2N3507A
Silicon NPN Transisto
r
Data Sheet
Description
SEMICOA offers:
• Screening and processing per MIL-PRF-19500 Appen di x E
• JAN level (2N3507AJ)
• JANTX level (2N3507AJX)
• JANTXV level (2N3507AJV)
• JANS level (2N3507AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose switching transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geom et ry 150 6
• Reference document:
MIL-PRF-19500/349
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 50 Volts
Collector-Base Voltage VCBO 80 Volts
Emitter-Base Voltage VEBO 5 Volts
Collector Current, Continuous IC3 A
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT1
5.71 W
mW/°C
Power Dissipation, TC = 25OC
Derate linearly above 25OC PT5
28.6 W
mW/°C
Thermal Resistance RθJA 175 °C/W
Operating Junction Temperature
Storage Temperature TJ
TSTG -65 to +200 °C
Copyright© 2007 SEMICOA
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3507A
Silicon NPN Transisto
r
Data Sheet
Copyright© 2007 SEMICOA
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage V(BR)CBO IC = 100 µA 80
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 50 Volts
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 5
Volts
Collector-Emitter Cutoff Current ICEX1 VCE = 60 Volts, VEB = 4 Volts 1 µA
Collector-Emitter Cutoff Current ICEX2 VCE = 60 Volts, VEB = 4 Volts,
TA = 150°C 1.5
mA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 500 mA, VCE = 1 Volts
IC = 1.5 A, VCE = 2 Volts
IC = 2.5 A, VCE = 3 Volts
IC = 3.0 A, VCE = 5 Volts
IC = 500 mA, VCE = 2 Volts
TA = -55°C
35
30
25
20
17
175
150
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
VBEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.8
1.0
1.3
2.0 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
VCEsat3
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
0.5
1.0
1.5 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 100 mA,
f = 20 MHz 3 15
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 40
pF
Open Circuit Inpu t Capacitance CIBO VEB = 3 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 300
pF
Delay Time tdIC = 1.5 A, IB1 = 150 mA 15 ns
Rise Time trIC = 1.5 A, IB1 = 150 mA 30 ns
Switching Characteristics
Storage Time tsIC = 1.5 A, IB1=IB2 = 150 mA 55 ns
Fall Time tfIC = 1.5 A, IB1=IB2 = 150 mA 35 ns
