MS2267
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DESCRIPTION:DESCRIPTION:
The MS2267 is a high power Class C NPN transistor
specifically designed for TACAN/DME applications.
This device is capable of operation under moderate pulse
width and duty cycles. Low thermal resistance and
computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The MS2267 utilizes an emitter ballasted die geometry
capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤≤ 90°°C) 575 W
IC Device Current* 20 A
Vcc Collector-Supply Voltage* 50 V
TJ Junction Temperature (Pulsed RF Operation) 250 °°C
TSTG Storage Temperature -65 to +200 °°C
Thermal DataThermal Data
RTH(J-C) Junction-case Thermal Resistance∗∗ (1) 0.28 °°C/W
* Applies only to rated RF amplifier operation
(1) Infra-red scan of hot spot junction temperature at rated RF operating conditions
FeaturesFeatures
• 960 – 1215MHz
• 50 VOLTS
• 5:1 VSWR CAPABILITY @ RATED CONDITIONS
• INPUT/OUTPUT MATCHING
• POUT = 250 WATTS
• GP = 8.0 dB MINIMUM
•• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855