DATA SH EET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
DISCRETE SEMICONDUCTORS
BF457; BF458; BF459
NPN high-voltage transistors
b
ook, halfpage
M3D100
1996 Dec 09 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF457; BF458; BF459
DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package.
APPLICATIONS
•Intended for video output stages in black-and-white and
in colour television receivers.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
3 base Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
123 Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BF457 −−160 V
BF458 −−250 V
BF459 −−300 V
VCEO collector-emitter voltage open base
BF457 −−160 V
BF458 −−250 V
BF459 −−300 V
ICM peak collector current −−300 mA
Ptot total power dissipation Tmb ≤90 °C−−6W
h
FE DC current gain IC= 30 mA; VCE =10V 26 −−
C
re feedback capacitance IC=i
c= 0; VCE = 30 V; f = 1 MHz −−3.5 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 100 MHz −90 −MHz
1996 Dec 09 3
Philips Semiconductors Product specification
NPN high-voltage transistors BF457; BF458; BF459
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF457 −160 V
BF458 −250 V
BF459 −300 V
VCEO collector-emitter voltage open base
BF457 −160 V
BF458 −250 V
BF459 −300 V
VEBO emitter-base voltage open collector −5V
I
Ccollector current (DC) −100 mA
ICM peak collector current −300 mA
IBM peak base current −100 mA
Ptot total power dissipation Tmb ≤90 °C−6W
T
stg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient 104 K/W
Rth j-mb thermal resistance from junction to mounting base 10 K/W
1996 Dec 09 4
Philips Semiconductors Product specification
NPN high-voltage transistors BF457; BF458; BF459
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current
BF457 IE= 0; VCB = 100 V −−50 nA
IE= 0; VCB = 100 V; Tj= 150 °C−−5µA
I
CBO collector cut-off current
BF458 IE= 0; VCB = 200 V −−50 nA
IE= 0; VCB = 200 V; Tj= 150 °C−−5µA
I
CBO collector cut-off current
BF459 IE= 0; VCB = 250 V −−50 nA
IE= 0; VCB = 250 V; Tj= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain IC= 30 mA; VCE =10V 26 −−
V
CEsat collector-emitter saturation
voltage IC= 30 mA; IB=6mA −−1V
C
ccollector capacitance IE=i
e= 0; VCB =30V; f=1MHz −−4.5 pF
Cre feedback capacitance IC=i
c= 0; VCE = 30 V; f = 1 MHz −−3.5 pF
fTtransition frequency IC= 15 mA; VCE = 10 V; f = 100 MHz −90 −MHz
1996 Dec 09 5
Philips Semiconductors Product specification
NPN high-voltage transistors BF457; BF458; BF459
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.2 TO-126; SOT32.
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
handbook, full pagewidth
0.88
max
2.29
123
3.75
11.1
max
15.3
min
3.2
3.0
7.8 max
2.7
max
2.54
max
(1)
1.2
4.58 0.5
MBC076
90o