AMMC-6140 20 - 40 GHz Output x2 Active Frequency Multiplier Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1300 x 900 m (51 x 35 mils) 10 m (0.4 mils) 100 10 m (4 0.4 mils) 120 x 80 m (5x3 0.4 mils) Description Features Avago's AMMC-6140 is an easyto-use x2 active frequency multiplier MMIC designed for commercial communication systems. The MMIC takes a 10 to 20 GHz input signal and doubles it to 20 to 40 GHz. It could also be used between 9-10 GHz and 20-22 GHz with slight degradation in Conversion Loss or Fundamental Suppression. It has an integrated matching, harmonic suppression, and bias network. The input/output are matched to 50 and fully DC blocked. The MMIC is fabricated using PHEMT technology. The backside of this die is both RF and DC ground. This helps simplify the assembly process and reduces assembly-related performance variations and costs. For improved reliability and moisture protection, the die is passivated at the active areas. This MMIC is a cost effective alternative to bulky hybrid FET and diode doublers that require high input drive levels, have high conversion loss and poor fundamental suppression. * Input frequency range: 10-20 GHz * Broad input power range: -9 to +7 dBm * Output power: -1 to 0 dBm (Pin = +4dB) * Fundamental suppression of 25 dBc * 50 input and output match * Supply bias of -1.2V, 4.5V and 27 mA Applications * Microwave radio systems * Satellite VSAT, DBS Up/Down Link * LMDS & Pt-Pt mmW Long Haul * Broadband Wireless Access (including 802.16 and 802.20 WiMax) * WLL and MMDS loops Absolute Maximum Ratings [1] Symbol Parameters/Conditions Units Min. Vd Positive Drain Voltage V 7 Vg Gate Supply Voltage V 0.5 Id Drain Current mA -3 Pin CW Input Power dBm 15 Tch Operating Channel Temperature C +150 Tstg Storage Case Temperature C +150 Tmax Maximum Assembly Temp (60 sec max) C -3.0 -65 Max. +300 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. AMMC-6140 DC Specifications/Physical Properties[1] Symbol Parameters and Test Conditions Units Id Drain Supply Current (under any RF power drive and temperature) (Vd = 4.5V) Vg Typ. Max. mA 27 40 Gate Supply Operating Voltage V -1.2 -1.0 ch-b Thermal Resistance (Backside Temp. Tb = 25C) C/W [2] Min. -1.5 25 Notes: 1. Ambient operational temperature TA= 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (ch-b) = 26C/W at Tchannel (Tc) = 34C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. RF Specifications[3, 4, 5] (TA = 25C, Vd = 4.5 V, Id(Q)= 27 mA, Z0 = 50) Symbol Parameters and Test Conditions Units Fin Input Frequency GHz Fout Output Frequency GHz 20 to 40 Po Output Power[6] dBm -2 -1 0.4 Fo Fundamental Isolation (referenced to Po): 20 - 36 GHz 36-40 GHz dBc dBc 20 14 30 16 5.0 1.0 3Fo 3rd Harmonic Isolation (referenced to Po) dBc 25 1.2 P-1dB Output Power at 1dB Gain Compression dBm +5 RLin Input Return Loss dB -15 RLout Output Return Loss dB -10 SSB Single Sideband Phase Noise (100 KHz offset) dBc/Hz -135 [6] [6] Minimum Typical Sigma 10 to 20 Notes: 3. Small/large signal data measured in wafer form TA = 25C. 4. 100% on-wafer RF test is done at Pin = +4 dBm and output frequency = 20, 28, 36 and 40 GHz. 5. Specifications are derived from measurements in a 50 test environment. Aspects of the multiplier performance may be improved over a narrower bandwidth by application of additional matching. Typical distribution of Pout, 2nd Harmonic and 3rd Harmonic Suppression (Fin=14 GHz). Based on 2500 parts sampled over several production lots. h hh -2 2Fo Pout (dBm) @ 28G Hz -1 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Fo Suppression (dBm) @ 14 GHz hh 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 3Fo Suppression (dBm) @ 42 GHz AMMC-6140 Typical Performances (TA = 25C, Vd =4 .5V, ID = 27 mA, Vg = -1.2V, Zin = Zout = 50 unless otherwise stated) NOTE: These measurements are in a 50 test environment. Aspects of the multiplier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5 2 0 0 -5 -15 -20 -25 -2 -4 -6 -30 -35 Pin=-2 dBm Pin=0 dBm Pin=+2 dBm Pin=+4 dBm Pin=+5 dBm -8 -40 -45 16 20 24 28 32 36 40 -10 16 44 20 OUTPUT FREQUENCY (GHz) Pout (dBm) Pout (dBm) 2H=22 GHz 3H 4H Fin -25 40 -30 44 5 -5 -5 -15 2H=30 GHz 3H Fin -25 -45 -45 -3 -1 1 3 -55 -11 5 -9 -7 -3 -1 1 3 -55 -11 5 0 0 -5 -15 -20 Pouy (dBm) 2H (@-40C) 2H (@+25C 2H (@+85C 1H (@-40C) 1H (@+25C 1H (@+85C) -30 -35 -35 28 32 36 40 44 OUTPUT FREQUENCY (GHz) Figure 7. Typical Output Power and Fundamental Suppression vs. Temperature. 2H (@4.0V) 2H (@4.5V) 2H (@5.0V) 1H (@4.0V) 1H (@4.5V) 1H (@5.0V) -20 -25 24 -7 -40 16 -5 -3 -1 1 3 5 0 -15 -30 20 -9 10 -10 -25 44 Figure 6. Typical Output Power against Fundamental vs. Pin (2H=38 GHz). 