VSD
RF_OUT
VDD
RF_IN
BIAS
C
C2
C
C1 Amplifier2
AMP1
Surface Mount
2.0 x 2.0 x 1.1 mm3
O
AY
WW
Note:
Package marking
provides Orientation
and identification
“A” = Product Code
“Y” = Year
“WW” = Work Week
GND
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
Bottom View
LNA I/O’s :
1. NC
2. RF_IN
3. NC
BOTTOM PADDLE : GND
4. VSD
5. RF_OUT
6. VDD
Pin Configuration
ALM-1106
GPS Low Noise amplifier with Variable bias current and
Shutdown function
Data Sheet
Description
Avago Technologies’s ALM-1106 is a LNA
designed for GPS/ISM/Wimax applications in
the (0.9-3.5)GHz frequency range. The LNA
uses Agilent Technologies’s proprietary GaAs
Enhancement-mode pHEMT process to achieve
high gain operation with very low noise figures
and high linearity. Noise figure distribution is
very tightly controlled. Gain and supply current
are guaranteed parameters. A CMOS compatible
shutdown pin is included to turn the LNA off
and provide a variable bias.
The ALM-1106 LNA is useable down to 1V
operation. It achieves low noise figures and
high gain even at 1V, making it suitable for
use in critical low power GPS/ISM band
applications.
Simplified Schmatic
Features
•Advanced GaAs E-pHEMT
•Low Noise: 0.8 dB typ
•High Gain : 14.3 dB typ
•Low component count
•High IIP3 and IP1dB
•Wide Supply Voltage: 1V to 3.6V
•Shutdown current : < 0.1uA
•CMOS compatible shutdown pin (VSD) current @ 2.85V
: 90uA
•Adjustable bias current via one single external
resistor/voltage
•Small Footprint: 2x2mm2
•Low Profile: 1.1mm typ
•Ext matching for non-GPS freq band operation
Specifications (25 deg): At 1.575GHz, 2.85V 8mA (Typ)
•Gain = 14.3 dB (Typ)
•NF = 0.8 dB (Typ)
•IIP3 = 4.7 dBm (Typ)
•IP1dB = 1.8 dBm (Typ)
•S11 = -11.8 dB (Typ)
•S22 = -12.4 dB (Typ)
Typical performance @ 1.0V supply
S21 = 12.3dB
NF = 1.0dB
Ids = 3.6mA
Note:
Measurements obtained using demoboard described in Figure 4.
2
Absolute Maximum Ratings [1]
Product Consistency Distribution Charts [5,6]
Symbol Parameter Units Absolute Maximum
VDS Drain - Source Voltage[2] V 3.6
IDS Drain Current[2] mA 15
Pdiss Total Power Dissipation [3] mW 54
Pin max. RF Input Power dBm +10
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θch_b Thermal Resistance [4] °C/W 232
Figure 1. Gain @ 1.575GHz; LSL = 12.7dB, Nominal = 14.3dB, USL =
15.8dB
Figure 2. NF @ 1.575GHz; Nominal = 0.8dB, USL = 1.3dB
-3 Std +3 Std
Stdev = 0.4
12 13 14 15 16 17
0
1000
2000
3000
4000
+3 Std
Stdev = 0.1
0 0.3 0.6 0.9 1.2 1.5
0
1000
2000
3000
4000
+3 Std
Stdev = 1.8
3579111315
0
500
1000
1500
2000
2500
3000
Figure 3. Ids @ 1.575GHz; Nominal = 8mA, USL = 13mA
Notes:
5. Distribution data sample size is 10K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
Notes:
1. Operation of this device above any
one of these parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 4.32mW/°C for TB > 137 °C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
3
Electrical Specifications
TA = 25 °C, DC bias for RF parameter is VDD = VSD = +2.85V @ 8mA (unless otherwise specified)
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance (VSD=VDD, R1=0 Ohm)
Symbol Parameter and Test Condition Units Min. Typ Max.
