UNISONIC TECHNOLOGIES CO.,
2N7002 MOSFET
www.unisonic.com.tw 1
Copyright © 2005 Unisonic Technologies Co., QW-R206-037,B
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC 2N7002 has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
FEATURES
* High density cell design for low RDS(ON).
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
MARKING
3P
SOT-23
1
2
3
*Pb-free plating product number: 2N7002L
PIN CONFIGURATION
PIN NO. PIN NAME
1 SOURCE
2 GATE
3 DRAIN
ORDERING INFORMATION
Order Number
Normal Lead free
Package Packing
2N7002-AE3-R 2N7002L-AE3-R SOT-23 Tape Reel
2N7002 MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R206-037,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V
Continuous ±20 Gate Source Voltage
Non Repetitive(tp<50µs) VGSS ±40 V
Continuous 115 Maximum Drain
Current Pulsed ID 800 mA
Maximum Power Dissipation
Derated above 25°C PD 200
1.6
mW
mW/°C
Operating Temperature TOPR 0 ~ +70 °C
Storage Temperature TSTG -40 ~ +150
THERMAL CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance, Junction to Ambient θJA 625 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V, ID=10µA 60 V
0.5 mA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V
TJ=125°C 1 µA
Gate-Body leakage, Forward IGSSF V
GS =20V, VDS=0V 100 nA
Gate-Body leakage Reverse IGSSR V
GS =-20V, VDS=0V -100 nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage VGS (th) V
GS = VDS, ID=250µA 1 2.1 2.5 V
VGS = 10V, ID=500mA 0.6 3.75
Drain-Source On-Voltage VDS (ON) VGS = 5.0V, ID=50mA 0.09 1.5
V
On-State Drain Current ID(ON) V
GS=10V,VDS≥2VDS(ON) 500 2700 mA
VGS =10V, ID=500mA
TJ=100°C 1.2
1.7
7.5
13.5 Ω
Static Drain-Source On-Resistance RDS (ON) VGS =5.0V, ID=50mA
TJ=100°C 1.7
2.4
7.5
13.5
Forward Transconductance gFS V
DS≥2VDS(ON), ID=200mA 80 320 mS
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss V
DS=25V,VGS=0V,f=1.0MHz 20 50 pF
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 4 5 pF
Turn-On Time tON
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
20 nS
Turn-Off Time tOFF
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
RGEN =25Ω
20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD V
GS=0V, Is=115mA (Note ) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current ISM
0.8 A
Maximum Continuous Drain-Source
Diode Forward Current Is
115 mA
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2N7002 MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3
www.unisonic.com.tw QW-R206-037,B
TEST CIRCUIT AND WAVEFORM
Figure 1
V
GS
R
GE N
V
DD
V
IN
R
L
V
OUT
DUT
G
D
S
Pulse Width
Input ,V
in
Output , V
out
t
on
t
off
t
d(off)
t
r
t
d(on)
t
f
Inverted
10%
10%10%
50%50%
90%
90%
90%
Figure 2. Switching Waveforms
2N7002 MOSFET
UNISONIC TECHNOLOGIES CO., LTD 4
www.unisonic.com.tw QW-R206-037,B
TYPICAL CHARACTERICS
054321
1.5
1
0.5
0
2
3.0V
2
1.6
1.2
0.80.4
V
GS
=4.0V
3
2. 5
2
1. 5
1
0
0.5
DRAIN - SOURCE CURRENT, I
D
(A)
DRAIN - SOURCE VOLTAGE, V
DS
(V)
V
GS
=10V
4.0V
5.0V
6.0V
7.0V
8.0V
9.0V
Figure 3. On-Region Characteristics
NORMALIZED DRAIN–SOURCE
ON–RESISTANCE, R
DS (ON)
DRAIN CURRENT, I
D
(A)
Figure 4. On-Resistance Varisation with Gate
Voltage and Drain Current
4.5V
5. 0V
6.0V
7.0V
8.0V
9.0V
10V
10075
0
-25
2
1.5
1
-50
0.5
1.61.2
0.8
0.4
V
GS
=10V
3
2.5
2
1.5
1
0
0.5
25 50 150
125
0.75
1.25
1.75
2
0
T
J
=125℃
25℃
NORMALIZED DRAIN-SOURCE
ON- RESISTANCE , R
DS (O N )
JUCTION TEMPERATURE, T
J
(°C)
Figure 5. On-Resistance Varisation
with Temperature
V
GS
=10V
I
D
=500mA
NORMALIZED DRAIN-SOURCE
ON-RESISTANCE, R
DS (ON )
DRAIN CURRENT,I
D
(A)
Figure 6. On-Resistance Varisation with Drain
Current and Temperature
010
8
6
42 100750-25-50 25 50 125
1.6
1.2
1.8
0.4
2
0
150
1.1
1.05
1
0.95
0.9
0.85
0.8
DRAIN CURRENT, I
D
(A)
GATE TO SOURCE VOLTAGE , V
GS
(V)
Figure 7. Transfer Characteristics
V
DS
=10V 25℃
125℃
NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE, V
th
JUCTION TEMPERATURE, T
J
(°C)
Figure 8. Gate Threshold Varisation
with Temperature
V
GS
= V
DS
I
D
= 1mA
2N7002 MOSFET
UNISONIC TECHNOLOGIES CO., LTD 5
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TYPICAL CHARACTERICS (cont.)
10075
0-25
1.1
1. 0 5
1
-50
0.92 5 11.20.8
0.4
1
0.5
0.1
0.05
0.01
0.2
0.005
25 50 150125
0.95
1.02 5
1.07 5
1. 4
0.001
0.97 5
0.6
2
NORMALIZED DRAIN-SOURCE
VREAKDOWN VOLTAGE, BV
DS S
JUCTION TEMPERATURE, T
J
(°C)
Figure 9. Breakdown Voltage Varisation
with Temperature
I
D
= 250μA
BODY DIODE FORWARD VOLTAGE , V
SD
(V)
Figure 10. Body Diode Forward Voltage Varisation
with Temperature
REVERSE DRAIN CURRENT, I
S
(A)
V
GS
=0V
T
J
=125℃
25℃
110
205
3
22
0.8
0.4
01.2 1.6
20
5
10
2
40
1
10
8
6
4
2
0
5030
60
280mA
115mA
CAPACITANCE (pF)
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
Figure 11. Capacitance Characteristics
V
GS
=0V
f=1MHz
C
rss
C
oss
C
iss
GATE CHARGE, Qg (nC)
Figure 12. Gate Charge Characteristics
GATE-SOURCE VOLTAGE, V
GS
(V)
I
D
= 500mA
V
DS
= 25V
60 8010 2052
0. 5
0. 05
0.1
0.01
1
0.005
30
2
3
RDS(ON)Limit
100μs
1
DRAIN CURRENT, I
D
(A)
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
Figure 13. Maximum Safe Operating Area
V
GS
=0V
SINGLE PULSE
T
A
=25℃
300
0.001
10
1
t1, TIME (sec)
100
10.10.010.0010.0001
0.002
0.01
0.05
0.1
0.2
0.5
Figure 14. Transient Thermal Response Curve
NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE, r (t)
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
t1t2
T
J
×T
A
=P×R
θJA (t)
Duty Cycle, D=t1/t2
P (pk)
R
θJA ( t)
=r (t)×R
θJA
R
θJA
=(See Datasheet)
1ms
10ms
R
DS(ON)
Limit
1s
10s
DC
2N7002 MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6
www.unisonic.com.tw QW-R206-037,B
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