5 -5 36 Pin (dBm) Figure 5. Typical Output Power against Fundamental and 3rd Harmonic vs. Pin (2H=30 GHz). 5 -40 16 -5 28 2H=38 GHz Fin Pin (dBm) Figure 4. Typical Output Power against Fundamental 3rd and 4th Harmonic suppression vs. Pin (2H=22 GHz). -10 20 -25 -45 -5 12 -15 -35 -7 4 Figure 3. Typical Input & Output Return Loss. -35 -9 S11 S22 FREQUENCY (GHz) 5 Pin (dBm) Pout (dBm) 36 -20 -35 -55 -11 32 Figure 2. Typical Output Power at different Fundamental Input Power vs. Frequency. 5 -15 28 -15 OUTPUT FREQUENCY (GHz) Figure 1. Typical Output Power against Fundamental, 3rd, and 4th Harmonic suppression (Pin=3 dBm) vs. Frequency. -5 24 -10 -25 Pout (dBm) Pout (dBm) -10 Pout (dBm) O/P Freq=2*Fin Fundamental 3H 4H Pout (dBm) -5 RETURN LOSS (dB) 0 -10 2H (@Vg=-1.0) 2H (@Vg=-1.2) 2H (@Vg=-1.4) 1H (@Vg=-1.0) 1H (@Vg=-1.2) 1H (@Vg=-1.4) -20 -30 -40 20 24 28 32 36 OUTPUT FREQUENCY (GHz) Figure 8. Typical Output Power and Fundamental Suppression vs. Vdd. 40 44 -50 -11 -9 -7 -5 -3 -1 1 3 Pin (dBm) Figure 9. Typical Pout and Fundamental Suppression vs. Vg (Fout=38 GHz). 5 Biasing and Operation M/N @ fo Assembly Techniques S M/N @ 2fo A. Diff. Amp Active Balun The frequency doubler MMIC consists of a differential amplifier circuit that acts as an active balun. The outputs of this balun feed the gates of balanced FETs and the drains are connected to form the single-ended output. This results in the fundamental frequency and odd harmonics canceling and the even harmonic drain currents (in phase) adding in superposition. Node `S' acts as a virtual ground. An input matching network (M/N) is designed to provide good match at fundamental frequencies and produces high impedance mismatch at higher harmonics. AMMC-6140 is biased with a single positive drain supply and single negative gate supply using separate bypass capacitors. It is normally biased with the drain supply connected to the VDD bond pad and the gate supply connected to the Vgg bond pad. It is important to have the 100 pF bypass capacitor and it should be placed as close to the die as possible. Typical bias connections are shown in Figure 12. For most of the application it is recommended to use a Vg= -1.2V and Vd=4.5V. The AMMC-6140 performance changes very slightly with Drain (Vd) and Gate bias (Vg) as shown in Figures 8 and 9. Minor improvements in performance are possible for output power or fundamental suppression by optimizing the Vg from -1.0V to -1.4V and/or Vd from 4.0 to 5.0V. The RF input and output ports are AC coupled, thus no DC voltage is present at either port. However, the RF output port has an internal output matching circuit that presents a DC short. Proper care should be taken while biasing a sequential circuit to the AMMC-6140 as it might cause a DC short (Use a DC block if sub sequential circuit is not AC coupled). No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. Refer to the Absolute Maximum Ratings table for allowed DC and thermal conditions. The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy[1,2]. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plate metal shim (same length and width as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 12. Note that all the RF input and output ports are in a Ground-Signal-Ground configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally sufficient for signal connections, however double bonding with 0.7 mil gold wire or use of gold mesh is recommended for best performance, especially near the high end of the frequency band. Thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly 55 dB for a duration of 76 8 mS. The guided wedge at an untrasonic power level of 64 dB can be used for 0.7 mil wire. The recommended wire bond stage temperature is 150 2C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 100 m thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). This MMIC is also static sensitive and ESD precautions should be taken. Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Eutectic attach is not recommended and may jeopardize reliability of the device RFout RFin Figure 10. AMMC-6140 simplified schematic. 1090 650 0 Vdd Vgg 900 620 RFI 395 RFO 0 (Dimensions in m) 0 Figure 11. AMMC-6140 Bonding Pad Locations. 1300 Vg Vd 100 pF Vd Vg 50 ohm RFI 50 ohm RF Figure 12. AMMC-6140 Assembly Diagram. Note: 0.1uF capacitors on gate and drain lines, not shown, required. Ordering Information AMMC-6140-W10 = 10 devices per tray AMMC-6140-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright (c) 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-3946EN AV02-0701EN - June 23, 2008