G Gain dB 12.7 14.3 15.8
NF Noise Figure dB - 0.8 1.3
IP1dB Input 1dB Compressed Power dBm 1.8
IIP3 Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm 4.7
S11 Input Return Loss dB -11.8
S22 Output Return Loss dB - 12.4
Ids Supply Current mA 8 13
Ish Shutdown Current @ VSD = 0V uA 0.1
Vds Supply Voltage V 2.85
IP1dB1710M Out of Band IP1dB (DCS 1710MHz) blocking dBm 2.9
IIP3OUT Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 5.5
Symbol Parameter and Test Condition Units VDD=2V VDD=1.5V VDD=1.0V
G Gain dB 15 14.2 12.3
NF Noise Figure dB 0.8 0.9 1
IP1dB Input 1dB Compressed Power dBm -1.4 -2.4 -3.8
IIP3 Input 3rd Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm 7.3 4.9 5.2
S11 Input Return Loss dB -13.8 -11.5 -8
S22 Output Return Loss dB -15.5 -14.5 -11.7
Ids Supply Current mA 13 7.5 3.6
Ish Shutdown Current @ VSD = 0V uA 0.1 0.1 0.1
Vds Supply Voltage V 2 1.5 1.0
IP1dB1710M Out of Band IP1dB (DCS 1710MHz) blocking dBm -0.3 -1.9 -2.9
IIP3OUT Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 8.7 5.8 3
Table 1. Performance table at nominal operating conditions
Table 2 – Typical performance at low operation voltages with R1 (see Fig 5) set to 0 Ohm
VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz – Typical Performance
4
GPS LNA
RF IN RF OUT
MAR 2005 TL.
Agilent
Technologies
H 0.010
W 0.0220
e 3.48
GND
GND
VDD
SD
0.1µF
12Ω / / 33nH
100pF
6.8pF
10nH
5.6nH
4.7nH
6.8pF
18k
Figure 4. Demoboard and Application Circuit Components
Figure 5. Demoboard schematic
+VDD
RF_OUT
VSD
RF_IN
Johanson 0402
Johanson 0402
Johanson 0402
Toko LL1005
BIAS
L
L3
R=
L=4.7 nH
C
C5
C=6.8 pF
L
L2
L=10 nH
L
L1
L=5.6 nH
R
R1
R=18 kOhm
C
C4
C=6.8 pF
C
C2
C
C3
C=0.1 uF PRL
PRL1
L=33 nH
R=12 Ohm
C
C1
Amplifier2
AMP1
Notes
•L1 and L2 form the input matching network.
The LNA module has a integrated coupling
and DC-blocking capacitors at the input and
output. Best noise performance is obtained
using high-Q wirewound inductors. This
circuit demonstrates that low noise figures
are obtainable with standard 0402 chip
inductors. Replacing L1, L2 and L3 with high-
Q wirewound inductors (eg. Cilcraft 0402CS
series) will yield 0.1dB lower NF and 0.6dB
higher Gain.
•L3 is an output matching inductor.
•C5 is a RF bypass capacitor.
•PRL1 is a network that isolates the
measurement demoboard from external
disturbances. C3 and C4 mitigates the effect
of external noise pickup on the VSD and VDD
lines. These components are not required in
actual operation.
•Bias control is achieved by either varying the
VSD voltage without R1 or fixing the VSD
voltage to VDD and varying R1. Typical value
for R1 is 18k Ohm for 8mA total current at
VDD=+2.85V.
•Higher gain and IP3 performance can be
obtained by increasing the supply current.
This can be achieved by reducing the value
for R1 to obtain desired current.
•For low voltage operation such as 1.5V or
1.0V, the R1 may be omitted and VSD
connected directly to the supply pins.
