Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CES IC = 100µA, VBE = 0 40 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 50 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 12 − − V
Collector Cutoff Current ICBO VCB = 30V, IE = 0 − − 100 nA
Emitter Cutoff Current IEBO VEB = 10V, IC = 0 − − 100 nA
ON Characteristics (Note 3)
DC Current Gain |hfe| IC = 200mA, VCE = 5V 25,000 65,000 150,000
IC = 500mA, VCE = 5V 15,000 35,000 −
IC = 1A, VCE = 5V 4,000 12,000 −
Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 2mA −1.2 1.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 2mA −1.85 2.0 V
Base−Emitter ON Voltage VBE(ON) IC = 1A, VCE = 5V −1.7 2.0 V
Dynamic Characteristics
Small−Signal Current Gain hFE IC = 200mA, VCE = 5V,
f = 100MHz, Note 2
1.0 3.2 −
Collector−Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz −2.5 6.0 pF
Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
B
C
E
B
C
E
NTE272 Schematic
NTE273 Schematic
Uniwatt darlington transistors can be used in any
number of low power applications, such as relay
drivers, motor control and as general purpose
amplifiers. As an audio amplifier these devices,
when used as a complementary pair, can drive
3.5 watts into a 3.2ohm speaker using a 14 volt
supply with less than one per cent distortion. Be-
cause of the high gain the base drive requirement
is as low as 1mA in this application. They are also
useful as power drivers for high current applica-
tion such as voltage regulators.
TO202N
Collector Connected to Tab
EBC
.050 (1.27)
.380 (9.65) Max
.280 (7.25) Max
.128 (3.28) Dia
.200 (5.08)
.100 (2.54)
.218
(5.55)
.160
(4.06)
.218
(5.55) .995
(25.3)
.475
(12.0)
Min