NTE234
Silicon PNP Transistor
Low Noise, High Gain Amplifier
Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Features:
DLow Noise
DHigh DC Current Gain
DHigh Breakdown Voltage
DLow Pulse Noise
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Steady State Collector Current, IC100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, IE100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 120V, IE = 0 – – 100 nA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 nA
Breakdown Voltage
Collector–to–Emitter V(BR)CEO IC = 1mA, IB = 0 120 – – V
DC Current Gain hFE VCE = 6V, IC = 2mA 350 – 700
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Saturation Voltage
Collector–to–Emitter VCE(sat) IC = 10mA, IB = 1mA – – 0.3 V
Base–to–Emitter Voltage VBE VCE = 6V, IC = 2mA –0.65 –V
Transition Frequency fTVCE = 6V, IC = 1mA –100 –MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz –4–pF
Noise Figure NF VCE = 6V, IC = 100µA,
f = 10Hz, Rg = 10kΩ– – 6 dB
VCE = 6V, IC = 100µA,
f = 1Hz, Rg = 10kΩ– – 2
VCE = 6V, IC = 100µA,
f = 1Hz, Rg = 100kΩ–3–
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
