SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC DDTD (xxxx) C NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features * * * * Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTB) Available in Lead Free/RoHS Compliant Version (Note 2) TOP VIEW IN 2 Mechanical Data * * SOT-23 3 OUT Built-In Biasing Resistors, R1, R2 B C 1 GND D E G H Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 * * * * Moisture Sensitivity: Level 1 per J-STD-020C * Marking: Date Code and Marking Code (See Table Below & Page 3) K J M L Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 4, on Page 3 * * (2) IN Ordering Information (See Page 3) R1 1K 2.2K 4.7K 10K 0.22K 1K 2.2K 3.3K 2.2K 4.7K 10K 0 Maximum Ratings 1K 2.2K 4.7K 10K 4.7K 10K 10K 10K OPEN OPEN OPEN 10K 0.51 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.89 1.00 L 0.45 0.61 M 0.085 0.110 a 0 8 All Dimensions in mm Symbol Value Unit VCC 50 V DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC VIN -10 to +10 -10 to +12 -10 to +30 -10 to +40 -5 to +5 -5 to +10 -5 to +12 -6 to +20 V DDTD123TC DDTD143TC DDTD114TC DDTD114GC VEBO (MAX) 5 V Output Current Power Dissipation Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 0.37 B @ TA = 25C unless otherwise specified Characteristic Input Voltage, (1) to (2) A N60 N61 N62 N63 N64 N65 N66 N67 N69 N70 N71 N72 Supply Voltage, (3) to (1) Input Voltage, (2) to (1) Max GND (1) R1 (NOM) R2 (NOM) MARKING DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC Min R2 Weight: 0.008 grams (approximate) P/N OUT (3) Dim All IC 500 mA Pd 200 mW RqJA 625 C/W Tj, TSTG -55 to +150 C 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30384 Rev. 3 - 2 1 of 3 www.diodes.com DDTD (xxxx) C a Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC Input Voltage DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC Output Voltage DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC Input Current Output Current DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DC Current Gain R1, R2 Types @ TA = 25C unless otherwise specified Gain-Bandwidth Product* Symbol Min Typ Max Unit Test Condition Vl(off) 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.3 3/4 3/4 V VCC = 5V, IO = 100mA V VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 10mA VO = 0.3V, IO = 30mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA IO/Il = -50mA/-2.5mA Vl(on) 3/4 3/4 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 VO(on) 3/4 3/4 0.3V V 3/4 3/4 7.2 3.8 1.8 0.88 4.5 7.2 3.6 2.4 mA VI = 5V IO(off) 3/4 3/4 0.5 mA VCC = 50V, VI = 0V Gl 33 39 47 56 47 56 56 56 3/4 3/4 3/4 VO = 5V, IO = 50mA fT 3/4 200 3/4 MHz Il VCE = 10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics R1-Only, R2-Only Types @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 50 3/4 3/4 V IC = 50mA Collector-Emitter Breakdown Voltage BVCEO 40 3/4 3/4 V IC = 1mA BVEBO 5 3/4 3/4 V IE = 50mA IE = 50mA IE = 50mA IE = 720mA ICBO 3/4 3/4 0.5 mA VCB = 50V IEBO 3/4 3/4 3/4 300 3/4 0.5 0.5 0.5 580 mA VEB = 4V Emitter-Base Breakdown Voltage DDTD123TC DDTD143TC DDTD114TC DDTD114GC Collector Cutoff Current Emitter Cutoff Current DDTD123TC DDTD143TC DDTD114TC DDTD114GC Collector-Emitter Saturation Voltage DC Current Transfer Ratio Gain-Bandwidth Product* DDTD123TC DDTD143TC DDTD114TC DDTD114GC Test Condition VCE(sat) 3/4 3/4 0.3 V IC = 50mA, IB = 2.5mA hFE 100 100 100 56 250 250 250 3/4 600 600 600 3/4 3/4 IC = 5mA, VCE = 5V fT 3/4 200 3/4 MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only DS30384 Rev. 3 - 2 2 of 3 www.diodes.com DDTD (xxxx) C NEW PRODUCT Ordering Information (Note 3) Notes: Device Packaging Shipping DDTD113EC-7 SOT-23 3000/Tape & Reel DDTD123EC-7 SOT-23 3000/Tape & Reel DDTD143EC-7 SOT-23 3000/Tape & Reel DDTD114EC-7 SOT-23 3000/Tape & Reel DDTD122JC-7 SOT-23 3000/Tape & Reel DDTD113ZC-7 SOT-23 3000/Tape & Reel DDTD123YC-7 SOT-23 3000/Tape & Reel DDTD133HC-7 SOT-23 3000/Tape & Reel DDTD123TC-7 SOT-23 3000/Tape & Reel DDTD143TC-7 SOT-23 3000/Tape & Reel DDTD114TC-7 SOT-23 3000/Tape & Reel DDTD114GC-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DDTD114GC-7-F. Marking Information YM XXX = Product Type Marking Code, See Table on Page 1 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September XXX Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30384 Rev. 3 - 2 3 of 3 www.diodes.com DDTD (xxxx) C