5
ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25°C unless specified otherwise)
Figure 6. Gain vs Vdd vs Freq
Figure 10. Ids vs Vdd vs Freq
Figure 9. IP1dB vs Vdd vs Freq
Figure 8. IIP3 vs Vdd vs Freq
Figure 7. NF vs Vdd vs Freq
9
10
11
12
13
14
15
16
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Gain (dB)
1.575GHz
2GHz
2.4GHz
0.7
0.75
0.8
0.85
0.9
0.95
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
NF (dB)
1.575GHz
2GHz
2.4GHz
0
2
4
6
8
10
12
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IIP3 (dBm)
1.575GHz
2GHz
2.4GHz
0
1
2
3
4
5
6
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IP1dB (dBm)
1.575GHz
2GHz
2.4GHz
0
2
4
6
8
10
12
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Ids (mA)
1.575GHz
2GHz
2.4GHz
6
ALM-1106 Typical Performance Curves, R1 = 18K Ohm (At 25°C unless specified otherwise)
Figure 11. Gain vs Vdd vs Temp Figure 12. NF vs Vdd vs Temp
Figure 13. IIP3 vs Vdd vs Temp Figure 14. IP1dB vs Vdd vs Temp
Figure 15. Ids vs Vdd vs Temp
11
12
13
14
15
16
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Gain (dB)
25 deg
-40 deg
85 deg
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
NF (dB)
25 deg
-40 deg
85 deg
0
1
2
3
4
5
6
7
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IIP3 (dBm)
25 deg
-40 deg
85 deg
0
0.5
1
1.5
2
2.5
3
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
IP1dB (dBm)
25 deg
-40 deg
85 deg
4
5
6
7
8
9
10
11
12
2.4 2.6 2.8 3 3.2 3.4
Vdd (V)
Ids (mA)
25 deg
-40 deg
85 deg
7
ALM-1106 Typical Scattering Parameters at 25°C, VDD = 2.85V, IDS = 8 mA
Freq. S11 S21 S12 S22
(GHz) Mag. Ang. (dB) Mag. Ang. (dB) Mag. Ang. Mag. Ang.
0.1 0.998 -4.7 15.01 5.633 176.7 -47.96 0.004 89.2 0.526 -5
0.5 0.946 -23.5 14.62 5.381 153.1 -34.42 0.019 78.6 0.503 -19
0.9 0.866 -40.4 13.72 4.854 134.1 -29.90 0.032 71.8 0.475 -31.9
1 0.843 -44.4 13.47 4.714 129.7 -29.37 0.034 70.5 0.468 -34.9
1.1 0.821 -48.2 13.20 4.573 125.5 -28.64 0.037 69.3 0.459 -37.9
1.2 0.8 -52 12.95 4.44 121.5 -27.96 0.04 68.5 0.451 -40.5
1.3 0.78 -55.8 12.69 4.31 117.6 -27.33 0.043 67.4 0.443 -43.2
1.4 0.757 -59.7 12.42 4.178 113.6 -26.94 0.045 66.5 0.435 -45.8
1.5 0.731 -63.4 12.13 4.039 109.7 -26.38 0.048 65.7 0.428 -48.2
1.6 0.705 -66.8 11.83 3.905 106.1 -26.02 0.05 64.8 0.421 -50.7
1.7 0.683 -69.7 11.55 3.78 102.9 -25.51 0.053 64.7 0.414 -52.8
1.8 0.663 -71.6 11.29 3.669 99.5 -25.19 0.055 63.9 0.408 -55.5
1.9 0.643 -73.4 10.99 3.544 96 -24.73 0.058 63.1 0.399 -58
2 0.623 -75.3 10.48 3.343 97 -24.58 0.059 66.3 0.398 -58.8
