. : G E SOLID STATE O14 DE pj3a7soa. OOu74SO a Tt 5 : General-Purpose Power Transistors O1E 17450 D 7- 33 -/3 i , Tr BB R/ 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 File Number 678 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications * Features: & Maximum safe-area-of-operation curves TERMINAL DESIGNATIONS RCA-2N64862N6491e, inclusive, are epitaxial-base silicon transistors. The 2N6486, 2N6487, and 2N6488 are n-p-n complements of p-n-p types 2N6489, 2N6490, and { 2N6491, respectively, All these devices are intended fora c == c wide variety of medium-power switching and amplifier (FLANGE) OC eel applications, and are particularly useful in high-fidelity am- plifiers utilizing complementary-symmetry circuits. a TOP VIEW 8 These devices are supplied in the TO-220AB (VERSA- eecs-a9080 WATT) plastic package. *Formarly RCA Dev. Nos. TA8325, TA8324, TA8323, TA8328, JEDEC TO-220AB TA8327, and TA8326, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: N-P-N 2N6486 2N6487 2N6488 P-N-P 2N6489t 2N6490T 2N6491+ *COLLECTOR-TO-BASE VOLTAGE.......... see Veso 50 70 90 Vv COLLECTOR-TO-EMITTER VOLTAGE: * With 1.5 volts (Vee) of reverse bias, and external base-to-emitter resistance (Rac) = 100 ...... Voex 50 70 90 Vv With external base-to-emitter resistance (REE) = 1000 ..... ccc e reece verve Voer 45 65 85 v With base Ope@n........cesceae ee i" Voce 40 60 80 v EMITTER-TO-BASE VOLTAGE Veso 5 5 Vv - CONTINUOUS COLLECTOR CURRENT........ Ic 15 16 15 A CONTINUOUS BASE CURRENT .............. Ip 5 5 5 A TRANSISTOR DISSIPATION: Pr At case temperatures up to 25C 57 75 75 Ww At ambient temperatures up to 25C 1.8 1.8 1.8 Ww 7 At case temperatures above 25C Derate linearly 0.6 W/G At ambient temperatures above 25C Derate linearly 0.0144 W/C *TEMPERATURE RANGE: Storage and operating (Junctlon)......e.ceee. 85 to +150 *LEAD TEMPERATURE (During soldering): At distance = 1/8 In. (3.17 mm) from seating plane for 10S MAX. ...... cee e er eeees 235 C * In accordance with JEDEC registration data format JS-6 RDF-2. t For p-n-p devices, voltage and current values are negative. 454ae G E SOLID STATE 3875081 GE SOLID STATE On DE 3a7soa1 OoU74usSE y i 2N6486, 2N6487, 2N6488, 2N6489, 2N O1E 17451 General-Purpose Power Transistors ELECTRICAL CHARACTERISTICS, At case temperature (Tc) = 25C unless otherwise specified DT 337/3 6490, 2N6491 )- 332) TEST CONDITIONS LIMITS VOLTAGE |CURR 2N6486 2N6487 2N6488 i CHARACTERISTIC SYMBOL Vide Ade | _2N6489 | 2N649060 2neagie | UNITS Vee | Yee le Min. Max. | Min. | Max. Min. Max, Collector-Cutoff Current: 35 - 500 - - - - With external base-emitter icER 55 ~ - - 500 - - uA resistance (Rap) = 1000 75 - - - - - 500 With base-emitter junction reverse 45 -15 ~- 500 - ~ - - biased and external base-to-emitter 65 15 - - - | 800 - ~ nA resistance (Rael = 1000 \ 85 ~15 - - - - - 500 CEX 40 -1.5 - 5 - - - - AtTo= 150 C 60 -1.5 - - = 5 - - mA 80 -1.5 - - - - - 5 20 - 1 - - - - With base open loco 30 ~ - - 1 - ~ mA 40 - - - - - i Emitter-Cutoff Current. teBo -5 0 - 1 - 1 ~ 1 mA OC Forward-Current h 4 58 20 150 20 | 150 20 150 Transfer Ratio FE 4 158 5 _ 5 - 5 - Collector-to-Emitter Sustaining Voltage Vegolsus) 0.2 405 | 60b - gob - With base open With external base-emitter b b b resistance [Ree) = 1002 Voer(sus} 0.2 45 {65 - 85 - v With base-emitter junction reverse- biased and external base-to-amitter | Vogy (sus) -1.5 | 0.2 50 | 70b = gob ~ resistance (Rag) = 100% . 