Photodiode Arrays/Linear Image Sensors ( 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES - For various measuring purpose This photodiode consists of 16 elements of Silicon Photodiode having active area of 1.175mm (width) X 2.0mm (height) with 1.575mm pitch. This diode is specially designed for continued linear channel with the same pitch. The substrate is designed 25.4mm length. Also $5668 with the Csl (TI) crystal mounted is available for X-ray detection application upon request. (35, 38 and 46-ELEMENT PHOTODIODE ARRAYS For multichannel spectrophotometry These linear photodiode arrays are developed for low-light-level detection specifically for use in spectrophotometry. Packaged in ceramic DIPs (dual in- line packages) with a quartz window, they cover a wide spectral response range from the UV through near infrared region. They also feature low cross-talk between elements, thus high precision measurement can be performed without degrading the signal purity. Each series is available in 35, 38 and 46 element linear arrays, with element dimensions of 0.9%4.4mm and an element pitch of 1.0mm. $4111 Series High IR sensitivity, low dark current Low dark current, suppressed IR With reverse bias | sensitivity $4112 Series applied Low juncti it d Types having the window coated with a special film and the C2334 _ $4113 Series | (Charge integration | R sensitivity capaciiance, suppresse series driver/amplifier circuit are also provided. _| readout) fo $4114 Series Low junction capacitance, high-speed response (16x 16 (256) ELEMENT PIN SILICON PHOTODIODE ARRAY $3805, $4529 256ch parallel readout allows high-speed 2-D photometry The 16 X 16(256) element PIN photodiode arrays are developed specifically for high-speed 2-D photometry. The whole chip is mounted on an easy-to-use PC board. The output of each photodiode can be read out in parallel or at random, thus enabling high-speed 2-D photometry. The $3805 (element pitch:1.5mm) and $4529 (1.1mm) are available. (per Range Wave- - element) A length Ap a (mm) (nm) _ {nm) ( $3805 |1.3X1.3 100 @ @ 320 to 1000 800 0.5 0.1 [-__ S $4529 10.95X0.95 120(_N-MOS LINEAR IMAGE SENSORS Self-scanning photodiode arrays with large active areas The N-MOS linear image sensor is a self-scanning photodiode array designed specifically for detectors in multichannel spectroscopy. The scanning circuit is constructed with N-channel MOS transistors which operate from a low voltage supply at lower power consumption, allowing simple handling and use. The N- MOS linear image sensors also feature large active areas, high UV sensitivity and exceptionally low noise that achieve a high S/N tatio even in low-light-level detection. Major families of N-MOS linear image sensors are listed below. Type No. of Photodiodes Features Current Output Type | 128, 256, 512, 1024 | Low power consumption Voltage Output Type | 128, 256,512, 1024 | Boxcar output waveform Dual Type for Dual image sensors Double Beam 256,512 arranged on a single chip Peltier element, thermistor TE-cooled Type | 512,1024 and sensor chip integrated in the same package. High sensitivity in the IR IR-enhanced Type | 126,256, 512, 1024) ong soft X-ray regions ( RELATED PRODUCTS FOR N-MOS LINEAR IMAGE SENSORS Hamamatsu provides driver/amplifier circuits and pulse generators optimized for use with N-MOS linear image sensors. There are various types of driver/amplifier circuits according to each family of N-MOS linear image sensor. Each type is mounted on a compact PC board which permits easy optical alignment and cooling for the image sensor. Hamamatsu also provides multichannel detector heads which incorporate a driver/amplifier circuit into a compact housing. The housing is designed for ease of use. It is equipped with a flange for connection to a monochromator, adjustment function for optical axis alignment and an efficient cooling module. 404350, C4351 N-MOS multichannel detector heads 47