BCX 19, BCX 20 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN NPN Power dissipation - Verlustleistung Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Mae in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCX 19 BCX 20 Collector-Emitter-voltage B open VCE0 45 V 25 V Collector-Base-voltage E open VCB0 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (DC) IC 500 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1A Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V ICB0 - - 100 nA IE = 0, VCB = 20 V, Tj = 150/C ICB0 - - 5 :A IEB0 - - 100 nA - - 620 mV Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. - Kollektor-Sattigungsspg. 2) IC = 500 mA, IB = 50 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 54 01.11.2003 General Purpose Transistors BCX 19 , BCX 20 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 1 V, IC = 100 mA hFE 100 - 600 VCE = 1 V, IC = 300 mA hFE 70 - - VCE = 1 V, IC = 500 mA hFE 40 - - VBEon - - 1.2 V 100 MHz - - - 5 pF - Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 1 V, IC = 500 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft CCB0 RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 420 K/W 2) BCX 17, BCX 18 BCX 19 = U1 BCX 20 = U2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 55