4 58 ~- 143 - 1,3 - 1,3 Base-to-Emitter Voltage Vee 4 188 _ 35 -~ | 35 _ 35 Vv Collector-to-Emitter IprO5A Vartsat) 5a - 1.3 - 1.3 - 13 Saturation Voltage Ige5SA cefsat 198 - 3.5 - | 35 - 3.5 v Magnitude of Common-Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio; | Me | 4 ' 5 7 5 7 5 ~ f= 1 MHz Common-Emitter, Smali-Signal, Short-Circuit, Forward-Current Hie 4 1 25 - | 25 - 25 - Transfer Ratio {f = 1 kHz) Therma! Resistance . Junction-to-case Resc - 1.67 - 1.67 - 1.67 ciW dunction-to-ambient Paya - - 710 ~ 70 * (n accordance with JEDEC registration data format (JS-6 RDF-2}. cauTION: Sustaining voltages Vogg(susl, Vogptsus} Pulsed: pulse duration = 300 us, duty factor = 1.8%. MUST NOT be measured on a curve tracer. .and Vogytlsus) * For p-n-p devices, voltage and current values are negative, 455G E SOLID STATE Dl DE pze7soa1 OO4u74S2 4 Tr 3875081 G E SOLID STATE "ote i7as2. 0 TSSIS General-Purpose Power Transistors , 7-232) * 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 4| GASE TEMPERATURE (Tc) 25C (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) PULSE OPERA OC OPERATION * FOR SINGLE NONREPETITIVE PULSE COLLECTOR CURRENT (Ic)--A -40V (2N6489 +40V (2N6486) -60V (2N6490) +60V (2N6487) -80V (2N6491) +8OV (2N6488) VoEo MAX, = Voeo MAX.# VcEo MAX.* I 2 4 6 8 Ig 2 490 60 80 100 2 COLLECTOR ~-TO-EMITTER VOLTAGE (Vce)V 92CS - 22805 Fig, 1 Maximum operating areas tor alt typest. -100 = 50 $B w 18 m nm CASE TEMPERATURE (Te)"C a2cs-1s998 Fig. 2 Derating chart lor all types t For p-n-p devices, voltage and current values are negative. iiG E SOLID STATE OL DE 3875081 on1zyss 4 a _ ee ~ OTE 17453. OD T3313 7 3875081 GE SOLID STATE General-Purpose Power Transistors ____ 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 TEMPERATURE CASE TEMPERATURE wax, (| purse operation * Yoeo MAX. v +60 Voeo MAX. DEG y +t0V COLLECTOR CURRENT (Ic]A z 3 a Voeg MAX." Dany 1 10 40 60 80 100 azcs-22008 COLLECTOR CURRENT {Iga stes-es7 Fig. 3 Maximum operating areas for all typast. Fig. 4 Typical coilector-to-emitter saturation-voltage characteristics for all types. COLLECTOR-TO-EMITTER VOLTAGE (Veg}e 4 COLLECTOR-TO-EMITTER VOLTAGE {c_els-4V TEMPERATURE -0.1 1 =10 COLLECTOR CURRENT [Z]~A COLLECTOR CURRENT (Ig )A 92CS- 223592 9208-10574R) Fig, 5 Typical de beta characteristics for 2N6486, 2N6487, Fig. 6 Typical de beta characteristics for 2N6489, 2NG490, and 2N6488, and 2N6491. CASE TEMPERATURE (Toho 25C COLLECTOR CURRENT (Ig}-A GAIN SANDWIDTH PRODUCT (fy}matz ' 2 wb . GASE-TO-EMITTER VOLTAGE Weel oueatn COLLECTOR CURRENT (IlA snee-azens Fig. 7 Minimum reverse-blas second-breakdown characteristics Fig, 8 Typical gain-bandwidth product ys. collector current for for all typest. all typest. t For p-n-p devices, voltage and current values are negative. 