CDST193-G
RoHS Device
SMD Switching DiodeSMD Switching Diode
QW-B0028 Page 1
REV:A
Features
-Low forward voltage: VF=0.9V (Typ.)
-Fast reverse recovery time: trr=1.6nS (Typ.)
Polarity: 1. ANODE
2. N.C.
3. CATHODE
Marking: F3
Dimensions in inches and (millimeter)
Symbol
Parameter Value Unit
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Non-repetitive peak reverse voltage
DC blocking voltage
Forward continuous current
Average rectified output current
Power dissipation
Junction temperature
Storage temperature
VRM
VR
IFM
IO
PD
TJ
TSTG
85
80
300*
100*
150
125
-55 ~ +125
V
V
mA
mA
mW
OC
OC
SMD Diodes Specialist
COMCHIP
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.083(2.10)
0.066(1.70)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.006(0.15) max
0.007(0.20) min
*Unit rating. Total rating=Unit rating × 1.5
Symbol
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
V
V
IR=100μA
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=IR=10mA, Irr=0.1×IR
V(BR)R
VF1
VF2
VF3
IR1
IR2
CT
trr
80 V
1.2
0.1
0.5
3.0
4.0
V
V
V
V
μA
μA
pF
nS
Min
V
0.60
0.72
0.90
0.90
1.60
RATING AND CHARACTERISTIC CURVES (CDST193-G)
Page 2
QW-B0028
Fig.1 Forward Voltage Characteristics
10μ
IF, Forward Current (A)
VF, Forward Voltage (V)
0 0.6 1.2
Fig.2 Reverse Characteristics
1n
IR, Reverse Current (A)
VR, Reverse Voltage (V)
1 60
Fig.3 Capacitance Between Terminals
0
CT, Total Capacitance (pF)
VR, Reverse Voltage (V)
0.1
0.4
100
0.4 0.8
10m
1
20
10μ
Fig.4 Reverse Recovery Time Characteristics
0.1
trr, Reverse Recovery Time (nS)
IF, Forward Current (mA)
0.1 1.0
0.5
1.0
10 100
10
1.6
0.2 1.0
100μ
1m
100m
80
1μ
0.8
SMD Switching Diode
SMD Diodes Specialist
COMCHIP
REV:A
10n
100n
O
Ta=100 C
O
Ta=25 C
O
Ta=-25 C
40
O
Ta=25 C
O
Ta=50 C
O
Ta=75 C
O
Ta=125 C
1.2
1
f=1MHz
O
Ta=25 C
O
Ta=25 C
