NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics. Features: D Low Noise D High DC Current Gain D High Breakdown Voltage D Low Pulse Noise Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Steady State Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 120V, IE = 0 - - 100 nA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 - - 100 nA 120 - - V 350 - 700 Breakdown Voltage Collector-to-Emitter DC Current Gain V(BR)CEO IC = 1mA, IB = 0 hFE VCE = 6V, IC = 2mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Saturation Voltage Collector-to-Emitter VCE(sat) IC = 10mA, IB = 1mA - - 0.3 V Base-to-Emitter Voltage VBE VCE = 6V, IC = 2mA - 0.65 - V fT VCE = 6V, IC = 1mA - 100 - MHz Transition Frequency Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 4 - pF Noise Figure NF VCE = 6V, IC = 100A, f = 10Hz, Rg = 10k - - 6 dB VCE = 6V, IC = 100A, f = 1Hz, Rg = 10k - - 2 VCE = 6V, IC = 100A, f = 1Hz, Rg = 100k - 3 - .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max