IRFF9230 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0

ID @ VGS = -10V, TC = 100°C Continuous Drain Current -2.4

IDM Pulsed Drain Current ➀-16

PD @ TC = 25°C Max. Power Dissipation 25 W

Linear Derating Factor 0.20 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy ➁75 mJ

IAR A valanche Current ➀—A

EAR Repetitive Avalanche Energy ➀—mJ

dv/dt Peak Diode Recovery dv/dt ➂-5.0 V/ns

TJOperating Junction -55 to 150

TSTG Storage T emperature Range

Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)

Weight 0.98(typical) g

PD - 90551D

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

04/20/01

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TO-39

Product Summary

Part Number BVDSS RDS(on) I D

IRFF9230 -200V 0.80Ω -4.0A

Features:

nRepetitive Avalanche Ratings

nDynamic dv/dt Rating

nHermetically Sealed

nSimple Drive Requirements

nEase of Paralleling

For footnotes refer to the last page

JANTX2N6851

REPETITIVE AVALANCHE AND dv/dt RATED

JANTXV2N6851

HEXFETTRANSISTORS JANS2N6851

THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564

200V, P-CHANNEL

IRFF9230

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Thermal Resistance

Parameter Min Typ Max Units T est Conditions

RthJC Junction-to-Case — — 5.0

RthJA Junction-to-Ambient — — 175 Typical sock et mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units T est Conditions

ISContinuous Source Current (Body Diode) — — -4.0

ISM Pulse Source Current (Body Diode) ➀— — -20

VSD Diode F orward V oltage — — -6.0 V T j = 25°C, IS =-4.0A, VGS = 0V ➃

trr Reverse Recovery Time — — 400 nS Tj = 25°C, IF = -4.0A, di/dt ≤ -100A/µs

QRR Reverse Recovery Charge — — 4.0 µ C VDD ≤ -50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter M in Typ Max Un its T e st Conditions

BVDSS Drain-to-Source Breakdown V oltage -200 — — V VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — - 0.22 — V/°C R efe ren ce t o 25°C, ID = -1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.80 VGS = -10V, ID = -2.4A ➃

Resistance — — 1.68 VGS =-10V, ID =-4.0A ➃

VGS(th) Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 2.2 — — S ( ) V

DS > -15V, IDS = -2.4A ➃

IDSS Zero Gate V oltage Dr ain Current — — -25 VDS= -160V, VGS=0V

— — -250 µA VDS = -160V

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V

IGSS Gate-to-Source Leakage Reverse — — 100 nA VGS = 20V

QgT otal Gate Charge 14.7 — 34.8 VGS =-10V, ID = -4.0A

Qgs Gate-to-Source Charge 0.8 — 7.0 nC VDS= -100V

Qgd Gate-to-Drain (‘Miller’) Charge 5.0 — 17

td(on) Turn-On Delay Time — — 50 VDD = -100V, ID = -4.0A,

trRise Time — — 100 VGS =-10V,RG =7.5Ω

td(off) Turn-Off Delay Time — — 100

tfFall Time — — 80

LS + LDTotal Inductance — 7.0 —

Ciss Input Capacitance — 700 VGS = 0V, VDS = -25V

Coss Output Capacitance — 200 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 40 —

Ω

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

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IRFF9230

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

IRFF9230

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

13 a& b

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IRFF9230

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

RGD.U.T.

90%

10%

d(on)

d(off)

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Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tpV

(

)

DSS

0.01

Ω

D.U.T

DRIVER A

15V

-20V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Charge

-10V

D.U.T. VDS

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

-12V

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IRFF9230

Foot Notes: ➂ ISD ≤ -4.0A, di/dt ≤ -120A/µs,

VDD≤ -200V, TJ ≤ 150°C

Suggested RG = 7.5 Ω

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = -50V, starting TJ = 25°C,

Peak IL = -4.0A,VGS =-10V

Case Outline and Dimensions —TO-205AF

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

LEGEND

1- SOURCE

2- GATE

3- DRAIN

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/01