PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 350 Volt VCEO
* Gain of 15 at IC=-100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -350 V
Collector-Emitter Voltage VCEO -350 V
Emitter-Base Voltage VEBO -5 V
Base Current IB-250 mA
Continuous Collector Current IC-500 mA
Power Dissipation at Tamb
= 25°C Ptot 680 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -350 V IC
=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -350 V IC
=-1mA, IB
=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5 V IE=-10µA, IC
=0
Collector Cut-Off Current ICBO -50 nA VCB
=-250V, IE=0
Emitter Cut-Off Current IEBO -50 nA VEB
=-4V, IC
=0
Collector-Emitter
Saturation Voltage
VCE(sat) -0.3
-0.35
-0.5
-1.0
V
V
V
V
IC
=-10mA, IB
=-1mA*
IC
=-20mA, IB
=-2mA*
IC
=-30mA, IB
=-3mA*
IC
=-50mA, IB
=-5mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.80
-0.85
-0.90
V
V
V
IC
=-10mA, IB
=-1mA*
IC
=-20mA, IB
=-2mA*
IC
=-30mA, IB
=-3mA*
Base-Emitter Turn-On
Voltage
VBE(on) -2.0 V IC=-100mA, VCE=-10V*
Static Forward Current
Transfer Ratio
hFE 20
30
30
20
15
200
200
IC
=-1mA, VCE=-10V
IC
=-10mA, VCE=-10V*
IC
=-30mA, VCE=-10V*
IC
=-50mA, VCE=-10V*
IC
=-100mA, VCE=-10V*
Transition Frequency fT40 MHz IC
=-10mA, VCE=-20V,
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6520
3-4
C
B
E
Not Recommended for New Design
Please Use FMMT558
