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IXYS reserves the right to change limits, test conditions and dimensions. 20100706b
VBO 130
IdAV = 122 A
VRRM = 800-1800 V
Symbol Conditions Maximum Ratings
IdAV TC = 100°C, module 122 A
IdAV TA = 35°C (RthCA = 0.2 K/W), module 115 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 1800 A
VR = 0 t = 8.3 ms (60 Hz), sine 1950 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1600 A
VR = 0 t = 8.3 ms (60 Hz), sine 1800 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 16 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 16 200 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 12 800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 13 400 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL < 1 mA t = 1 s 3000 V~
MdMounting torque (M6) 5 ±15% Nm
Terminal connection torque (M6) 5 ±15% Nm
Weight typ. 270 g Dimensions in mm (1 mm = 0.0394")
Features
•Package with screw terminals
•Isolation voltage 3000 V~
•Planar passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
• UL registered E 72873
Applications
•Supplies for DC power equipment
•Input rectifiers for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling
VRSM VRRM Type
VV
900 800 VBO 130-08NO7
1300 1200 VBO 130-12NO7
1700 1600 VBO 130-16NO7
1900 1800 VBO 130-18NO7
Data according to IEC 60747 refer to a single diode unless otherwise stated.
Symbol Conditions Characteristic Values
IRVR = VRRM TVJ = 25°C < 0.3 mA
VR = VRRM TVJ = TVJM <5mA
VFIF= 300 A TVJ = 25°C < 1.65 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 3mΩ
RthJC per diode, 180° 0.65 K/W
per module 0.108 K/W
RthJK per diode; 180° 0.83 K/W
per module 0.138 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Single Phase
Rectifier Bridge
+
–
~
~
M
6
x
1
2
7
330
27
6.5
6.5
C~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
7
M6
~
~
+-
Preliminary data
