UNISONIC TECHNOLOGIES CO., 2N7002 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2 1 DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications 3 SOT-23 *Pb-free plating product number: 2N7002L FEATURES PIN CONFIGURATION * High density cell design for low RDS(ON). * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability PIN NO. PIN NAME 1 SOURCE 2 GATE 3 DRAIN MARKING 3P ORDERING INFORMATION Order Number Normal Lead free 2N7002-AE3-R 2N7002L-AE3-R www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Package Packing SOT-23 Tape Reel 1 QW-R206-037,B 2N7002 MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS 1M) Gate Source Voltage Continuous Non Repetitive(tp<50s) Maximum Drain Continuous Current Pulsed Maximum Power Dissipation Derated above 25C Operating Temperature Storage Temperature SYMBOL VDSS VDGR TOPR TSTG RATINGS 60 60 20 40 115 800 200 1.6 0 ~ +70 -40 ~ +150 SYMBOL JA RATINGS 625 VGSS ID PD UNIT V V V mA mW mW/C C THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction to Ambient UNIT C/W ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage, Forward Gate-Body leakage Reverse ON CHARACTERISTICS (Note) Gate Threshold Voltage IGSSF IGSSR VGS (th) Drain-Source On-Voltage VDS (ON) On-State Drain Current Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(ON) RDS (ON) gFS Ciss Coss Crss TEST CONDITIONS VGS=0V, ID=10A VDS=60V, VGS =0V TJ=125C VGS = VDS, ID=250A VGS = 10V, ID=500mA VGS = 5.0V, ID=50mA VGS=10V,VDS2VDS(ON) VGS =10V, ID=500mA TJ=100C VGS =5.0V, ID=50mA TJ=100C VDS2VDS(ON), ID=200mA VDS=25V,VGS=0V,f=1.0MHz MAX UNIT 0.5 1 100 -100 V mA A nA nA 60 1 500 80 2.1 0.6 0.09 2700 1.2 1.7 1.7 2.4 320 2.5 3.75 1.5 20 11 4 50 25 5 pF pF pF 20 nS 20 nS 1.5 V 0.8 A 115 mA tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP VGS =20V, VDS=0V VGS =-20V, VDS=0V VDD=30V, RL=150 ID=200mA, VGS =10V RGEN =25 VDD=30V, RL=25 ID=200mA, VGS=10V Turn-Off Time tOFF RGEN =25 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Is Diode Forward Current Note: Pulse Test: Pulse Width300s, Duty Cycle2.0% Turn-On Time MIN 0.88 V V mA 7.5 13.5 7.5 13.5 mS 2 QW-R206-037,B 2N7002 MOSFET TEST CIRCUIT AND WAVEFORM VDD RL VIN VOUT D VGS R GEN DUT G S Figure 1 t on t off tr t d (on) t d(off ) 90% Output , Vout tf 90% 10% 10% Inverted 90% Input, Vin 50% 50% 10% Pulse Width Figure 2. Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-037,B 2N7002 MOSFET 2 VGS=10V 9.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE, RDS (ON) DRAIN - SOURCE CURRENT, I D (A) TYPICAL CHARACTERICS 8.0V 7.0V 1.5 6.0V 1 5.0V 0.5 4.0V 3.0V 0 0 1 2 3 4 3 VGS=4.0V 4.5V 5.0V 2.5 6.0V 2 7.0V 8.0V 9.0V 10V 1.5 1 0.5 0.4 0 5 DRAIN - SOURCE VOLTAGE, VDS (V) DRAIN CURRENT, ID (A) VGS=10V ID=500mA 1.75 NORMALIZED DRAIN-SOURCE ON-RESISTANCE, R DS (ON) NORMALIZED DRAIN-SOURCE ON- RESISTANCE , R DS(ON) 3 2 1.5 1.25 1 0.75 - 50 - 25 0 25 75 50 VGS =10V 2.5 TJ =125 2 1.5 25 1 0.5 0 0 100 125 150 0.4 25 1.1 125 1.6 1. 8 1.2 0.4 0 0 2 4 6 8 10 GATE TO SOURCE VOLTAGE , VGS (V) Figure 7. Transfer Characteristics UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE, Vth VDS=10V 1.6 2 Figure 6. On-Resistance Varisation with Drain Current and Temperature Figure 5. On-Resistance Varisation with Temperature 2 1.2 0.8 DRAIN CURRENT,I D (A) JUCTION TEMPERATURE, TJ (C) DRAIN CURRENT, ID (A) 2 1.6 Figure 4. On-Resistance Varisation with Gate Voltage and Drain Current Figure 3. On-Region Characteristics 0.5 1.2 0 .8 VGS = VDS ID = 1mA 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 125 150 JUCTION TEMPERATURE, TJ (C) Figure 8. Gate Threshold Varisation with Temperature 4 QW-R206-037,B 2N7002 MOSFET 1.1 ID = 250A 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 -25 25 0 50 75 100 125 150 2 1 REVERSE DRAIN CURRENT, IS (A) NORMALIZED DRAIN-SOURCE VREAKDOWN VOLTAGE, BVDSS TYPICAL CHARACTERICS (cont.) VGS=0V 0.5 TJ =125 0.05 0.01 0.005 0.001 0.2 0.4 GATE-SOURCE VOLTAGE, VGS (V) 60 Ciss Coss Crss 2 VGS =0V f=1MHz 1 1 2 3 5 10 20 30 DRAIN CURRENT, ID (A) 100 s 1m s 10m s 0.05 1s DC 10s VGS=0V SINGLE PULSE TA=25 1 8 6 ID = 500mA 4 280mA 2 115 mA 0 0 0.8 0.4 1.6 1.2 2 Figure 12. Gate Charge Characteristics 0.1 0.005 VDS = 25V Figure 11. Capacitance Characteristics it it imm N) LLi S( ON) RRDDS(O 0.01 1.4 DRAIN TO SOURCE VOLTAGE, VDS (V) 3 1 1.2 GATE CHARGE, Qg (nC) 2 0.5 10 50 2 5 10 20 30 60 80 DRAIN TO SOURCE VOLTAGE, VDS (V) Figure 13. Maximum Safe Operating Area UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE, r (t) CAPACITANCE (pF) 40 5 1 Figure 10. Body Diode Forward Voltage Varisation with Temperature Figure 9. Breakdown Voltage Varisation with Temperature 10 0.8 0.6 BODY DIODE FORWARD VOLTAGE , VSD (V) JUCTION TEMPERATURE, TJ (C) 20 25 0.1 1 0.5 D=0.5 0.2 0.2 0.1 0.1 0.05 0.01 RJA ( t) =r (t)xRJA RJA =(See Datasheet) 0.05 0.02 0.01 P (pk) t1 Single Pulse t2 TJxTA =PxRJA (t) Duty Cycle, D=t1/t2 0.002 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t1, TIME (sec) Figure 14. Transient Thermal Response Curve 5 QW-R206-037,B 2N7002 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 QW-R206-037,B