Jul. 2005
MITSUBISHI HVIPM
PM1200HCE330-1
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................ 1200A
●VCES ....................................................... 3300V
●Insulated Type
●1-element in a Pack
●AISiC Baseplate
●Monolithic Gate Drive
●Protection Logic : OC/OT/UV
(Over Current / Over Temperature / Under supply Voltage)
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
PM1200HCE330-1
OUTLINE DRAWING Dimensions in mm
HVIPM (High Voltage Intelligent Power Module)
LABEL
CONTROL CONNECTOR
TERMINAL ARREANGEMENT
CONTROL CONNECTOR
CONTROL CONNECTOR FEMALE
TYPE: IL-AG5-6S-S3C1
NC
VC
CI
FO
V1
NC
5
4
3
2
6
1
CCC
EEE
EG
61.5
±0.3
57
±0.3
2.6
57
±0.3
190
±0.3
57
1745
±0.3
61.5
6-M8 NUTS
13
±0.3
124
±0.3
+1
0
140
±0.3
41
1123
15.85
18.3
40
(14)
(16.5)
(15) (15)
38
9.3
2-M3
Screwing 8 - φ6.5 MOUNTING HOLES
EMITTER
ELECTRODE
COLLECTOR
ELECTRODE
Screwing depth 16.5mm
36.9
30.9
27.1
29.6
HVIPM (High Voltage Intelligent Power Module)
Jul. 2005
MITSUBISHI HVIPM
PM1200HCE330-1
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIPM (High Voltage Intelligent Power Module)
C
E
F
O
CI
V
C
V
1
GE
IGBT
FWDi
OC/SC
OT
UV
ASIC
Control logic
Protection
logic
Input
interface
Connector
V
D
detector
Control circuit
ground
to control circuit
Thermal
sensor
Current
sensor
Main circuit
Gate driver
R.T.C
(Real Time Control)
VD
VCIN
VFO
IFO
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Applied between : V1–VC
Applied between : C1–VC
Applied between : FO–VC
Sink current of FO terminal
26.4
26.4
26.4
20.0
CONTROL PART
Symbol Item Conditions UnitRatings
V
V
V
mA
VCES
±IC
±ICP
PC
Viso
Tj
Tstg
Collector-emitter voltage
Collector current
Collector current (peak)
Maximum power dissipation
Isolation voltage
Junction temperature
Storage temperature
Tj = 25°C
TC = 25°C
TC = 25°C
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
3300
1200
2400
12500
6000
–40 ~ +150
–40 ~ +115
MAXIMUM RATINGS
INVERTER PART
Symbol Item Conditions UnitRatings
V
A
A
W
V
°C
°C
INTERNAL FUNCTIONS BLOCK DIAGRAM
HVIPM (High Voltage Intelligent Power Module)
Jul. 2005
ELECTRICAL CHARACTERISTICS
INVERTER PART
MITSUBISHI HVIPM
PM1200HCE330-1
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIPM (High Voltage Intelligent Power Module)
HVIPM (High Voltage Intelligent Power Module)
Control supply voltage
Circuit current
Input ON threshold voltage
Input OFF threshold voltage
Fault output pulse width
Over current trip level
Over temperature protection
Supply circuit under
voltage protection
Applied between : V1–VC
VD = 24V, Tj = 25°C
Applied between : C1–VC
VD = 24V
Tj = –25°C ~ 125°C
Baseplate temperature detection
Tj = –25°C ~ 125°C
V
mA
V
V
µs
A
°C
°C
V
V
Min Typ Max
26.4
120
7.3
11.7
200
—
123
108
20.8
—
24.0
80
6.7
11.1
100
—
113
98
20.0
20.5
21.6
—
6.1
10.5
—
2200
103
88
19.2
—
VD
ID
Vth(ON)
Vth(OFF)
tFO
OC
OT
Otr
UV
UVr
Symbol Item Conditions Limits Unit
CONTROL PART
VCE = VCES, Tj = 25°C
IC = 1200A, VD = 24V, VCIN = 0V
Tj = 25°C, at the main terminals
IC = 1200A, VD = 24V, VCIN = 0V
Tj = 125°C, at the main terminals
–IC = 1200A, VD = 24V, VCIN = 24V
Tj = 25°C, at the main terminals
–IC = 1200A, VD = 24V, VCIN = 24V
Tj = 125°C, at the main terminals
VCC = 1500V, IC = 1200A
VD = 24V, VCIN = 0V ↔ 24V
Tj = 125°C, Ls = 100nH
Inductive load
Min Typ Max
15
3.95
—
3.75
—
6.00
—
6.00
—
