VS-SD553C..S50L Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 560 A FEATURES * High power fast recovery diode series * 6.0 s recovery time * High voltage ratings up to 4500 V * High current capability * Optimized turn-on and turn-off characteristics * Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC(R) B-PUK (DO-200AB) B-PUK (DO-200AB) * Maximum junction temperature 125 C * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS IF(AV) 560 A Package B-PUK (DO-200AB) Circuit configuration Single * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2t VRRM trr TEST CONDITIONS Ths Ths VALUES UNITS 560 A 55 C 1120 A 25 C 50 Hz 12 000 60 Hz 12 570 A 50 Hz 721 60 Hz 658 Range 3000 to 4500 V 5.0 s TJ 125 -40 to +125 TJ kA2s C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD553C..S50L VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 IRRM MAXIMUM AT TJ = 125 C mA 75 Revision: 11-Jan-18 Document Number: 93177 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD553C..S50L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current Maximum I2t for fusing IF(AV) IF(RMS) IFSM I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop TEST CONDITIONS VALUES 560 (210) 55 (85) 1120 12 000 12 570 10 100 10 570 721 658 510 466 7210 1.77 1.95 180 conduction, half sine wave Double side (single side) cooled I2t VF(TO)1 VF(TO)2 25 C heatsink temperature double side cooled t = 10 ms No voltage reapplied t = 8.3 ms t = 10 ms 50 % VRRM reapplied t = 8.3 ms Sinusoidal half wave, t = 10 ms No voltage initial TJ = TJ maximum reapplied t = 8.3 ms t = 10 ms 50 % VRRM reapplied t = 8.3 ms t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.98 rf2 (I > x IF(AV)), TJ = TJ maximum 0.89 Ipk = 1500 A, TJ =125 C, tp = 10 ms sinusoidal wave 3.24 UNITS A C A kA2s kA2s V mW VFM V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) S50 5.0 TYPICAL VALUES AT TJ = 125 C TEST CONDITIONS IFM Ipk SQUARE PULSE (A) dI/dt (A/s) 1000 100 Vr (V) trr AT 25 % IRRM (s) Qrr (C) Irr (A) trr t dir dt -50 6.0 900 250 Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TEST CONDITIONS TJ DC operation single side cooled DC operation double side cooled Mounting force, 10 % Approximate weight Case style UNITS -40 to 125 TStg RthJ-hs VALUES Conforms to JEDEC(R) C -40 to 150 0.073 K/W 0.031 14 700 N (1500) (kg) 255 g B-PUK (DO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE 0.009 0.009 0.011 0.011 0.014 0.014 0.020 0.020 0.036 0.036 RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 0.006 0.006 0.011 0.011 0.015 0.015 0.021 0.021 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93177 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD553C..S50L Series www.vishay.com 130 S D 5 5 3 C ..S5 0 L S e rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 7 3 K / W 120 110 100 90 Co nd uc tio n A ng le 80 70 60 50 30 60 90 1 2 0 40 1 8 0 30 0 1 00 200 300 4 00 Maximum Allowable Heatsink Tem perature (C) M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e ( C ) 130 Vishay Semiconductors SD 553C..S50L Series (Double Side Cooled) R thJ-h s (DC) = 0.031 K/W 120 110 100 90 80 C o nd uc tio n Pe rio d 70 30 60 50 90 120 40 30 180 DC 20 10 0 200 Fig. 1 - Current Ratings Characteristics 800 1000 1200 2500 SD 5 5 3 C ..S 5 0 L S e rie s (Sin g le S id e C o o le d ) R thJ-hs ( D C ) = 0 .0 7 3 K/ W 120 110 M aximum