2 10| 1) 38] 162] 10/150 |} 10 | 300 |; TO-18 |ZT81 ZT182 45 35 500) 0.2 10; 1) 75| 260 | 10] 150 | 10 300 | TO-18 |ZT8&2 BC160 | 40 40 j 1000}1.0 |1000]} 100] 40) 250 | 100) 50 | 50 | 3700* | TO-39 |BC140 BCY78 | 32 32 200/0.25| 100.25) 120; 630 2] 180f | 10 | 1000* | TO-18 | BCY58 BCY72 | 30 25 | 200)0.25} 10! 1) 100) 10; 250 | 10 | 350 | TO-18 _ BC178 30 25 200} 0.2 10|}0.5 | 120; 800 2} 130 | 10 300 TO-18 |BC108 ZT180 25 25 500) 0.2 10 1]. 38] 162 | 10} 150 | 10 300 TO-18 |ZT80 27187 25 25 500] 0.2 10} 1] 75] 250] 10/150 | 10 300 | TO-18 |ZT87 27152 20 20 500} 0.2 10} 14 50) 200] 10) | 300 | TO-18 _ *At Tease = 45C [Typical MC4PLANAR SWITCHING PLANAR SWITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with * which signifies PNP. Package lc yo-39 | to-39 | to-39 | to-39 | 10-39 | To-39 Vceo 1A 2A 3A 5A 7.58 10A Volts 40 2N4037" BSV60 2N3418 | BUX34 BSV64 BUY81 60 2N4036* 23420 | BUY8O BUY82 BFX34 BUY92" Buygo* | BuY91* 80 2N4000 2N3419 2N3421 100 2N4001 TO-39 PgSWITCHING TABLE 6NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. The devices are fisted in order of decreasing Collector Current, Breakdown Voltage, Power Dissipation, etc. Max Vceisat} hee Switching Times Prot Ic at at at at Type (Max) | Vceo Tease | Package Ic le ; Ic Ton tort Ic =25C A v Vv A A j[min.}max.| A ns | ns A WwW BUY82 10 60 1 10 | 0.75] 15 - 10 | 320 | 245} 10 30 TO-39 BUY81 7.5 60 1 7.5/0.5 ] 10 - | 7.5 | 160} 430] 5 24 TO-39 BUY80 5 60 1 5 | 0.5] 15 - 5 | 170] 200/ 5 20 TO-39 BUX34 5 60 1 5 | 0.5] 40 | 150} 2 | 140; 180) 5 20 TO-39 BSV60 5 40 0.9 | 2 | 0.2 | 40 | 120} 2 | 500 ;1000; 1 6.2 | TO-39 2N3419 3 80 0.5 | 2 | 0.2 | 20 | 60 1 300 |1200} 1 30 TO-39 2N3420 3 80 0.5} 2 | 0.2] 40 | 120) 1 300 | 1200] 1 30 TO-39 2N3418 3 60 0.5 | 2 {0.2 ] 20 | 60 1 300 | 1200} 1 30 TO-39 2N3421 3 60 0.5 {| 2 | 0.2 | 40 | 120] 1 300 |} 1200} 1 30 TO-39 BFX34 2 60 1 5 | 05] 40 | 150] 2 140 | 180 | 5 5 TO-39 BSV64 2 60 1 5 | 0.5 | 40 - 2 140 | 180 | 5 5 TO-39 2N4001 1 100 | 0.5 1 0.1 | 40 | 120 | 0.5 |-300 | 2000] 0.5 20 TO-39 2N4000 1 80 0.5 1 0.1 | 30 | 120 | 0.5 | 300 [2000] 0.5 20 TO-39 TABLE 7 PNP SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. The devices are listed in order of decreasing Collector Current, Breakdown Voltage, Power Dissipation, etc. Max Vceisat) hee Switching Times Prot le at at f at at Type (Max) | Vceo Tease Package Ic iF le ton lott Ic = 25C A Vv Vv A A | min. }max.| A ns | ns A w BUY92 7.5 60 1 7.5} 0.75] 40 - 1 - - _ 30 TO-39 BUY91 5 60 1 5 | 0.5 |) 40 - 1 _ - - 25 TG-39 BUY90 3 60 1 3 | 0.3 | 40 _ 1 _ _ _ 20 TO-39 2N4036 1 65 | 0.65]0.1510.015| 40 | 140 [0.15] 110 | 700 | 0.15 1* TO-39 2N4037 1 40 1.4 |0.15/0.015} 50 | 250 ]0.15] - - 1* | TP-39 *at Tamb = 25C P10