03/2006
AWT6307R
HELPTM Cellular CDMA 3.4 V/28 dBm
Linear Power Amplifier Module
PRELIMINARY DA T A SHEET - Rev 1.0
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
FEATURES
• InGaP HBT Technology
• High Efficiency:
21 % @ +16 dBm output
40 % @ +28 dBm output
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation
• Optimized for a 50 Ω System
• Low Profile Surface Mount Package: 1 mm
• CDMA 1XR TT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
• RoHS Compliant Package, 250 oC MSL-3
APPLICATIONS
• CDMA Wireless Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWT6307R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and
pHEMT devices on the same die, to enable state-
of-the-art reliability, temperature stability, and
ruggedness. The AWT6307R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter . Through
selectable bias modes, the AWT6307 achieves
optimal efficiency across different output power
levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity
in a 50 Ω system. Figure 1: Block Diagram
AWT6307R
Bias Control
VBATT
VEN
RFIN
RFOU
GND
VMODE
1
7
8
6
GND at slug (pad)
3
4
2
VCC
GND
5