Semiconductor Group 1
BCX 41
BSS 64
NPN Silicon AF and Switching Transistor BCX 41
BSS 64
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCX 41
BSS 64 Q62702-C1659
Q62702-S535
EKs
AMs SOT-23
B E C
123
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 80 V
Collector-base voltage VCB0 120
Emitter-base voltage VEB0 5
Collector current IC800 mA
Peak collector current ICM 1A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS=79˚C Ptot 330 mW
Junction temperature Tj150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient 2) Rth JA ≤ 285 K/W
125
125
5
BSS 64 BCX 41
Junction - soldering point Rth JS ≤ 215
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
●High breakdown voltage
●Low collector-emitter saturation voltage
●Complementary types: BCX 42, BSS 63 (PNP)
5.91
Semiconductor Group 2
BCX 41
BSS 64
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. UnitValues
Parameter Symbol min. typ. max.
DC characteristics VCollector-emitter breakdown voltage
I
C = 10 mA BSS 64
BCX 41
V(BR)CE0 80
125 –
––
–
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 20 MHz fT– 100 –
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –12–
AC characteristics
Collector-base breakdown voltage1)
I
C = 100 µA BSS 64
BCX 41
V(BR)CB0 120
125 –
––
–
µACollector cutoff current
VCE = 100 V
TA = 85 ˚C BCX 41
TA = 125 ˚C BCX 41
ICE0
–
––
–10
75
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
nA
nA
µA
µA
Collector cutoff current
VCB = 80 V BSS 64
VCB = 100 V BCX 41
VCB = 80 V, TA = 150 ˚C BSS 64
VCB = 100 V, TA = 150 ˚C BCX 41
ICB0 –
–
–
–
–
–
–
–
100
100
20
20
–DC current gain1)
I
C = 100 µA, VCE = 1 V BCX 41
I
C = 1 mA, VCE = 1 V BSS 64
I
C = 4 mA, VCE = 1 V BSS 64
I
C = 10 mA, VCE = 1 V BSS 64
I
C = 20 mA, VCE = 1 V BSS 64
I
C = 100 mA, VCE = 1 V BCX 41
I
C = 200 mA, VCE = 1 V BCX 41
hFE 25
–
20
–
–
63
40
–
60
80
80
55
–
–
–
–
–
–
–
–
–VCollector-emitter saturation voltage1)
I
C = 300 mA, IB = 30 mA BCX 41
I
C = 4 mA, IB = 0.4 mA BSS 64
I
C = 50 mA, IB = 15 mA BSS 64
VCEsat –
–
–
–
–
–
0.9
0.7
3.0
Base-emitter saturation voltage1)
I
C = 300 mA, IB = 30 mA BCX 41 VBEsat – – 1.4
nAEmitter cutoff current
VEB = 4 V IEB0 – – 100
1) Pulse test: t≤ 300 µs, D = 2 %
Semiconductor Group 3
BCX 41
BSS 64
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Collector current IC=f(VBE)
VCE = 1 V
Transition frequency fT=f(Ic)
VCE = 5 V
Semiconductor Group 4
BCX 41
BSS 64
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 10
Collector cutoff current ICB0 = f (TA)
VCB =VCE max
Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 10
DC current gain hFE = f (IC)
VCE =1 V