2SJ668
2010-02-05
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS −60 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −60 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID −5 A
Drain current
Pulse (Note 1) IDP −20 A
Drain power dissipation (Tc=25°C) PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 40.5 mJ
Avalanche current IAR −5 A
Repetitive avalanche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W
Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω,
IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1 ± 0.2
0.1 ± 0.1
1.05 MAX.
2.3 ± 0.15
5.2 ± 0.2
0.8 MAX.
0.6 MAX.
9.5 ± 0.3
1.2 MAX.
1.5 ± 0.2
6.5 ± 0.2
1 2 3
0.6 MAX.
5.5 ± 0.2
0.6 ± 0.15
2.3 ± 0.2
2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
3
2
1
JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.35 g (typ.)
2SJ668
2010-02-05
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V — — ±10 μA
Drain cutoff current IDSS V
DS = −60 V, VGS = 0 V — — −100 μA
V (BR) DSS I
D = −10 mA, VGS = 0 V −60 — — V
Drain-source breakdown voltage
V (BR) DSX I
D = −10 mA, VGS = 20 V −35 — — V
Gate threshold voltage Vth V
DS = −10 V, ID = −1 mA −0.8 — −2.0 V
VGS = −4 V, ID = −2.5 A — 0.16 0.25
Drain-source ON-resistance RDS (ON)
VGS = −10 V, ID = −2.5 A — 0.12 0.17
Ω
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.5 5.0 — S
Input capacitance Ciss — 700 —
Reverse transfer capacitance Crss — 60 —
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
— 90 —
pF
Rise time tr — 14 —
Turn-on time ton — 24 —
Fall time tf — 14 —
Switching time
Turn-off time toff
— 95 —
ns
Total gate charge (gate-source
plus gate-drain) Qg — 15 —
Gate-source charge Qgs — 11 —
Gate-drain (“Miller”) charge Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
— 4 —
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — −5 A
Pulse drain reverse current
(Note 1)
IDRP — — — −20 A
Forward voltage (diode) VDSF I
DR = −5 A, VGS = 0 V — — 1.7 V
Reverse recovery time trr — 40 — ns
Reverse recovery charge Qrr
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A/μs — 32 — nC
Marking
Duty ≤ 1%, tw = 10 μs
−10 V
0 V
VGS
RL = 12 Ω
VDD ≈ −30 V
ID = −2.5 A
Output
4.7 Ω
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
J668
Lot No.
Note 4
Part No.
(or abbreviation code)
2SJ668
2010-02-05
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VDS – VGS
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
0
−2.0
−0.4
−1.2
−0.8
−1.6
−40 −20−8−12 −16
−
5
ID = −1.2 A
Common source
Tc= 25°C
Pulse test
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
0
−5
−1
−3
−2
−4
0 −0.4 −2.0−0.8 −1.2 −1.6
−10
−8
−6
−2.8
−3.5
−4.
VGS = −2.5V
Common source
Tc = 25°C
Pulse test
−3
ID – VGS
Drain current ID (A)
Gate-source voltage VGS (V)
0
−10
−2
−6
−8
−1 0 −5−3 −4
100
25
Tc = −55°C
Common source
VDS = −10 V
Pulse test
−4
−2
⎪Yfs⎪ − ID
Forward transfer admittance ⎪Yfs⎪ (S)
Drain current ID (A)
0.1
100
10
1
−0.1 −100−1
Common source
VDS = −10 V
Pulse test
Tc = −55°C
25
100
−10
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
0
−10
−2
−6
−4
−8
−20 −10−4−6 −8
−10
−8
−
6
−4
−3.5
−3
VGS = −2.5 V
Common source
Tc = 25°C
Pulse test
RDS (ON) − ID
Drain-source ON-resistance
RDS (ON) (Ω)
Drain current ID (A)
0
0.4
0.5
0 −2 −10
Common source
Tc = 25°C
Pulse test
−4
0.3
0.1
0.2
−6 −8
VGS = −10 V
−4 V
−2.5
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Vth − Tc
Gate threshold voltage Vth (V)
Case temperature Tc (°C)
0
−80 040 80 120 160−40
−2.0
−0.4
−1.2
−0.8
−1.6
Common source
VDS = −10 V
ID = 1 mA
Pulse test
Capacitance C (pF)
Capacitance – VDS
Drain-source voltage VDS (V)
10
100
1000
10000
−0.1 −1 −10 −100
Ciss
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
RDS (ON) − Tc
Drain−source ON-resistance
RDS (ON) (Ω)
Case temperature Tc (°C)
0
0.4
0.1
0.3
0.2
−40 −80 1600 40 120 80
Common source
Pulse test
ID = −5 A
−2.5
−1.2
VGS = −10 V
VGS = −4 V
−
5
−2.5
−1.2
IDR − VDS
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
0.1
10
0.201.2
0.6 0.4 0.8 1.0
Common source
Tc = 25°C
Pulse test
−10
−5
−3
−1 VGS = 0 V
1
Case temperature Tc (°C)
PD − Tc
Drain power dissipation PD (W)
40
10
20
30
0
0 80 20040 160 120
Total gate charge Qg (nC)
Drain-source voltage VDS (V)
Dynamic input/output
characteristics
Gate-source voltage VGS (V)
−50
−40
0
−30
−20
−10
0 25 30
10 5
−10
−5
−20
−25
0
−15
VGS
VDS
VDD = −48 V
−12V −24V
Common source
ID = −5 A
Ta = 25°C
Pulse test
20 15
2SJ668
2010-02-05
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rth − tw
Pulse width tw (s)
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
0.01
10 μ 100 μ 1 m 10 m 100 m 1 10
0.1
1
10
0.01
0.02
0.05
0.1
0.2
Duty = 0.5
Single Pulse
T
PDM
t
Duty = t/T
Rth (ch-c) = 6.25°C/W
Safe operating area
Drain-source voltage VDS (V)
Drain current ID (A)
ID max (continuous)
ID max (pulsed) *
DC operation
Tc = 25°C
1 ms * 100 μs *
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.1 −1 −10 −100
VDSS max
−1
−10
−100
−0.1
EAS – Tch
Channel temperature (initial) Tch (°C)
Avalanche energy EAS (mJ)
0
25
10
30
50
40
50 75 100 125 150
RG = 25 Ω
VDD = −25 V, L = 2.2 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
20
Waveform
IAR
BVDSS
VDD V
DS
Test circuit
−15 V
0 V
2SJ668
2010-02-05
6
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• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
