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c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C
General Purpose Transistor (−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
Features Dimensions (Unit : mm)
1) Excellent hFE linearity.
2) Complements the 2SC2412K / 2SC4081 /
2SC4617 / 2SC5658.
Structure
Epitaxial planar type.
PNP silicon transistor
2SA1037AK
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗Abbreviated symbol : F ∗
∗ Denotes h
FE
Abbreviated symbol : F ∗
ROHM : SMT3
EIAJ : SC-59
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
0.8
0.15
0 to 0.1
0.3 to 0.6
1.1
(2)(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
2SA1774
ROHM : EMT3
EIAJ : SC-75A
(3) Collecto
(1) Emitter
(2) Base
0.7
0.15
0.1Min.
0.55
0 to 0.1
0.2
1.6
1.6
1.0
0.3
0.8
(2)
0.5 0.5
(3)
0.2
(1)
2SA1576A
ROHM : UMT3
EIAJ : SC-70
(3) Collector
(1) Emitter
(2) Base
Each lead has same dimensions
1.25
2.1
0.3
0.15
0 to 0.1
0.1 to 0.4
(3)
0.9
0.7
0.2
0.65
(2)
2.0
1.3
(1)
0.65
2SA2029
ROHM : VMT3
EIAJ :
(1) Base
(2) Emitter
(3) Collector
0 to 0.1
(3)
0.32
0.8
1.2
0.13 0.5
0.22
0.4 0.4
1.2
0.80.2
0.15Max.
0.2
(2)
(1)
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C
Data Sheet
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−60 V
V
V
A (DC)
˚C
˚C
−50
−6
−0.15
W
0.2
0.15
2SA1037AK, 2SA1576A
2SA2029, 2SA1774
150
−
55 to +150
Symbol Limits Unit
Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−60
−50
−6
−
−
120
−
−
−
−
−
−
−
−
−
−
140
4.0
−
−
−
−0.1
−0.1
390
−0.5
−
5.0
VI
C
= −50μA
I
C
= −1mA
I
E
= −50μA
V
CB
= −60V
V
EB
= −6V
V
CE
= −6V, I
C
= −1mA
I
C
/I
B
= −50mA/−5mA
V
CE
= −12V, I
E
=2mA, f=100MHz
V
CB
= −12V, I
E
=0A, f=1MHz
V
V
μA
μA
−
V
MHz
pF
Typ. Max. Unit Conditions
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
QR
hFE
2SA1037AK
T146
3000
−
−
QR2SA1576A
T106
3000
−
−
TL
3000
−
−
−
QR2SA1774 −−
T2L
8000
−
QR2SA2029 −−
Type
hFE values are classified as follows:
Item Q R
hFE 120 to 270 180 to 390
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C
Data Sheet
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
−0.2
COLLECTOR CURRENT : Ic (
mA)
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
V
CE
= −6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=100˚C
25˚C
−40˚C
Fig.2 Grounded emitter output
characteristics (I)
−0.4
−4
−8
−1.20
−2
−6
−10
−0.8 −1.6 −2.0
−3.5μA
−7.0
−10.5
−14.0
−17.5
−21.0
−24.5
−28.0
−31.5
IB=0
Ta=25˚C
−35.0
COLLECTOR CURRENT : IC (
mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.3 Grounded emitter output
characteristics (II)
−40
−80
−5−3−4−2−1
−20
−60
−100
0
IB=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
−50μA
−100
−150
−200
−250
−500
−450
−400
−350
−300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
−0.2 −0.5 −1−2−5−10 −20 −50 −100
DC CURRENT GAIN : h
FE
Ta=25˚CV
CE
= −5V
−3V
−1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
−0.2 −0.5 −1−2−5−10 −20 −50 −100
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (
mA)
VCE= −6V
Ta=100˚C
−40˚C
25˚C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
−0.1
−0.2 −0.5 −1−2−5−10 −20 −50 −100
−1
−0.5
−0.2
−0.05
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
−0.1
−0.2 −0.5 −1−2−5−10 −20 −50 −100
−1
−0.5
−0.2
−0.05
COLLECTOR CURRENT : I
C
(mA)
l
C
/l
B
=10
Ta=100˚C
25˚C
−40˚C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.8 Gain bandwidth product vs.
emitter current
50 1000.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25˚C
V
CE
= −12V
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
−0.5 −20
2
5
10
−1−2−5−10
20
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=
0A
I
C
=
0A
R1120A
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