BC33716TA - ON SEMICONDUCTOR - Datasheet.Directory

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BC337 / BC338 — NPN Epitaxial Silicon Transistor

BC337 / BC338 Rev. 1.5

September 2015

BC337 / BC338

NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for AF-Driver Stages and Low-Power Output Stages

• Complement to BC327 / BC328

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

BC33716BU BC33716 TO-92 3L Bulk

BC33716TA BC33716 TO-92 3L Ammo

BC33716TFR BC33716 TO-92 3L Tape and Reel

BC33725BU BC33725 TO-92 3L Bulk

BC33725TA BC33725 TO-92 3L Ammo

BC33725TAR BC33725 TO-92 3L Ammo

BC33725TF BC33725 TO-92 3L Tape and Reel

BC33725TFR BC33725 TO-92 3L Tape and Reel

BC33740BU BC33740 TO-92 3L Bulk

BC33740TA BC33740 TO-92 3L Ammo

BC33825TA BC33825 TO-92 3L Ammo

Symbol Parameter Value Unit

VCES Collector-Emitter Voltage BC337 50 V

BC338 30

VCEO Collector-Emitter Voltage BC337 45 V

BC338 25

VEBO Emitter-Base Voltage 5 V

ICCollector Current (DC) 800 mA

TJJunction Temperature 150 °C

TSTG Storage Temperature -55 to 150 °C

1. Collector

123123

Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel

Ammo Packing

2. Base

3. Emitter

BC337 / BC338 — NPN Epitaxial Silicon Transistor

BC337 / BC338 Rev. 1.5 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

hFE Classification

Symbol Parameter Value Unit

PDPower Dissipation 625 mW

Derate Above 25°C5.0mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCEO Collector-Emitter

Breakdown Voltage BC337 IC = 10 mA, IB = 0 45 V

BC338 25

BVCES Collector-Emitter

Breakdown Voltage BC337 IC = 0.1 mA, VBE = 0 50 V

BC338 30

BVEBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 5 V

ICES Collector Cut-Off Curren t BC337 VCE = 45 V, IB = 0 2 100 nA

BC338 VCE = 25 V, IB = 0 2 100

hFE1 DC Current Gain VCE = 1 V, IC = 100 mA 100 630

hFE2 VCE = 1 V, IC = 300 mA 60

VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V

VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 300 mA 1.2 V

fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,

f = 50 MHz 100 MHz

Cob Output Capacitance VCB = 10 V, IE = 0,

f = 1 MHz 12 pF

Classification 16 25 40

hFE1 100 ~ 250 160 ~ 400 250 ~ 630

hFE2 60 ~ 100 ~ 170 ~

BC337 / BC338 — NPN Epitaxial Silicon Transistor

BC337 / BC338 Rev. 1.5 3

Physical Dimensions

Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

BC337 / BC338 — NPN Epitaxial Silicon Transistor

BC337 / BC338 Rev. 1.5 4

Physical Dimensions (Continued)

Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type

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Rev. I77

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