VSMB2943RGX01, VSMB2943GX01
www.vishay.com Vishay Semiconductors
Rev. 1.6, 02-Dec-13 1Document Number: 83486
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB2943X01 series are infrared, 940 nm emitting diodes
in GaAlAs multi quantum well (MQW) technology with high
radiant power and high speed, molded in clear, untinted
plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• IR touch panels
•3D TV
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2xx3X01 and
VEMT2xx3X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
VSMB2943RGX01 VSMB2943GX01
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMB2943RGX01 20 ± 25 940 15
VSMB2943GX01 20 ± 25 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB2943RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMB2943GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature according figure 9, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W