N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 15A , Rosion)=80MQ @Vas=10V. Rosoonj=85mMQ @Ves=5.0V. e Super high dense cell design for extremely low Rosion). e High power and current handling capability. e TO-220 & TO-263 package. > CEB SERIES TO-263(DD-PAK) 3 CEP SERIES T0-220 ~ CEP4060ALR/CEB4060ALR March 1998 LF] S ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGs +16 V Drain Current-Continuous ID 15 A -Pulsed IDM 45 A Drain-Source Diode Forward Current Is 15 A Maximum Power Dissipation @Tc=25C Pp 30 W Derate above 25C 0.3 wic Operating and Storage Temperature Range | Tu, TSTG -65 to 175 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RouJc 3 C/W Thermal Resistance, Junction-to-Ambient RoJA 62.5 C/W 4-37CEP4060ALR/CEB4060ALR ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit DRAIN-SOURCE AVALANCHE RATING: aaron Eas | Voo=25V, ID=150A 430 mJ mn an ws | a] [A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Ves=0V, ID=250uA 60 V Zero Gate Voltage Drain Current Ipss Vps=60V, Ves = OV 250} A Gate-Body Leakage lass Ves =+16V, Vos=0V +100] nA ON CHARACTERISTICS* Gate Threshold Voltage Vesith) | Vos=Ves, lo= 250uA 1 }15 )2 ] V Drain-Source On-State Resistance Ros(on) Nes=5V, ID=7A 2 | 8 | ml Vas =10V, ID=15A 58 | 80 | mQ On-State Drain Current ID(ON) Vas = 5V, Vos = 10V 15 A Forward Transconductance Ors Vos = 10V, lp=7.5A 11 S SWITCHING CHARACTERISTICS Turn-On Delay Time {D(ON) Vo = 30V, 8 | 20 | ns Rise Time tr Vesa 140 | 250 | ns Turn-Off Delay Time {D(OFF) Reen =51.0 30 | 100 | ns Fall Time t 60 | 150 | ns Total Gate Charge Qg 15 | 17 | nC Gate-Source Charge Qys ie A p= 15A, 3 nc Gate-Drain Charge Qaa 2 nC 4-38CEP4060ALR/CEB4060ALR ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit DYNAMIC CHARACTERISTICS Input Capacitance Ciss 430 | 600 | PF Vos =25V, Vas = 0V Output Capacitance Coss f=1. 0MHz 126 | 200 | PF Reverse Transfer Capacitance Crss 28 | 50 | PF DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Vsp Vas = OV, Is =7.5A 09} 13} V Notes a.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing. | Ves=10,9,8, | 7,6,5,4V Ves=3V | omy [ / Ip, Drain Current(A) 0 05 #10 15 20 Vos, Drain-to-Source Volta 25 3.0 ge (V) Figure 1. Output Characteristics = ao -55T 4 / Y Tj=125C Ip, Drain Current (A) 3 oa 0 1 2 3 Vas, Gate-to-Source Voltage (V) 4 5 6 Figure 2. Transfer Characteristics 4-39CEP4060ALR/CEB4060ALR Vth, Normalized Gate-Source Threshold Voltage C, Capacitance (pF) Ors, Transconductance (S) 600 500 400 300 200 100 10 20 30 40 50 Vos, Drain-to Source Voltage (V) Figure 3. Capacitance 1.3 Vps=Vas 12 Io=-250 2A 11 1.0 0.9 0.8 0.7 0.6 -50 25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation with Temperature 12 10 Vos=10V 10 15 20 Ips, Drain-Source Current (A) Figure 7. Transconductance Variation with Drain Current RbDS(ON), Normalized Drain-Source On-Resistance BVpss, Normalized Drain-Source Breakdown Voltage Is, Source-drain current (A) 4-40 3.0 2.5 2.0 Tj=125C 5 10 15 20 25 Ip, Drain Current (A) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.15 I=250 uA Ae 1.10 1.05 Wo 1.00 0.95 0.90 0.85 $0 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Figure 6. Breakdown Voltage Variation with Temperature 20 10 0.1 0.4 0.6 0.8 1.0 1.2 1.4 Vsp, Body Diode Forward Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Currentr(t),Normalized Effective Transient Thermal Impedance Vas, Gate to Source Voltage (V) Ves @) RGEN G CEP4060ALR/CEB4060ALR TT Vps=48V ID=15A Z [1 0 2 4 6 8 10 12 14 16 Qg, Total Gate Charge (nC) Figure 9. Gate Charge Vbb Ri VIN D Vout Ss Figure 11. Switching Test Circuit - KN o a 0.01 0.01 0.1 1 10 < < g 5 Oo Cc g a s 1 10 60 100 Vos, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area ton> ta(on) } +) tr td(off) F90% VouT 10% INVERTED VIN PULSE WIDTH Figure 12. Switching Waveforms 1. Reva (t)=r (t) * Resa 2. Resa=See Datasheet 3. Tuw-Ta = Pom* Rava (t) 4. Duty Cycle, D=t1/t2 100 1000 10000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-41