MURB1620CTRT4G - ON Semiconductor

February, 2012 − Rev. 8

1Publication Order Number:

MUR1620CTR/D

MUR1620CTRG,

MURB1620CTRG,

NRVUB1620CTRT4G

SWITCHMODE

Power Rectifier

These state−of−the−art devices are designed for use in negative

switching power supplies, inverters and as free wheeling diodes. Also,

used in conjunction with common cathode dual Ultrafast Rectifiers,

makes a single phase full−wave bridge.

Features

•Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package)

•Ultrafast 35 Nanosecond Reverse Recovery Times

•Exhibits Soft Recovery Characteristics

•High Temperature Glass Passivated Junction

•Low Leakage Specified @ 150°C Case Temperature

•Current Derating @ Both Case and Ambient Temperatures

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Complement to MUR1620CT and MURB1620CT Common Cathode

Device

•ESD Ratings:

♦Machine Model = C (> 400 V)

♦Human Body Model = 3B (> 16,000 V)

•NRVU Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•All Packages are Pb−Free*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: MUR1620CTR: 1.9 Grams (Approximately)

MURB1620CTR: 1.7 Grams (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

ULTRAFAST RECTIFIER

16 AMPERES, 200 VOLTS

2, 4

http://onsemi.com

D2PAK

CASE 418AJ

MARKING DIAGRAMS

U1620R = Device Code

KAK = Diode Polarity

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

AYWW

U1620RG

KAK

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

TO−220AB

CASE 221A

STYLE 7

AYWW

U1620RG

KAK

TO−220AB D2PAK

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G

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MAXIMUM RATINGS (Per Leg)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200 V

Average Rectified Forward Current

(Rated VR, TC = 160°C)

Per Leg

Per Total Device

IF(AV)

8.0

Peak Repetitive Surge Current

(Rated VR, Square Wave, 20 kHz, TC = 140°C)

Per Diode

IFM

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 100 A

Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS (Per Leg)

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W

Thermal Resistance, Junction−to−Ambient (D2PAK) RqJA 45 °C/W

ELECTRICAL CHARACTERISTICS (Per Leg)

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 8.0 Amps, TC = 25°C)

(iF = 8.0 Amps, TC = 150°C)

vF1.2

1.1

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TC = 25°C)

(Rated dc Voltage, TC = 150°C)

iR5.0

500

Maximum Reverse Recovery Time

(IF = 1.0 Amp, di/dt = 50 Amps/ms)

trr 85

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

ORDERING INFORMATION

Device Package Shipping†

MUR1620CTRG TO−220

(Pb−Free)

50 Units / Rail

MURB1620CTRG D2PAK−3

(Pb−Free)

50 Units / Rail

MURB1620CTRT4G D2PAK−3

(Pb−Free)

800 / Tape & Reel

NRVUB1620CTRT4G D2PAK−3

(Pb−Free)

800 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G

http://onsemi.com

Figure 1. Typical Forward Voltage (Per Leg)

vF, INSTANTANEOUS VOLTAGE (VOLTS)

0 0.60.4 0.8

0.1

0.3

0.2

2.0

1.0

100

7.0

3.0

0.5

5.0

VR, REVERSE VOLTAGE (VOLTS)

06040 100 120

500

1000

0.1

0.05

0.02

200

100

TJ = 175°C

20 80 200

Figure 2. Typical Reverse Current* (Per Leg)

TC, CASE TEMPERATURE (°C)

140 150

4.0

2.0

6.0

8.0

180

Figure 3. Current Derating, Case (Per Leg)

0.7

1.0 1.41.2

100°C

TJ = 175°C

25°C

160 180140

0.5

0.2

100°C

25°C

160 170

RATED VR APPLIED

SQUARE WAVE

0.2

150°C

RqJC = 2°C/W

0.01

150°C

* The curves shown are typical for the highest

voltage device in the voltage grouping. Typical

reverse current for lower voltage selections can

be estimated from these same curves if VR is

sufficiently below rated VR.

IR, REVERSE CURRENT (mA)

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

, INSTANTANEOUS FORWARD CURRENT (AMPS)

0 4.0

2.0

4.0

6.0

8.0

8.0 12 16

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Power Dissipation (Per Leg)

TJ = 175°C

SQUARE

WAVE

2.0 6.0 10 14

PF(AV), AVERAGE POWER DISSIPATION (WATTS)

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G

http://onsemi.com

0.01

0.02

0.05

0.1

0.2

0.5

1.0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

t, TIME (ms)

Figure 5. Thermal Response

D = 0.5

0.05

SINGLE PULSE

P(pk)

DUTY CYCLE, D = t1/t2

ZqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT T1

TJ(pk) − TC = P(pk) ZqJC(t)

0.1

0.01

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

Figure 6. Thermal Response, Junction−to−Ambient

PULSE TIME (sec)

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

0.001

R(t) (°C/W)

0.01

0.1

100

50% Duty Cycle

20%

10%

Single Pulse

1000

200

100

300

1.0 10 100

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Capacitance (Per Leg)

C, CAPACITANCE (pF)

400

500

600

700

800

900

0.1 0.2 0.3 0.5 0.7 0.2 0.3 0.5 0.7 20 30 50 70

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G

http://onsemi.com

PACKAGE DIMENSIONS

D2PAK−3 (TO−263, 3−LEAD)

CASE 418AJ

ISSUE A

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.330 0.380 8.38 9.65

E0.380 0.420 9.65 10.67

A0.160 0.190 4.06 4.83

b0.020 0.039 0.51 0.99

c2 0.045 0.065 1.14 1.65

e0.100 BSC 2.54 BSC

A1 0.000 0.010 0.00 0.25

c0.012 0.029 0.30 0.74

L0.070 0.110 1.78 2.79

H0.575 0.625 14.60 15.88

L2 −−−− 0.070 −−−− 1.78

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. CHAMFER OPTIONAL

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH. MOLD FLASH SHALL NOT EXCEED 0.005

PER SIDE. THESE DIMENSIONS ARE MEASURED

AT THE OUTERMOST EXTREMES OF THE

PLASTIC BODY AT DATUM H.

5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN

DIMENSIONS E, L1, D1 AND E1.

6. OPTIONAL MOLD FEATURE

E1 0.245 −−−− 6.22 −−−−

L1 −−−− 0.066 −−−− 1.68

D1 0.260 −−−− 6.60 −−−−

L3 0.010 BSC 0.25 BSC

M08 08°° °°

A1 B

MDETAIL C

SEATING

PLANE

0.10 B

BSEATING

PLANE

DETAIL C

VIEW A−A

SIDE VIEW

TOP VIEW

VIEW A−A

OPTIONAL CONSTRUCTIONS

GAUGE

PLANE

NOTE 3

0.10 B

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

RECOMMENDED

0.366

0.100

DIMENSIONS: INCHES

PITCH

0.653

0.063

0.436

0.169

SOLDERING FOOTPRINT*

NOTE 6

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 7:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. ANODE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,

affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury

or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

MUR1620CTR/D

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