DS30272 Rev. 2 - 2 1 of 3 MMBT4401T
MMBT4401T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available
(MMBT4403T)
·Ultra-Small Surface Mount Package
Characteristic Symbol MMBT4401T Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
D
B
N
C
H
K
G
TOP VIEW
C
E
B
Mechanical Data
·Case: SOT-523, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking (See Page 2): 2X
·Ordering & Date Code Information: See Page 2
·Weight: 0.002 grams (approx.)
TCUDORPWEN
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
E
B
C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30272 Rev. 2 - 2 2 of 3 MMBT4401T
TCUDORPWEN
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 60 ¾VIC= 100mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 100mA, IC = 0
Collector Cutoff Current ICEX ¾100 nA VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current IBL ¾100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
20
40
80
100
40
¾
¾
¾
300
¾
¾
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.40
0.75 VIC= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base- Emitter Saturation Voltage VBE(SAT) 0.75
¾
0.95
1.2 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ¾6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ¾30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500 ¾
Output Admittance hoe 1.0 30 mS
Current Gain-Bandwidth Product fT250 ¾MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td¾15 ns VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Rise Time tr¾20 ns
Storage Time ts¾225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾30 ns
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
MMBT4401T-7 SOT-523 3000/Tape & Reel
Ordering Information (Note 3)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
2X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2XYM
Marking Information
Year 2002 2003 2004 2005 2006 2007 2008 2009
Code NPRST U VW
DS30272 Rev. 2 - 2 3 of 3 MMBT4401T
TCUDORPWEN
1.0
5.0
20
10
30
0.1 101.0 50
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fi
g
. 2 Capacitances
(
T
y
pical
)
Cobo
Cibo
0
100
150
50
200
2
5
0
0100200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1, Power Deratin
g
Curve
(see Note 1)
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
.
0
I , BASE CURRENT (mA)
B
Fi
g
.3T
y
pical Collector Saturation Re
g
ion
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
