1C3D1P7060Q Rev. E
C3D1P7060Q
Silicon Carbide Schottky Diode
Z-Rec®
Features
Benets
Applications
Package
Maximum Ratings (T
Symbol Parameter Value Unit Test Conditions Note
V 600 V
V 600 V
V 600 V
T
T
T
T
T
15
12 Tp
Tp
50
40
T
T
tot
T
T
TJ -55 to
+160
Part Number Package Marking
VRRM = 600 V
IF (TC=135˚C)
Qc
2C3D1P7060Q Rev. E
40
60
80
100
Reverse Leakage Current, I
RR
(uA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
20
0 100 200 300 400 500 600 700 800 900 1000 1100
Reverse Leakage Current, I
Reverse Voltage, VR(V)
T
J
= -55 °C
T
J
= 25
°
C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
V
R
6
15
55 VR = 600 V T
VR = 600 V T
4
VR
di/dt
T
6
VR
VR
VR
E VR = 400 V
Thermal Characteristics
Symbol Parameter Typ. Unit Note
Rθ
Typical Performance
6
8
10
12
14
Foward Current, I
F
(A)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 150 °C
TJ= 125 °C
0
2
4
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Foward Current, I
Foward Voltage, V
F
(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D1P7060Q Rev. E
6
8
10
12
14
16
18
I
F
(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
2
4
6
25 40 55 70 85 100 115 130 145 160
TC(°C)
15
20
25
30
35
40
P
TOT
(W)
0
5
10
25 50 75 100 125 150 175
TC(°C)
Typical Performance
2
3
4
5
6
Capacitive Charge, Q
C
(nC)
Conditions:
TJ= 25 °C
0
1
2
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
30
40
50
60
70
80
90
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
10
20
30
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D1P7060Q Rev. E
0.8
1.2
1.6
2
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
0.4
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance
10
100
I
FSM
(A)
TJ= 25 °C
TJ= 110 °C
1
10E-6 100E-6 1E-3 10E-3
Time, tp(s)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
100E
-
3
1
Thermal Resistance (oC/W)
0.5
0.3
0.1
0.05
0.02
SinglePulse
10E-3
100E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, t
p
(s)
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C3D1P7060Q Rev. E
Package Dimensions
6C3D1P7060Q Rev. E
Recommended Landing Pattern (All Dimensions are in mm)
-
Note: Recommended soldering proles can be found in the applications note here:
77 C3D1P7060Q Rev. E
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdebrillatorsorsimilaremergencymedical
equipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
• Schottky diode Spice models: http://response.cree.com/Request_Diode_model
• SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
RelatedLinks
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT T
VT J
RT J
