To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC1881(K) Silicon NPN Triple Diffused ADE-208-882 (Z) 1st. Edition September 2000 Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 k (Typ) 400 (Typ) 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 3 A Collector peak current I C(peak) 6 A 30 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. 2SC1881(K) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 60 -- -- V I C = 50 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 7 -- -- V I E = 50 mA, IC = 0 Collector cutoff current I CBO -- -- 0.2 mA VCB = 60 V, IE = 0 I CEO -- -- 0.4 mA VCE = 30 V, RBE = hFE 1000 -- -- 500 -- -- DC current transfer ratio VCE = 1.5 V I C = 1.5 A*1 I C = 2.5 A*1 Collector to emitter saturation voltage VCE(sat) -- -- 1.2 V I C = 2.5 A, IB = 20 mA*1 Turn on time t on -- 1 -- s VCC = 11 V, IC = 2 A, Turn off time t off -- 5 -- s I B1 = -IB2 = 8 mA Note: 1. Pulse test. Area of Safe Operation 10 Maximum Collector Dissipation Curve iC (peak) Collector current IC (A) 20 10 IC max 2 1.0 0.5 0.2 Ta = 25C 1 shot pulse 0.1 0 2 5 50 100 Case temperature TC (C) 150 s 0m =1 pw on rati Ope C) DC = 25 (T C Collector power dissipation PC (W) 30 0.05 1 2 5 10 20 50 100 Collector to emitter voltage VCE (V) 2SC1881(K) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 3,000 4 3.0 2.0 1.5 2 1.0 IB = 0.5 mA 1 0 25C 1,000 -30C 300 VCE = 1.5 V Pulse Test 100 0.1 1 2 3 4 Collector to emitter voltage VCE (V) 0.3 1.0 3 Collector current IC (A) Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) 4.0 3 DC current transfer ratio hFE TC = 80C TC = 25C 5 TC = 25C 3 Pulse Test IC / IB = 200 1.0 100 0.5 0.3 0.3 0.5 1.0 3 5 Collector current IC (A) 3 2SC1881(K) Response Waveform Switching Time Test Circuit IC 90% VIN VIN IB1 R1 0V 10% IB2 D.U.T. R2 VIN 0.002 0.002 - + - + 50 50 50 VBH 4 RL 90% 90% IC 0A VCC tr, tf 10 ns pw 100 s duty ratio 10% Unit R : C:F IC IB1 IB2 VCC VBB VIN RL R1 R2 A mA mA V V V 2 8 -8 11 -4 7.2 5 620 910 10% 10% td tstg ton toff 2SC1881(K) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. 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