Average Forw ard Power Loss (W ) M a x im u m A llo w a b le H e a t sin k T e m p e ra tu r e (C ) 600 Fig. 4 - Current Ratings Characteristics 130 100 90 80 C o nd uc tio n Pe riod 70 60 50 3 0 6 0 40 90 120 30 20 180 DC 10 0 1 00 20 0 300 400 5 00 2250 180 120 90 60 30 2000 1750 1500 1000 750 Co n duc tio n An g le 500 SD553C..S50L Series TJ = 125C 250 0 0 6 00 13 0 S D 5 5 3 C ..S 5 0 L Se rie s (D o u b le Sid e C o o le d ) R t hJ-hs (D C ) = 0 .0 3 1 K / W 12 0 11 0 10 0 90 C o nd uc tio n Ang le 80 70 60 30 50 6 0 90 1 2 0 40 1 8 0 30 20 0 1 00 2 00 30 0 40 0 50 0 60 0 7 0 0 80 0 A v e ra g e Fo rw a r d C u rre n t ( A ) Fig. 3 - Current Ratings Characteristics 100 200 300 400 500 600 700 800 Averag e Forw ard Current (A) Fig. 5 - Forward Power Loss Characteristics 3500 Maxim um Average Forw ard Power Loss ( W) Fig. 2 - Current Ratings Characteristics RMS Lim it 1250 A v e ra g e F o rw a r d C u rre n t (A ) C ) 400 Average Forw ard Curren t (A) A v e ra g e F o r w a rd C u rr e n t (A ) M a x im um A llo w a b le H e a tsin k T e m pe r a tu re ( 60 DC 180 120 90 60 30 3000 2500 2000 RM S Lim it 1500 C o nd uc tio n Pe rio d 1000 SD553C..S50L Series TJ = 125C 500 0 0 200 400 600 800 1000 1200 Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93177 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD553C..S50L Series www.vishay.com Vishay Semiconductors 10000 A t A n y R a te d Lo a d C o n d it io n A n d W it h 1 1 0 0 0 5 0 % R a t e d V R RM A p p lie d Fo llo w in g S u rg e In it ia l T J = 1 2 5 C 10 0 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 9000 In stan taneous Forward Current (A) Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t (A ) 12 0 0 0 8000 7000 6000 5000 S D 5 5 3 C ..S5 0 L S e rie s 4000 3000 1 10 TJ = 25C TJ = 125C 1000 SD553C..S50L Series 100 1.5 100 N um be r O f E qua l A m p litude Ha lf Cy c le C urre n t Pulse s (N ) (K / W ) 80 0 0 60 0 0 40 0 0 S D 5 5 3 C ..S 5 0 L S e rie s 20 0 0 0 .0 1 0 .1 3.5 4 4.5 5 SD 5 5 3 C ..S5 0 L S e rie s thJ-hs 1 00 0 0 3 0 .1 M ax im u m N o n R e pe t it iv e Su rge C u rre nt V e rsu s P ulse T ra in D u rat io n . In itial TJ = 1 2 5C N o V o lta g e Re ap plie d 5 0 % R at e d VR RM R e ap p lie d T ra n sie n t T h e rm a l Im p e d an c e Z P e a k H a lf Sin e W a v e F o rw a rd C urre n t (A ) 1 20 0 0 2. 5 Fig. 9 - Forward Voltage Drop Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1 40 0 0 2 In stan tan eous Forward V oltage (V ) 1 0 .0 1 St e a d y S ta t e V a lu e R t hJ-hs = 0 .0 7 3 K / W ( Sin g le S id e C o o le d ) R thJ- hs = 0 .0 3 1 K / W ( D o ub le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 0. 00 1 P u lse T ra in D u ra tio n (s) 0 .0 1 0 .1 1 10 10 0 Sq u a re W a v e P u lse D u ra t io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 4 00 V 3 50 FP I T = 1 2 5C J F o rw a rd R e c o v e ry ( V ) 3 00 2 50 2 00 T = 2 5C 1 50 J 1 00 50 SD 5 5 3 C ..S 5 0 L S e rie s 0 0 20 0 40 0 600 8 00 1 0 00 12 00 1 4 00 1 60 0 18 0 0 20 00 R at e O f R ise O f Fo rw a rd C u rre n t - d i/d t ( A / us) Fig. 11 - Typical Forward Recovery Characteristics Revision: 11-Jan-18 Document Number: 93177 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD553C..S50L Series Vishay Semiconductors 1E4 1 0 .5 10 9. 5 9 8. 5 8 7. 5 7 6. 5 6 5. 5 5 4. 