1.40
—
mA
V
V
µs
J/pulse
µs
J/pulse
µs
J/pulse
—
—
—
—
—
—
—
—
—
—
—
ICES
VCE(sat)
VEC
ton
Eon
toff
Eoff
trr
Erec
Symbol Item Conditions Limits Unit
Collector cutoff current
Collector-emitter saturation
voltage
Emitter-collector voltage
Turn-on time
Turn-on switching energy
Turn-off time
Turn-off switching energy
Reverse recovery time
Reverse recovery energy
—
3.05
3.40
2.90
2.80
—
1.80
—
1.60
—
0.95
Jul. 2005
MITSUBISHI HVIPM
PM1200HCE330-1
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIPM (High Voltage Intelligent Power Module)
HVIPM (High Voltage Intelligent Power Module)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
10.0
20.0
—
—
—
7.5
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
V
CC
V
D
V
CIN(ON)
V
CIN(OFF)
fPWM
tdead
Applied between : C–E terminals
Applied between : V1–VC
Applied between : C1–VC
3 sinusoidal PWM control
Reference at IPM’s input signals
V
V
V
V
kHz
µs
DC link voltage
Control supply voltage
Input ON voltage
Input OFF voltage
PWM input frequency
Dead time
Min Typ
1500
24.0
—
—
0.5
—
Max
2200
25.2
4.0
—
2.0
—
—
22.8
—
16.0
—
8.0
RECOMMENDED CONDITIONS FOR USE
Symbol Item Conditions Recommended values Unit
M
—
CTI
d
a
d
s
M8 : Main terminals screw
M6 : Mounting screw
M3 : Auxiliary terminals screw
N·m
kg
—
mm
mm
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Min Typ Max
13.0
6.0
0.6
—
—
—
—
—
—
—
1.5
—
—
—
7.0
3.0
0.4
—
600
19.5
32.0
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Jul. 2005
MITSUBISHI HVIPM
PM1200HCE330-1
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIPM (High Voltage Intelligent Power Module)
HVIPM (High Voltage Intelligent Power Module)
PERFORMANCE CURVES
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
NEGATIVE COLLECTOR CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
5
6
4
3
2
1
01200 16008004000 2000 2400
5
6
4
3
2
1
01200 16008004000 2000 2400
2.5
3
2
1.5
1
0.5
01200 16008004000 2000 2400
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (J/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10
1
10
2
10
0
10
-1
10
2
10
1
23 57 10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7V
CC = 1500V, VD = 24V
VCIN(on) = 0V ↔ 24V
Tj = 125°C, Inductive load
VCC = 1500V, VD = 24V
VCIN = 0V ↔ 24V
Tj = 125°C, Inductive load
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
tr
tf
toff
ton
Eoff
Erec
VD = 24V, VCIN = 0V, at the main terminals VD = 24V, VCIN = 24V, at the main terminals
Eon
Jul. 2005
MITSUBISHI HVIPM
PM1200HCE330-1
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIPM (High Voltage Intelligent Power Module)
HVIPM (High Voltage Intelligent Power Module)
1.2
1.0
0.8
0.6
0.4
0
0.2
3000
2500
2000
1500
1000
01000 20000 3000 4000
500
3000
2500
2000
1500
1000
01000 20000 3000 4000
500
NEGATIVE COLLECTOR CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT (A)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
EMITTER-COLLECTOR VOLTAGE (V)
REVERSE RECOVERY CURRENT (A)
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
123 57
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10-2
10-3
23 57
10-1
23 57
100
23 57
101
23 57
t
rr
I
rr
V
CC
= 1500V, V
D
= 24V
V
CIN
= 0V ↔ 24V
T
j
= 125°C, Inductive load
V
CC
≤ 2200V, V
D
= 24V
T
j
= 125°C
V
CC
≤ 2200V, di/dt ≤ 5400A/µs
T
j
= 125°C
Single Pulse, T
C
= 25°C
R
th(j–c)Q
= 10K/kW
R
th(j–c)R
= 20K/kW
