EC3A04B3 - ON Semiconductor L.L.C.

EC3A04B

No. A0509-1/4

www.semiconductor-sanyo.com/network

Ordering number : ENA0509B

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

21209 MS IM TC-00001840 / 41608 TI IM TC-00001316 / 70407GB TI IM TC-00000742

SANYO Semiconductors

DATA SHEET

EC3A04B

N-Channel Junction Silicon FET

Low-Frequency General-Purpose Amplifier,

Impedance Converter Applications

Applicatins

•Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

Features

•Small IGSS.

•Small Ciss.

•Ultraminiature package facilitates miniaturization in end products.

•Halogen free compliance (UL94HB).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSX 30 V

Gate-to-Drain Voltage VGDS --30 V

Gate Current IG10 mA

Drain Current ID10 mA

Allowable Power Dissipation PD100 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10μA, VDS=0V --30 V

Gate-to-Source Leakage Current IGSS VGS=--20V, VDS=0V --1.0 nA

Cutoff Voltage VGS(off) VDS=10V, ID=1μA --0.18 --0.65 --2.2 V

Marking : KC Continued on next page.

EC3A04B

No. A0509-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Drain Current IDSS VDS=10V, VGS=0V 0.6* 3.0* mA

Forward T ransfer Admittance ⏐yfs⏐VDS=10V, VGS=0V, f=1kHz 3.0 5.0 mS

Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz 4 pF

Reverse T ransfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 1.1 pF

Static Drain-to-Source On-State Resistance

RDS(on) VDS=10mV, VGS=0V 200 Ω

* : The EC3A04B is classified by IDSS as follows : (unit : mA).

Rank 2 3

IDSS 0.6 to 1.5 1.2 to 3.0

Package Dimensions

unit : mm (typ)

7039A-004

Type No. Indication (Top view) Electrical Connection (Top view)

1 : Gate

2 : Source

3 : Drain

SANYO : ECSP1006-3

0.6

0.15

0.35

1.0

0.5

0.65

0.25

0.025

0.5

Polarity discriminating mark

Polarity mark (Top)

Source

Drain Gate

*Electrodes : Bottom

Polarity mark (Top)

SourceDrain

Gate

EC3A04B

No. A0509-3/4

IGDL

Cutoff Voltage, VGS(off)

-- V

VGS(off) -- IDSS

Drain Current, IDSS -- mA Drain Current, ID -- mA

Forward T ransfer Admittance, ⏐

fs⏐ -- mS

⏐

fs⏐ -- ID

Drain Current, IDSS -- mA

Forward T ransfer Admittance, ⏐

fs⏐ -- mS

⏐

fs⏐ -- IDSS

0 5 10 15 20 25

10p

100p

10n

100n

Drain-to-Source Voltage, VDS -- V

IGDL -- VDS

Gate-to-Drain Leak Current, IGDL -- A

ITR00640

ID=1mA

IT11453 IT11454

1.0 23 5

--1.0

VDS=10V

ID=1.0

IT11455

VDS=10V

VGS=0V

f=1kHz

53275 1.0

1.0

IDSS=2.0mA

3.0mA

1.0mA

VDS=10V

f=1kHz

0.1 5327532 1.0

1.0

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- mA

ITR00636

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- mA

--1.0--1.2 --0.8 --0.6 --0.4 --0.2 00

VDS=10V

Ta=--25

°C

25°C

°C

IT11452

--1.2 --1.0 --0.6--0.8 --0.4 --0.2 00

IDSS=

3.0mA

2.0mA

1.0mA

VDS=10V

ID -- VDS

Drain Current, ID -- mA

ID -- VDS

Drain-to-Source Voltage, VDS -- VDrain-to-Source Voltage, VDS -- V

IT11450

012345

0.5

1.0

1.5

2.0

3.0

2.5

VGS=0V

--0.1V

--0.2V

--0.3V

--0.4V

IT11451

0 5 10 15 20 3025

0.5

1.0

1.5

2.0

3.0

2.5

VGS=0V

--0.1V

--0.2V

--0.3V

--0.4V

EC3A04B

No. A0509-4/4

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,

without the prior written consent of SANYO Semiconductor Co.,Ltd.

0 20 40 60 80 100 120 140 160

100

120

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- mW

ITR00646

Drain-to-Source Voltage, VDS -- V

Ciss -- VDS

Input Capacitance, Ciss -- pF

Drain-to-Source Voltage, VDS -- V

Crss -- VDS

Output Capacitance, Crss -- pF

IT11456 IT11457

VGS=0V

f=1MHz

1.0 23 557710 23 5

1.0

VGS=0V

f=1MHz

1.0 23 557710 23 5

1.0

This catalog provides information as of February, 2009. Specifications and information herein are subject

to change without notice.