5 4 SD 5 5 3 C ..S5 0 L Se rie s TJ = 1 2 5 C ; V r > 1 0 0 V 1 0 jo ule s pe r pulse Peak Forw ard Current (A) M a xim u m R e v e rse R e c o v e ry T im e - T rr ( s) www.vishay.com I FM = 15 00 A Sin e Pu lse 100 0 A 50 0 A 6 4 2 1 0 .8 0 .6 1E3 0. 4 0 .2 tp 10 1 00 1E2 1E1 10 0 0 1E2 Fig. 12 - Recovery Time Characteristics 1E 4 Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics 1E 4 25 0 0 I F M = 15 00 A Sine Pulse 20 0 0 1 00 0 A 500 A 15 0 0 10 0 0 Peak Forward Current (A) M a x im u m Re v e rse R e c o v e ry C h a rg e - Q rr ( C ) 1E 3 Pulse Basewidth (s) Rate O f Fa ll O f Forw ard Current - d i/dt ( A/s) 1000 1 50 0 6 00 4 0 0 2 0 0 1 00 50 Hz 2000 1E 3 3000 S D 55 3 C..S5 0 L Se rie s Si nu so id al Pu ls e TC = 5 5C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s 4 00 0 6000 50 0 tp 10 0 0 0 SD 5 5 3 C ..S5 0 L S e rie s TJ = 1 2 5 C ; V r > 1 0 0 V 1E 2 1E1 0 0 50 10 0 1 50 2 00 2 50 3 00 1E 2 1E3 Fig. 16 - Frequency Characteristics Fig. 13 - Recovery Charge Characteristics 1E4 8 00 SD 5 5 3 C.. S5 0 L Se rie s Sin uso id al Pu ls e TJ = 1 25C , V RRM = 15 0 0 V d v/ d t = 1 0 0 0 V/ s I FM = 1 5 00 A Sin e Pulse 7 00 tp 50 0 A 5 00 4 00 3 00 2 00 Peak Forw ard Current (A) 1 00 0 A 6 00 10 jo ules pe r p ulse 8 6 4 1E3 2 1 0.8 SD 5 5 3 C ..S5 0 L S e r ie s TJ = 1 2 5 C ; V r > 1 0 0 V 1 00 0 0 50 1 00 1 50 2 00 2 5 0 3 0 0 R ate O f Fall O f Fo rwa rd Current - di/dt (A /s) Fig. 14 - Recovery Current Characteristics 1E 4 Pulse Basew idth (s) Rate O f Fall O f Fo rward C urre nt - di/dt ( A/s) M ax im u m R e v e rse R e c o v e ry C u rr e n t - Ir r (A ) SD 5 5 3 C ..S5 0 L S eri es Si nu so id al Pu lse TJ = 1 25 C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ s 0 .6 0.4 1E2 1E1 1E 2 1E 3 1E 4 Pulse Basewidth (s) Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Revision: 11-Jan-18 Document Number: 93177 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD553C..S50L Series www.vishay.com Vishay Semiconductors 1E 4 tp 200 Peak Forward Curren t (A) Peak Forward Current (A) 1E4 50 H z 1 00 400 600 1E3 10 0 0 1 50 0 2 0 00 3000 40 0 0 6 00 0 1E2 1E 1 1E 2 SD 55 3C ..S5 0 L S er ie s Trap e zo idal Pul se TC = 5 5C, V RRM = 1 5 0 0 V dv / dt = 10 0 0 V/u s, di/ d t = 3 0 0 A / us 1E 3 SD 5 5 3 C..S5 0 L Se rie s Tra pez o idal Pul se TJ = 1 2 5C , V RRM = 1 5 0 0 V dv / d t = 1 00 0V / s di /d t = 1 0 0 A / s tp 10 jo u le s pe r pulse 6 8 4 1E 3 2 1 0 .8 0.6 0 .4 1E 2 1E1 1E4 1E2 Pu lse Basew idth (s) 1E3 1E4 Pulse Basew idth (s) Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 Peak Forward Curren t (A) tp 50 H z 1E3 15 0 0 60 0 1000 4 00 20 0 10 0 2 00 0 SD 5 5 3 C ..S 50 L Se ri e s Tra pe zo ida l Pu lse TC = 5 5 C, V RRM = 1 5 00 V d v /d t = 1 0 0 0 V /u s, d i/ dt = 1 0 0 A /u s 3 00 0 4000 6000 1E2 1E1 1E2 1E3 1E4 Pulse Basew idth (s) Fig. 20 - Frequency Characteristics ORDERING INFORMATION TABLE Device code VS- SD 55 3 C 45 S50 L 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code 8 - L = PUK case B-PUK (DO-200AB) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95246 Revision: 11-Jan-18 Document Number: 93177 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-PUK (DO-200AB) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) C A 53 (2.09) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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