ON Semiconductor 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 250 WATTS * High Collector Emitter Sustaining -- VCEO(sus) = 100 Vdc (Min) -- 2N6274 = 120 Vdc (Min) -- 2N6275 = 150 Vdc (Min) -- 2N6277 * High DC Current Gain -- hFE = 30-120 @ IC = 20 Adc = 10 (Min) @ IC = 50 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc * Fast Switching Times @ IC 20 Adc CASE 197A-05 TO-204AE (TO-3) tr = 0.35 ms (Max) ts = 0.8 ms (Max) tf = 0.25 ms (Max) * Complement to 2N6377-79 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III III IIII III IIIIIIIIIII IIII III III IIII III IIIIIIIIIII IIII IIIIIIII III III III IIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS(1) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Symbol 2N6274 2N6275 2N6277 Unit VCB 120 140 180 Vdc VCEO 100 120 150 Vdc VEB 6.0 Vdc IC 50 100 Adc Base Current IB 20 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C TJ, Tstg -65 to +200 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTIC Characteristic Thermal Resistance, Junction to Case Symbol Max Unit JC 0.7 C/W (1) Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 9 1 Publication Order Number: 2N6274/D 2N6274 2N6275 2N6277 PD, POWER DISSIPATION (WATTS) 250 200 150 100 50 0 0 25 75 50 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 175 200 2N6274 2N6275 2N6277 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 100 120 150 -- -- -- -- -- -- 50 50 50 -- -- 10 1.0 Adc mAdc -- 100 Adc 50 30 10 -- 120 -- -- -- 1.0 3.0 -- -- 1.8 3.5 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (2) IC = 50 mAdc, IB = 0) VCEO(sus) 2N6274 2N6275 2N6277 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) Vdc Adc ICEO 2N6274 2N6275 2N6277 Collector Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150C) ICEX Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS (2) DC Current Gain IC = 1.0 Adc, VCE = 4.0 Vdc) IC = 20 Adc, VCE = 4.0 Vdc) IC = 50 Adc, VCE = 4.0 Vdc) hFE Coliector-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc) IC = 50 Adc, IB = 10 Adc) -- VCE (sat) Vdc Base-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc) IC = 50 Adc, IB = 10 Adc) VBE(sat) Vdc Base-Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc) VBE(on) -- 1.8 Vdc fT 30 -- MHz Cob -- 600 pF Rise Time (VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc) tr -- 0.35 s Storage Time (VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc) ts -- 0.80 s Fall Time (VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc) tf -- 0.25 s DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (3) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (3) fT = |hfe| * ftest http://onsemi.com 3 2N6274 2N6275 2N6277 VCC 30 s RC 4.0 OHMS 0 - 18.5 V 1N3879 tr, tf 10 ns DUTY CYCLE = 0.5% td @ VBE(off) = 5.0 V 0.3 0.2 0.1 0.07 0.05 - 4.0 V IC/IB = 10 TJ = 25C 1.0 0.7 0.5 t, TIME (s) RB 10 OHMS + 21.5 V 2.0 + 80 V tr @ VCC = 80 V 0.03 NOTE: For information of Figures 3 and 6 , RB and RC were NOTE: varied to obtain desired test conditions. 0.02 0.5 0.7 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 20 30 50 Figure 3. Turn-On Time D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 P(pk) JC(t) = r(t) JC JC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.01 SINGLE PULSE 0.03 0.02 0.01 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 Figure 4. Thermal Response http://onsemi.com 4 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 2N6274 2N6275 2N6277 IC, COLLECTOR CURRENT (AMP) 100 50 20 10 5.0 TJ = 200C dc 5.0 ms 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 2.0 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) 2N6274 2N6275 CURVES APPLY BELOW 2N6277 RATED V(BR)CEO 0.5 0.2 0.1 0.05 0.02 0.01 2.0 3.0 50 70 100 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 5. Active-Region Safe Operating Area 5.0 3.0 IC/IB = 10 TJ = 25C C, CAPACITANCE (pF) t, TIME (s) IB = IB 1 2 ts 2.0 10,000 7000 5000 1.0 0.7 0.5 0.3 tf @ VCC = 80 V 0.2 0.1 0.07 0.05 0.5 0.7 1.0 TJ = 25C Cib 3000 2000 1000 700 500 Cob 300 200 5.0 7.0 10 2.0 3.0 20 IC, COLLECTOR CURRENT (AMP) 30 100 0.1 50 Figure 6. Turn-Off Time 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 5 50 100 1000 700 500 VCE = 4.0 V VCE = 10 V 300 hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N6274 2N6275 2N6277 TJ = 150C 200 + 25C 100 70 -55C 50 30 20 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 4.0 3.6 3.2 IC = 2.0 A V, TEMPERATURE COEFFICIENTS (mV/C) V, VOLTAGE (VOLTS) TJ = 25C 2.0 1.6 2.4 2.0 1.6 1.2 0.8 0.4 0 0.01 0.02 0 0.5 2.0 3.0 5.0 7.0 10 20 30 50 *APPLIES FOR IC/IB < +8.0 hFE@VCE 4.0V 4 -55C TO + 25C + 25C TO + 150C +6.0 *VC for VCE(sat) 0 VB for VBE -2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 Figure 10. "On" Voltages Figure 11. Temperature Coefficients TJ = 150C VCE = 100 V TJ = 150C IB , BASE CURRENT ( A) IC, COLLECTOR CURRENT (AMPS) +10 IC, COLLECTOR CURRENT (AMP) 100C 25C 100 10-2 -0.1 10 50 102 101 10-1 5.0 IC, COLLECTOR CURRENT (AMP) 103 102 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (AMPS) +12 + 2.0 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 4.0 V 0.7 1.0 0.05 + 4.0 VBE(sat) @ IC/IB = 10 0.8 0.4 TJ = 25C 30 A Figure 9. Collector Saturation Region 2.8 1.2 10 A 2.8 Figure 8. DC Current Gain 2.4 5.0 A IC = ICES REVERSE 0 100C 100 10-1 25C 10-2 FORWARD +0.1 VCE = 100 V 101 +0.2 +0.3 10-3 -0.1 +0.4 REVERSE 0 FORWARD +0.1 +0.2 +0.3 VBE, BASEEMITTER VOLTAGE (VOLTS) VBE, BASEEMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cut-off Region http://onsemi.com 6 +0.4 2N6274 2N6275 2N6277 PACKAGE DIMENSIONS CASE 197A-05 TO-204AE ISSUE J A N C -T- E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L 2 H G B M T Y 1 -Q- 0.25 (0.010) M INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N6274 2N6275 2N6277 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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