2.1 0.603 -77.2 10.25 3.253 93.5 -24.15 0.062 65.5 0.398 -59.6
2.2 0.583 -79 10.01 3.165 90.2 -23.74 0.065 64.6 0.397 -60.3
2.3 0.563 -80.9 9.77 3.079 87 -23.48 0.067 63.8 0.396 -61.1
2.4 0.543 -82.8 9.49 2.983 83.8 -23.10 0.07 63 0.396 -62.1
2.5 0.522 -85.3 9.23 2.895 81.1 -22.73 0.073 62.3 0.395 -62.7
3 0.434 -105.2 7.95 2.498 66.6 -21.21 0.087 56.9 0.345 -74.4
3.5 0.334 -119.5 6.47 2.105 57.3 -20.26 0.097 54 0.324 -86.8
4 0.302 -132.1 6.25 2.054 48.8 -18.42 0.12 53.7 0.271 -108
4.5 0.297 -141.8 5.50 1.883 33.1 -16.95 0.142 43.4 0.265 -113.3
5 0.274 -157.1 4.44 1.667 23.9 -15.97 0.159 38 0.259 -118.6
5.5 0.254 -170.1 3.63 1.519 16.1 -15.04 0.177 33.7 0.26 -133.2
6 0.211 178.7 2.82 1.383 6.3 -14.11 0.197 25.3 0.249 -142.7
6.5 0.204 165.4 1.89 1.243 -0.7 -13.64 0.208 16.7 0.263 -154.7
7 0.189 137.1 1.56 1.197 -5.4 -13.27 0.217 12.7 0.306 -171.3
7.5 0.193 117.3 1.03 1.126 -14.4 -12.88 0.227 9.5 0.31 179.8
8 0.206 90.6 0.87 1.105 -22.2 -12.40 0.24 4.7 0.314 170.8
ALM-1106 Typical Noise Parameters, VDD = 2.85V, IDS = 8mA
Freq (GHz) Fmin (dB) Γopt Mag. Γopt Ang. Rn/50 NF @ 50dB
0.5 0.53 0.64 13.8 0.41 1.46
0.9 0.65 0.69 32.2 0.28 1.07
1.5 0.8 0.71 47.4 0.24 1.22
1.7 0.82 0.69 58.1 0.22 1.14
2 0.91 0.68 59.5 0.23 1.1
2.4 0.93 0.64 71.3 0.27 1.72
3 1.21 0.52 99.2 0.16 1.45
3.5 1.33 0.44 135.8 0.12 1.6
4 1.69 0.35 161.3 0.08 1.27
4.5 1.73 0.31 171.3 0.06 1.47
5 1.82 0.32 -179.6 0.06 1.65
5.5 1.98 0.34 -171.2 0.08 2.16
5.8 2.37 0.43 -174.8 0.14 2.88
8
2.00 ± 0.10
2.00 ± 0.10
1.10 ± 0.10
TOPVIEW SIDEVIEW
PIN 1
O
AY
WW
(4X) 0.65
0.40 R 0.15
(6X) 0.36
1.66
(6X) 0.10
(6X) 0.43
(3X) 0.94
BOTTOM VIEW
6
4
PIN 1
3
Package Dimensions
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
Tape Dimensions
Notes:
1. Measured from centerline of sprocket hole to centerline of pocket
2. Cumulative tolerance of 10 sprocket holes is ± 0.20
All dimensions in millimeters unless otherwise stated.
Existing Thermal Ground to pad clearance = 0.16mm
Samsung Thermal Ground to pad min clearance = 0.25mm
9
Reel Dimensions
FRONT VIEW
BACKFRONT
SEE DETAIL "x"
RECYCLE LOGO
∅178.0 ± 1.0
BACK VIEW
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm ∅51.2 ± 0.3
Slot hole 'o'
14.4*
MAX
FRONT BACK
∅178.0± 1.0
∅55.0 ± 0.5
60˚
Slot hole 'b'
R5.2
R10.65
65˚ 45˚
7.9 - 10.9**
8.4 +1.5*
- 0.0
Part Number No. of Devices Container
ALM-1106-TR1 3000 7" Reel
ALM-1106-TR2 10000 13" Reel
ALM-1106-BLK 100 antistatic bag
Part Number Ordering Information
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-3889EN
AV01-0028EN - February 22, 2006
