Product Bulletin OPB821 July 1996 (SP, OPTEK Slotted Optical Switches Types OPB821, OPB821S10, OPB821S5, OPB821S3 ANODE EMITTER ORANGE BLUE ~ ~ CATHODE COLLECTOR GREEN WHITE ( ) 360 (9.14) 4.50 (114,30 . 8.89 -250 (6.35) MIN 350 ( ) .230 (5.85) 285 (7.24) .265 (6.73) | : ssf tc Cor = > i i 610 (15.49) pe a) Co 395 (10.03) 590(14.99) (zx TTT .375 ( 9.53) sx co 7 Coes =i =P L_0 t t- 085 (2.16) + #26 AWG 075 (1.91) 085 2.16) | 080 (2.03) 1095 (2.41) ax R 2110 (2.79) OPTICAL Ct 130 (3.30) -070 (1.78) (990 (2.29) 110 (2.79) .130 (3.30) 120 (3.05) BOTTOM VIEW DIMENSIONS ARE IN INCHES (MILLIMETERS) Features e Three standard aperture sizes for high resolution e Low profile, 0.080" (2.03 mm) wide slot e 4,5" min, 26 AWG wire leads e TX-TXV process available (see Hi-Rel section) Description The OPB82iseries each consist of an infrared emitting diode and an NPN silicon phototransistor mounted in a low cost black plastic housing on opposite sides of a 0.080" (2.03 mm) wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. All assemblies have 0.040" (1.02 mm) wide apertures located in front of the infrared diode. For phototransistor side aperture size, see chart below. A minimum of 4.5" (114.3 mm) lead wires ease assembly where PC board mounting is not practical. Available with PC board mountable leads as OPB820 series. Phototransistor OPB# Aperture Width OPB821 0.040" OPB821S10 0.010" OPB821S5 0.005" OPB821S3 0.003" Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Storage and Operating Temperature Range -40 C to +80 C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering HON]. cece cece cece eee e eevee tense eteetutietnetunenenns 240 Cc") Input Diode Continuous Forward Current ........... 000 cece cece cece eee ener enee 50 mA Peak Forward Current (1 us pulse width, 300 pps)...................006- 3.0A Reverse Voltage... ccc cnn e ence eee ee enne ees 2.0V Power Dissipation. ...... 00... c ccc eect tee eee ee eeees 100 mw?) Output Phototransistor Collector-Emitter Voltage 2.0.0... e ee eennees 30 V Emitter-Collector Voltage... 0... ccc cece teen en eee eee 5.0 V Power Dissipation... 0... 00... ccc cece ee ec cette ete ence nes 100 mw) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (2) Derate linearly 1.82 mW? C above 25 C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. ~ (4) All parameters tested using pulse technique. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 12-88 (972) 323-2200 Fax (972) 323-2396Types OPB821, OPB821S10, OPB821S5, OPB821S3 Electrical Characteristics (Ta = 25 C unless otherwise noted) SYMBOL | PARAMETER | MIN | MAX | UNITS | TEST CONDITIONS Input Diode Ve Forward Voltage 1.70 Vv IF =20 mA IR Reverse Current 100 wA jVR=2V Output Phototransistor Pa V(BR)CEO Collector-Emitter Breakdown Voltage 30 V Ilc=1mA a S re [e) ae V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V le = 100 pA a at = IcEO Collector-Emitter Dark Current 100 nA |VcE=10V, Ir =0, Ee =0 Coupled Vcgsat) | Collector-Emitter OPB821 0.4 Vic = 250 pA, Ir = 20 mA Saturation Voltage OPB821S10 0.4 Vic = 250 pA, Ir = 20 mA OPB821S5 0.4 Vo jig = 125 pA, Ip = 20 mA Ic(ON) On-State Collector Current OPB821 500 uA |VcE= 5V, lp =20mA OPB821S10 | 400 uA jVce=5V, IF =20mA OPB821S5 300 A Voce =5V,lF=20mA OPB821S3 60 WA Voce =5V, lp =20mA Typical Performance Curves OPB821, OPB821S10, OPB821S5, OPB821S3 Normalized Output Current Rise and Fal! Time Normalized Output Current vs Input Current vs Load Resistance vs Ambient Temperature 300 300 S VoE=10 200 y 200 | 200 FE NORMALIZED yn? iF = 20 mA 100 f. a * = 100 yw ad 5 a0 2 a ro Typ & 8c 5 Z po CUE 5 S 5 S = 10 B 20Yy-20 wa Qo s z = = \ = = z +29, = Fe 20, mh {50% Duty Cyclel = yee so ma = typ = c= 2 NORMALIZED TO RISE TIME Ta = 25C 26 FALL TIME --- A 1 1 1 1 1 5 10 15 20 25 30 35 40 100 ik 5K 10K -490 -20 0 20 40 60 80 iF - FORWARD CURRENT - mA RL - LOAD RESISTANCE - ohms Ta - AMBIENT TEMPERATURE - C All Assemblies Forward Current Relative Output Current Reduction in Output Current Due to vs Forward Voltage Input Diede vs Time LED Heating vs Forward Current 40 1.0 35 106 4 e E 30 a oo | ++ ' - 08 ar 85 z 2 26 p~L_| TN +20 & 25 = sZ . | 5 3 og =e 90 =< - 20 5 B= | ce = 15 3 za 85 a = 0.4 Zo -20 2 $ er 1 ' = = 25 sot ICION) 1s read the instant LEO current is applied, They = ake wn mA z 3 o light path is then blocked with an opaque object. 30 ~ oc seconds later the opaque object 1s removed and _ 755 IC{ON) is tead again. This curve represents the per- cent reduction in IC(ON) between these two readings. 70 1 L 1 1 i 1 02 04 06 08 10 12 14 Tr 5 19 15 20~225~=COD8H AO Ve - FORWARD VOLTAGE - VOLTS t- TIME - HOURS ip - FORWARD CURRENT - mA wn Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 12-89