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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range Value Units 30 25 35 30 4.5 V V V V V 100 mA -55 to +150 C 2N5088 2N5089 2N5088 2N5089 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max Units 2N5088 2N5089 625 5.0 83.3 *MMBT5088 *MMBT5089 350 2.8 200 357 mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units 50 50 50 100 V V V V nA nA nA nA OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 20 V, IE = 0 VCB = 15 V, IE = 0 VEB = 3.0 V, IC = 0 VEB = 4.5 V, IC = 0 IC = 100 A, IE = 0 5088 5089 5088 5089 5088 5089 30 25 35 30 5088 5089 5088 5089 5088 5089 300 400 350 450 300 400 ON CHARACTERISTICS hFE DC Current Gain IC = 100 A, VCE = 5.0 V IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* 900 1200 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance IC = 500 A,VCE = 5.0 mA, f = 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz hfe Small-Signal Current Gain NF Noise Figure IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 100 A, VCE = 5.0 V, RS = 10 k, f = 10 Hz to 15.7 kHz 5088 5089 5088 5089 50 350 450 MHz 4.0 pF 10 pF 1400 1800 3.0 2.0 dB dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) 3 (continued) V CE = 5.0 V 125 C 1000 800 600 25 C 400 - 40 C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C 0.8 0.6 25 C 125 C 0.4 = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) 1200 Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 = 10 0.2 125 C 0.15 25 C 0.1 - 40 C 0.05 VBEON- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 10 VCB = 45V 1 0.1 25 100 Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( C) 150 40 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 5 CAPACITANCE (pF) f = 1.0 MHz 4 3 C te 2 C ob 1 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 175 MHz 7 5 150 MHz 3 2 125 MHz 100 MHz 75 MHz 1 0.1 Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 5 V CE = 5.0 V 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( C) 4 BANDWIDTH = 15.7 kHz I C = 30 A 2 1 I C = 10 A 0 150 1,000 P D - POWER DISSIPATION (mW) I C = 1.0 mA, R S = 500 I C = 1.0 mA, R S = 5.0 k 2 V CE = 5.0V 0 0.0001 0.01 0.1 1 f - FREQUENCY (MHz) 20,000 50,000 100,000 TO-92 500 10 100 SOT-23 375 250 125 0 0.001 10,000 625 I C = 100 A, R S = 10 k 4 5,000 Power Dissipation vs Ambient Temperature I C = 200 A, R S = 10 k 6 2,000 R S - SOURCE RESISTANCE ( ) 10 8 3 I C = 100 A 3 Noise Figure vs Frequency NF - NOISE FIGURE (dB) 1 10 I C - COLLECTOR CURRENT (mA) Wideband Noise Frequency vs Source Resistance NF - NOISE FIGURE (dB) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C 0 10 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier 0 25 50 75 100 TEMPERATURE ( o C) 125 150 (continued) Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure 10,000 R S - SOURCE RESISTANCE ( ) R S - SOURCE RESISTANCE ( ) Contours of Constant Narrow Band Noise Figure 3.0 dB 5,000 4.0 dB 2,000 6.0 dB 1,000 8.0 dB 500 V CE = 5.0 V 10 dB f = 100 Hz BANDWIDTH = 20 Hz 200 12 dB 14 dB 100 1 10,000 5,000 2.0 dB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz 200 1 1,000 10000 1.0 dB 2.0 dB 3.0 dB 1000 4.0 dB 500 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz 200 100 1 6.0 dB 10 100 I C - COLLECTOR CURRENT ( A) 10 100 I C- COLLECTOR CURRENT ( A) 1,000 Contours of Constant Narrow Band Noise Figure 8.0 dB 1000 R S - SOURCE RESISTANCE ( ) R S - SOURCE RESISTANCE ( ) Contours of Constant Narrow Band Noise Figure 2000 8.0 dB 100 10 100 I C - COLLECTOR CURRENT ( A) 5000 6.0 dB 10000 5000 2000 1000 2.0 dB 3.0 dB VCE = 4.0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( A) 500 5.0 dB 6.0 dB 10 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics h fe 1.3 h ie h oe 1.2 h re 1.1 h oe h re 1 h ie 0.9 0.8 I C = 1.0mA f = 1.0kHz T A = 25C h fe 0 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25 Typical Common Emitter Characteristics CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25C) 1.4 1.5 1.4 1.3 1.2 h ie VCE = 5.0V f = 1.0kHz I C = 1.0mA h re h fe h oe 1.1 1 0.9 0.8 h oe 0.7 h fe 0.6 h re 0.5 -100 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE ( C) Typical Common Emitter Characteristics CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) CHAR ACTER ISTI CS RELATI VE TO VALUE(VCE =5V) Typical Common Emitter Characteristics (f = 1.0 kHz) 150 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier 100 f = 1.0kHz h oe 10 h ie and h re h re 3 1 h oe h fe h ie 0.1 0.01 0.1 0.2 h fe 0.5 1 2 5 10 20 I C - 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