2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 3 Configuration * Military Qualified * * * * * Single TO-205AD (TO-39) BENEFITS * * * * * * S 1 2 Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage APPLICATIONS 3 G Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage * Hi-Rel Systems * Direct Logic-Level Interface: TTL/CMOS * Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. * Battery Operated Systems * Solid-State Relays D Top View ORDERING INFORMATION PART DESCRIPTION/DSCC PART NUMBER PACKAGE 2N6660 2N6660-2 2N6660JANTX VISHAY ORDERING PART NUMBER Commercial 2N6660 Commercial, Lead (Pb)-free 2N6660-E3 www.vishay.com/doc?67884 See -2 Flow Document 2N6660-2 JANTX2N6660 (std Au leads) 2N6660JTX02 TO-205AD (TO-39) 2N6660JANTXV JANTX2N6660 (with solder) 2N6660JTXL02 JANTX2N6660P (with PIND) 2N6660JTXP02 JANTXV2N6660 (std Au leads) 2N6660JTXV02 JANTXV2N6660P (with PIND) 2N6660JTVP02 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C) Pulsed Drain TC = 25 C TC = 100 C Currenta Maximum Power Dissipation ID IDM TC = 25 C TA = 25 C PD UNIT V 0.99 0.62 A 3 6.25 W 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg - 55 to 150 Operating Junction and Storage Temperature Range C/W C Notes a. Pulse width limited by maximum junction temperature. b. Not required by military spec. S11-1542-Rev. D, 01-Aug-11 1 Document Number: 70223 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix SPECIFICATIONS (TA = 25 C, unless otherwise noted) LIMITS PARAMETER MIN. TYP.a SYMBOL TEST CONDITIONS MAX. VDS VDS = 0 V, ID = 10 A 60 75 - VDS = VGS, ID = 1 mA 0.8 1.7 2 TC = - 55 C - - 2.5 TC = 125 C 0.3 - - - - 100 - - 500 - - 1 - - 100 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VGS(th) VDS = 0 V Gate-Body Leakage IGSS VGS = 20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V On-State Drain Current ID(on) VGS = 10 V VDS = 10 V - 2 - VGS = 5 V ID = 0.3 A - 2 5 ID = 1 A - 1.3 3 - 2.4 5.6 Drain-Source On-State Resistanceb RDS(on) TC = 125 C VDS = 48 V TC = 125 C VGS = 10 V TC = 125 C V nA A A Forward Transconductanceb gfs VDS = 7.5 V, ID = 0.525 A 170 350 - mS Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.7 0.8 1.6 V Dynamic Input Capacitance Ciss - 35 50 Output Capacitance Coss - 25 40 Reverse Transfer Capacitance Crss - 7 10 Drain-Source Capacitance Cds - 30 - - 8 10 - 8.5 10 VGS = 0 V VDS = 25 V, f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 ID 1 A, VGEN = 10 V, Rg = 25 ns Notes a. FOR DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 s duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1542-Rev. D, 01-Aug-11 2 Document Number: 70223 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2.0 100 VGS = 10 V 2.8 V 1.6 80 7V I D - Drain Current (mA) I D - Drain Current (A) VGS = 10 V 8V 6V 1.2 5V 0.8 4V 0.4 2.6 V 60 2.4 V 40 2.2 V 20 3V 2V 0 0 1 2 3 4 1.8 V 2.0 V 0 0 5 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 1.0 2.8 TJ = - 55 C 25 C 2.4 VDS = 15 V R DS(on) - On-Resistance () I D - Drain Current (A) 0.8 125 C 0.6 0.4 0.2 1.0 A 0.5 A 2.0 1.6 1.2 0.8 ID = 0.1 A 0.4 0 0 0 4 2 6 8 0 10 VGS - Gate-Source Voltage (V) R DS(on) - Drain-Source On-Resistance (Normalized) R DS(on) - Drain-Source On-Resistance () 2.0 VGS = 10 V 1.0 0.5 0 0.4 0.8 1.2 1.6 16 20 2.25 VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 - 50 2.0 - 10 30 70 110 150 TJ - Junction Temperature (C) I D - Drain Current (A) On-Resistance vs. Drain Current S11-1542-Rev. D, 01-Aug-11 12 On-Resistance vs. Gate-to-Source Voltage 2.5 0 8 VGS - Gate-Source Voltage (V) Transfer Characteristics 1.5 4 Normalized On-Resistance vs. Junction Temperature 3 Document Number: 70223 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 120 VGS = 0 V VDS = 5 V f = 1 MHz 100 C - Capacitance (pF) I D - Drain Current (mA) TJ = 150 C 1 25 C 0.1 80 60 40 C iss C oss 20 C rss 125 C - 55 C 0.01 0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) 0 10 20 Threshold Region 40 50 Capacitance 100 15.0 I D = 1.0 A 50 12.5 VDS = 30 V 10.0 t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) 30 VDS - Drain-to-Source Voltage (V) 48 V 7.5 5.0 2.5 V DD = 25 V Rg = 25 V GS = 0 V to 10 V 20 10 td(off) 5 tr td(on) tf 2 1 0.1 0 0 100 200 300 400 500 600 Q g - Total Gate Charge (pC) Gate Charge 1 I D - Drain Current (A) 10 Load Condition Effects on Switching 1.0 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 Single Pulse 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJC = 20 C/W 0.02 0.01 3. TJM - TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 1K 10 K t1 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70223. S11-1542-Rev. D, 01-Aug-11 4 Document Number: 70223 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-205AD (TO-39 TALL LID) CD INCHES P Q Dim CD CH HD LC LD LL LU L1 L2 P Q r TL TW m CH L1 LU L2 LL Seating Plane MILLIMETERS Min Max Min Max 0.305 0.335 7.75 8.51 0.240 0.260 6.10 6.60 0.335 0.370 8.51 0.200 TP Notes 9.40 5.08 TP 6 0.016 0.021 0.41 0.53 7, 8 0.500 0.750 12.70 19.05 7, 8 0.016 0.019 0.41 0.48 7, 8 -- 0.050 -- 1.27 7, 8 0.250 -- 6.35 -- 7, 8 0.100 -- 2.54 -- 5 -- 0.050 -- 1.27 4 -- 0.010 -- 0.25 9 0.029 0.045 0.74 1.14 3 0.028 0.034 0.71 0.86 2 45_ TP 45_ TP 6 Dimensions (see notes 1, 2, 9, 11, 12) ECN: S-40373--Rev. C, 15-Mar-04 DWG: 5511 LD NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only. HD 2. 1 2 CL TW 3 r TL LC Document Number: 71367 09-Mar-04 Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm). 3. Dimension TL measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at guage plane 0.054+0.001, -0.000 (1.37+0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1 and L2, LD applies between L2 and L maximum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000