FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Formerly available as type TA17696. SCREENING LEVEL 4487.3 Features * 12A, 100V, rDS(ON) = 0.170 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Current - 1.5nA Per-RAD(Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging S PART NUMBER/BRAND 10K Commercial FSS13A0D1 10K TXV FSS13A0D3 100K Commercial FSS13A0R1 100K TXV FSS13A0R3 100K Space FSS13A0R4 (c)2001 Fairchild Semiconductor Corporation File Number TO-257AA Ordering Information RAD LEVEL June 2000 D G CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID FSS13A0D, FSS13A0R 100 100 UNITS V V 12 A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 9 36 20 A A V 56 W TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 22 0.45 36 12 36 W W/ oC A A A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) -55 to 150 300 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(TH) IDSS Gate to Source Leakage Current IGSS Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance Turn-On Delay Time rDS(ON)12 VGS = VDS, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TYP MAX UNITS 100 - - V - - 5.0 V 1.5 - 4.0 V 0.5 - - V - - 25 A - - 250 A - - 100 nA nA - - 200 - - 2.32 V TC = 25oC - 0.100 0.170 TC = 125oC - - 0.289 VGS = 12V, ID = 12A ID = 9A, VGS = 12V MIN VDD = 50V, ID = 12A, RL = 4.17, VGS = 12V, RGS = 7.5 - - 20 ns - - 75 ns - - 45 ns - - 25 ns Qg(TOT) VGS = 0V to 20V - - 61 nC Gate Charge at 12V Qg(12) VGS = 0V to 12V - 35 42 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V Rise Time Turn-Off Delay Time Fall Time Total Gate Charge td(ON) TEST CONDITIONS ID = 1mA, VGS = 0V tr td(OFF) tf VDD = 50V, ID = 12A - - - nC Gate Charge Source Qgs - 6.8 8.3 nC Gate Charge Drain Qgd - 20 22 nC Plateau Voltage V(PLATEAU) Input Capacitance CISS Output Capacitance COSS ID = 12A, VDS = 15V - 8 - V VDS = 25V, VGS = 0V, f = 1MHz - 760 - pF - 310 - pF Reverse Transfer Capacitance CRSS - 110 - pF Thermal Resistance Junction to Case RJC - - 2.2 oC/W Thermal Resistance Junction to Ambient RJA - - 60 oC/W (c)2001 Fairchild Semiconductor Corporation FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time TEST CONDITIONS MIN TYP 0.6 - 1.8 V - - 280 ns ISD = 12A ISD = 12A, dISD/dt = 100A/s trr Electrical Specifications up to 100K RAD MAX UNITS TC = 25oC, Unless Otherwise Specified MIN MAX Drain to Source Breakdown Volts PARAMETER (Note 3) SYMBOL BVDSS VGS = 0, ID = 1mA TEST CONDITIONS 100 - UNITS V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = 20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 80V - 25 A Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 12A - 2.32 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 9A - 0.170 NOTES: 1. Pulse test, 300s Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE () APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 -20 100 Br 37 36 -10 100 Br 37 36 -15 80 Br 37 36 -20 50 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified LET = 26MeV/mg/cm2, RANGE = 43 LET = 37MeV/mg/cm2, RANGE = 36 1E-3 LIMITING INDUCTANCE (HENRY) 120 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 100 VDS (V) 80 60 40 20 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 TEMP = 25oC 0 0 -5 -10 -15 -20 -25 VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA (c)2001 Fairchild Semiconductor Corporation 1E-7 10 30 100 300 1000 DRAIN SUPPLY (V) FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R Typical Performance Curves Unless Otherwise Specified 16 (Continued) 100 TC = 25oC ID , DRAIN CURRENT (A) 14 ID , DRAIN (A) 12 10 8 6 4 100ms 10 1ms 10ms 1 100ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 2 0 -50 0 50 100 0.1 150 1 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 300 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) TC , CASE TEMPERATURE (oC) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = 12V, ID = 9A NORMALIZED rDS(ON) 2.0 QG 12V QGS QGD VG 1.5 1.0 0.5 0.0 -80 CHARGE -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) NORMALIZED THERMAL RESPONSE (ZJC) FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 101 100 0.5 10-1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-3 -5 10 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 t1 100 t2 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE (c)2001 Fairchild Semiconductor Corporation FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R Typical Performance Curves Unless Otherwise Specified (Continued) IAS , AVALANCHE CURRENT (A) 5 STARTING TJ = 25oC 10 STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD 50V-150V DUT tP VDD + 50 VGS 20V 0V VDS IAS 50 tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = 20V 20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value 25 (Note 7) A Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID 20% (Note 8) Gate Threshold Voltage VGS(TH) ID = 1.0mA 20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = 30V, t = 250s VGS = 30V, t = 250s Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA IAS TEST CONDITIONS MAX UNITS VDS = 80V, t = 10ms 1.6 A VGS(PEAK) = 15V, L = 0.1mH 36 A Thermal Response VSD tH = 100ms; VH = 25V; IH = 1A 85 mV Thermal Impedance VSD tH = 500ms; VH = 25V; IH = 1A 125 mV (c)2001 Fairchild Semiconductor Corporation FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD "S" EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. "S" EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D (c)2001 Fairchild Semiconductor Corporation - Attributes Data Sheet - Pre and Post Radiation Data FSS13A0D, FSS13A0R Rev. A FSS13A0D, FSS13A0R TO-257AA 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE A OP E INCHES A1 Q H1 D SYMBOL MIN MAX MIN MAX NOTES A 0.190 0.200 4.83 5.08 - A1 0.035 0.045 0.89 1.14 2, 3 Ob 0.025 0.035 0.64 0.88 Ob1 0.060 0.090 1.53 2.28 - D 0.645 0.665 16.39 16.89 - E 0.410 0.420 10.42 10.66 e 0.065 R TYP. L1 e1 Ob1 H1 L Ob 1 2 3 e e1 J1 MILLIMETERS 0.100 TYP 0.200 BSC 0.230 0.250 - 2.54 TYP 4 5.08 BSC 4 5.85 6.35 - J1 0.110 0.130 2.80 3.30 4 L 0.600 0.650 15.24 16.51 - L1 - 0.035 - 0.88 - OP 0.140 0.150 3.56 3.81 - Q 0.113 0.133 2.88 3.37 - NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-257AA dated 9-88. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.150 inches (3.81mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its' compounds. (c)2001 Fairchild Semiconductor Corporation FSS13A0D, FSS13A0R Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H