MCC26-14io1B Thyristor Module VRRM = 2x 1400 V I TAV = 27 A VT = 1.27 V Phase leg Part number MCC26-14io1B Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC26-14io1B Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1400 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 100 A 3 mA TVJ = 25C 1.27 V 1.64 V 1.27 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 85 C RthCH max. Unit 1500 V VR/D = 1400 V average forward current Ptot typ. VR/D = 1400 V I TAV It min. 1.65 V T VJ = 125 C 27 A 42 A TVJ = 125 C 0.85 V 11 m 0.88 K/W 0.2 K/W TC = 25C 115 W t = 10 ms; (50 Hz), sine TVJ = 45C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 125 C 440 A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A t = 10 ms; (50 Hz), sine TVJ = 45C 1.35 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kAs t = 10 ms; (50 Hz), sine TVJ = 125 C 970 As 940 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 22 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0.45 A/s; 45 A I G = 0.45 A; V = VDRM 27 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 125C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 450 mA non-repet., I T = 150 A/s 500 A/s 1000 V/s TVJ = 125C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s 1.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 20A; V = VDRM TVJ =100 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC26-14io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 C -40 100 C 125 C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCC26-14io1B Similar Part MCMA35P1600TA MCMA50P1600TA Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL 1 mA Marking on Product MCC26-14io1B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. 452823 Voltage class 1600 1600 T VJ = 125C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 9.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC26-14io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC26-14io1B Thyristor 104 800 60 ITSM = 50 Hz IFSM = 80% VRRM DC 180 sin 120 60 30 50 600 40 ITSM I2dt TVJ = 45C 103 400 30 TVJ = 125C TVJ = 45C [A] ITAVM [A] [A2s] 20 200 10 TVJ = 125C 102 0 0.01 0.1 1 0 1 10 t [s] 0 25 50 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 3 Max. forward current at case temperature Fig. 2 I t versus time (1-10 ms) 70 10 RthKA K/W 1.5 2 2.5 3 4 5 6 8 60 50 Ptot 40 20 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 5 VG 2 1 DC 180 sin 120 60 30 [W] 30 75 100 125 150 TC [C] t [ms] 3 1 [V] 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 10 IGD , T4 = 125C 0 0 10 20 30 40 0 25 50 ITAVM [A] 75 100 125 0.1 100 150 6 4 101 102 103 104 IG [mA] Ta [C] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 300 100 TVJ = 25C RthKA K/W 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 250 Circuit B6 3x MCC26 or 200 Ptot 3x MCD26 150 10 tgd [W] [s] 100 limit 1 typ. 50 0 0 20 40 60 0 25 IdAVM [A] 50 75 100 125 Ta [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC26-14io1B Thyristor 320 RthKA K/W Circuit W3 3x MCC26 or 3x MCD26 280 240 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 200 Ptot 160 [W] 120 80 40 0 0 20 40 60 0 25 IRMS [A] 50 75 100 125 150 Ta [C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 1.2 RthJC for various conduction angles d: 1.0 ZthJC 0.8 30 60 120 180 DC 0.6 [K/W] d RthJC [K/W] DC 0.88 180 0.92 120 0.95 60 0.98 30 1.01 0.4 Constants for ZthJC calculation: 0.2 0.0 10-2 10-1 100 101 i Rthi [K/W] 1 0.019 2 0.029 3 0.832 ti [s] 0.0031 0.0216 0.1910 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 1.4 RthJK for various conduction angles d: 1.2 1.0 30 60 120 180 DC 0.8 ZthJK d RthJK [K/W] DC 1.08 180 1.12 120 1.15 60 1.18 30 1.21 0.6 Constants for ZthJK calculation: [K/W] 0.4 0.2 0.0 10-2 10-1 100 101 i Rthi [K/W] 1 0.019 2 0.029 3 0.832 4 0.200 ti [s] 0.0031 0.0216 0.1910 0.4500 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. (c) 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d