PACKAGE DRAWINGS
(Unit: mm)
SILICON TRANSISTOR
The
µ
PA800T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4228)
ORDERING INFORMATION
PART NUMBER
QUANTITY PACKING STYLE
µ
PA800T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA800T-T1 Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC35 mA
Total Power Dissipation PT150 in 1 element mW
200 in 2 elements Note
Junction Temperature Tj150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note 110 mW must not be exceeded in 1 element.
µ
PA800T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
©1995
PRELIMINARY DATA SHEET
Printed in Japan
Document No. ID-3634
(O.D. No. ID-9141)
Date Published April 1995 P
The information in this document is subject to change without notice.
2.1±0.1
1.25±0.1
123
654
0.2
–0
+0.1
0.650.65
1.3
2.0±0.2
0.9±0.1
0.7
0~0.1
0.15
–0
+0.1
654
Q
1
Q
2
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
XY
µ
PA800T
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 10 V, IE = 0 1.0
µ
A
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 1.0
µ
A
DC Current Gain hFE VCE = 3 V, IC = 5 mANote 1 80 200
Gain Bandwidth Product fTVCE = 3 V, IC = 5 mA 5.5 80 GHz
Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHzNote 2 0.7 pF
Insertion Power Gain (1) |S21e|2VCE = 1 V, IC = 3 mA, f = 2 GHz 4.5 6.5 dB
Insertion Power Gain (2) |S21e|2VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 7.5 dB
Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.9 3.2 dB
Noise Figure (2) NF VCE = 3 V, IC = 5 mA, f = 2 GHz 1.9 3.2 dB
Notes 1. Pulse Measurement: Pw ≤ 350
µ
s, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank KB
Marking RL
hFE Value 80 to 200
TYPICAL CHARACTERISTICS (TA = 25 °C)
100
0
5
0
10
0.5
50 100 150
200
5 1.0
10
15
20
0 0.5 1.0
10
20
1 5 10 50
20
50
100
200
VCE = 3 V VCE = 3 V
120 A
100 A
80 A
IB = 20 A
Total Power Dissipation PT (mW)
Ambient Temperature TA (°C) Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Collector Current IC (mA)
Base to Emitter Voltage VBE (V) Collector Current IC (mA)
DC Current Gain hFE
60 A
40 A
25
Free Air
IC - VBE Characteristics hFE - IC Characteristics
PT - TA Characteristics IC - VCE Characteristics
2 Elements in Total
Per Element
160 A
µ
140 A
µ
µ
µ
µ
µ
µ
µ
µ
PA800T
3
0
0.5
0
0.5
1 5 10 50
4
8
12
0.1 1.00.5 5.0
0
5
10
15
20
25
1 5 10 50
1
2
3
4
5
V
CE
= 3 V
I
C
= 5 mA
V
CE
= 3 V
f = 2 GHz
V
CE
= 3 V
f = 2 GHz
2.0
0.110
0.5
2 5 10 20 50
0.2
0.5
1.0
2.0
5.0
1 5 10 50
2
4
6
8
10
f = 1 MHz V
CE
= 3 V
f = 2 GHz
C
re
- V
CB
Characteristics
Collector to Base Voltage V
CB
(V)
Feed-back Capacitance C
re
(pF)
f
T
- I
C
Characteristics
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
l S
21e
l
2
- I
C
Characteristics
Collector Current I
C
(mA)
Insertion Power Gain | S
21e
|
2
(dB)
Frequency f (GHz)
Insertion Power Gain | S
21e
|
2
(dB)
| S
21e
|
2
- f Characteristics
NF - I
C
Characteristics
Collector Current I
C
(mA)
Noise Figure (dB)
µ
PA800T
4
S-PARAMETERS
VCE = 3 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY S11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100.00 .875 –18.6 14.087 161.1 .018 78.2 .958 –10.1
200.00 .762 –35.0 12.290 145.1 .034 68.6 .888 –17.7
300.00 .677 –47.2 10.888 133.6 .048 66.6 .800 –24.4
