MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev. 1.0.0 1
February 2008
MMBT5770
NPN RF Transistor
• This device is designed for use as RF amplifiers, oscillat ors and multipliers with collector currents in the 1.0 mA to 30 mA range.
• Sourced from process 43.
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Thermal Characteristics Ta=25°C unless other wis e noted
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 4.5 V
ICCollector Current - Continuous 10 mA
TJ, TSTG Operating and Storage Junction Temperat ure Range -55 to +150 °C
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C225
1.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 556 °C/W
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 μA, IE = 0 30 V
VCEO(sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 3 V
ICBO Collector-Cutoff Current VCB = 15 V, IE = 0 50 nA
On Characteristics *
hFE DC Current Gain VCE = 1.0V, IC = 3.0mA 30
VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.4 V
VBE (sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 1.0 V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 4.0mA, VCE = 10V, f = 100MHz 600 MHz
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev. 1.0.0 2
Typical Characteristics
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev. 1.0.0 3
Typical Characteristics (continued)
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev. 1.0.0 4
Typical Characteristics (continued)
MMBT5770 — NPN RF Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev. 1.0.0 5
Typical Characteristics (continued)
MMBT5770 NPN RF TransistorMMBT5770
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT5770 Rev. 1.0.0 6
Rev. I31
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Definition of Terms
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Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design spe cifications for produc t development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary dat a will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without no tice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semic onductor. The datasheet is printed for reference infor-
mation only.