400.00 .565 –59.4 9.275 123.6 .055 65.8 .719 –26.7
500.00 .495 –67.5 8.300 115.7 .063 63.5 .669 –28.7
600.00 .425 –76.1 7.184 108.9 .074 61.1 .610 –30.3
700.00 .372 –81.6 6.454 104.8 .084 63.8 .600 –30.6
800.00 .327 –88.5 5.818 99.5 .089 62.7 .560 –31.3
900.00 .289 –93.6 5.231 95.5 .092 64.6 .543 –30.1
1000.00 .255 –100.5 4.820 92.0 .104 62.8 .519 –33.4
1100.00 .236 –105.2 4.444 88.8 .105 64.2 .512 –31.8
1200.00 .214 –112.2 4.142 85.3 .113 64.2 .497 –33.4
1300.00 .195 –117.6 3.842 83.2 .122 63.6 .476 –33.2
1400.00 .182 –123.8 3.554 79.3 .127 65.0 .481 –34.2
1500.00 .165 –129.9 3.343 77.4 .139 64.1 .467 –34.6
1600.00 .153 –137.4 3.218 75.3 .140 64.5 .466 –34.8
1700.00 .145 –144.3 3.091 73.6 .152 65.4 .458 –37.2
1800.00 .139 –151.8 2.857 70.4 .162 64.3 .456 –36.1
1900.00 .134 –157.0 2.764 68.7 .168 62.3 .451 –38.4
2000.00 .129 –164.7 2.624 66.4 .176 64.8 .445 –39.0
VCE = 3 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY S11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100.00 .943 –13.4 9.384 165.9 .020 84.1 .969 –7.7
200.00 .868 –26.6 8.668 152.8 .038 77.2 .936 –13.8
300.00 .815 –37.7 8.165 142.9 .051 67.9 .876 –20.9
400.00 .717 –48.9 7.279 132.9 .062 63.9 .804 –23.5
500.00 .655 –56.8 6.780 125.5 .075 63.9 .764 –26.7
600.00 .577 –65.5 6.061 118.0 .084 60.0 .708 –29.7
700.00 .518 –71.2 5.504 112.8 .091 59.7 .685 –31.1
800.00 .468 –78.1 5.074 106.7 .098 57.0 .639 –32.0
900.00 .420 –83.7 4.632 102.8 .102 59.0 .611 –32.8
1000.00 .380 –90.6 4.340 98.3 .105 56.6 .592 –35.0
1100.00 .344 –94.8 3.951 94.8 .112 57.8 .579 –34.1
1200.00 .321 –101.6 3.717 90.5 .121 59.0 .551 –35.0
1300.00 .291 –105.9 3.485 87.6 .128 58.7 .532 –35.9
1400.00 .273 –111.7 3.306 84.3 .135 59.8 .535 –36.6
1500.00 .250 –117.2 3.134 80.7 .140 58.0 .511 –37.5
1600.00 .228 –122.4 2.959 79.0 .145 59.5 .516 –37.7
1700.00 .219 –128.5 2.819 76.0 .153 59.0 .504 –39.0
1800.00 .199 –135.3 2.699 73.9 .161 58.4 .493 –39.9
1900.00 .193 –139.6 2.572 71.9 .163 60.3 .489 –41.4
2000.00 .182 –146.9 2.474 68.3 .175 59.8 .482 –41.4
VCE = 3 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY S11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100.00 1.023 –7.6 3.505 172.1 .025 86.4 .995 –4.6
200.00 .983 –16.1 3.400 163.3 .039 79.3 .986 –7.8
300.00 .975 –22.4 3.368 157.3 .061 74.6 .976 –12.8
400.00 .922 –31.8 3.219 149.1 .075 70.7 .936 –15.1
500.00 .899 –36.9 3.186 143.3 .093 66.4 .922 –18.8
600.00 .849 –44.7 3.046 135.7 .105 62.2 .885 –22.5
700.00 .812 –50.6 2.905 131.1 .113 61.7 .880 –24.4
800.00 .774 –57.1 2.830 124.4 .128 55.7 .846 –27.2
900.00 .727 –62.9 2.694 119.2 .134 55.6 .808 –28.8
1000.00 .680 –69.3 2.597 114.1 .146 53.7 .790 –31.8
1100.00 .651 –74.1 2.479 109.3 .146 50.3 .766 –32.8
1200.00 .616 –79.8 2.392 104.8 .155 49.8 .741 –34.9
1300.00 .575 –85.2 2.302 101.1 .155 46.2 .714 –35.9
1400.00 .546 –90.6 2.207 96.0 .160 46.7 .708 –36.8
1500.00 .512 –95.8 2.110 92.1 .168 43.6 .685 –38.4
1600.00 .481 –100.6 2.034 88.8 .165 45.5 .676 –40.1
1700.00 .463 –106.3 1.989 85.5 .176 45.3 .667 –41.8
1800.00 .440 –111.8 1.903 82.2 .173 43.8 .649 –42.3
1900.00 .419 –116.4 1.854 78.9 .174 43.5 .633 –44.2
2000.00 .394 –121.2 1.779 75.5 .173 43.7 .630 –45.2
µ
PA800T
5
[MEMO]
µ
PA800T
6
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