457_ E SOLID STATE OL DE 3875081 oo174sy o , : 3875081 GE SOLID STATE O1E 17454 po T3313 b General-Purpose Power transistors F-43-2] >" 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 < i a 3 E 5 3 2 4 3 B a COLLECTOR CURRENT (Ic) A BASE-TO-EWT TER VOLTAGE [Vpg)V secseazeer COLLECTOA-TO-EM:TTER VOLTAGE Neel user cs Fig. 9 Typical input characteristics for all typest. Fig. 10 Typical output characteristics for all typest. COLLECTOR-TO-EMITTER VOLTAGE ! t GBASE-TO-EMITTER VOLTAGE (ge)V 92cs-22398 Fig. 11 -- Typical transfer characteristics for ail typest. PULSE DURATION*20u5 REPETITION RATE= RATE +500 PULSES /6 COLLECTOR SUPPLY VOLTAGE (Veg)e30V SUPPLY VOLTAGE (Voch= CASE {te h2s*c CASE TEMPERATURE (To) *25"C Ta, *To2* Ig, *Zag'lc 40 a SWITCHING TIME = ys 2 z e eg Zz z 3 z x a COLLECTOR CURRENT [Ih~ a secsez2as0 COLLECTOR CURRENTIT}A e2cs-19581 Fig, 12 Typical saturated switching characteristics for Fig. 13 Typical saturated switching characteristics for 2N6486, 2N6487, and 2N6488. 2N6489, 2N6490, and 2N6491. t For p-n-p devices, voltage and currant values are negative.6 E SOLID STATE 367S081 OOL74SS Tr 3875081 G E SOLID STATE cop O1E 17455 D T-33-/ General-Purpose Power Transistors 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 O-*28V O me30V PULSE GENERATOR 5 HEWLETT-PACKARD & NO 214A, e OR EQUIVALENT 3 23 uF (vr y PULSE OURA- o TION 2 20 wt REP RATE sia tke ee = Oz 83 at Se o2 AL INON -INDUCTIVE) oo 30,12W FOR tc HOA |r fete 3750, @w FOR ICs 8a =k t Sf, OW FOR Ig 664 500 a, tg } . 75.0, 8 FOR Igeaa Le Usa sees 24900 470 -6 9208-24801 Fig. 14 Circuit used to measure switching times for 2N6486, Fig. 15 Phase relationship between input and output currents 2N6487, and 2N6438. showing reference points for specitication of switching iimas (test circuit shown in Fig. 14). et. Vee N -5 10-20 TeRTRONK TYE Tee a4, O Ocg "7 20 OR EQUIVALEN PULSE DURATION 220ue REPETITION 12pF RATE ttkHz outfut To 6 OSCILLOSCOPE, gu = TEXTRONIX 3 & Lk No S484 OF 3G EQUIVALENT E i rE O& CONDITION ' EF vetsan 90% oy t & 10% TIME es ste fe I le OUTPUT o3 age 2 el WAVE FORM O 4 3 TURN-ON}e- rh. Vegtt2 TO +10 8 IME Fie 92cs-195487 "Ac 1S CHOSEN FOR Ic * Vee ANO Van ARE MEASURED FOR Ip, 4NO lag Ta, ANO Tao ARE MEASURED WITH TEKTRONIX CURRENT PROBE P-019 AND TYPE 134 AMPLIFIER,OR EQUIVALENT F2CS-195 BERS Fig. 16 Circuit used to measure switching times for 2N6489, Fig. 17 Oscilloscope display for measurement tor switching times 2N6490, and 2N6491. (tast circuit shown in Fig. 16), Yoo 20-t 75 10 4 tw 28 mH SIGHAL TRANSFORMER ---|; Go. SHSO OF EQUIV. 5 Veeotur Veentsus) Voex ton 63y | w 60H 36 tae2sw VERT g. : (WON-INDUCTIVE) OSCILLOSCOPE af Gann iNeUT j CHOPPER TYPE HEWLETT-PAGKARO 7, -200 BBN ool 48 S - MERCURY RELAY GHO.[ MOOEL No 1308 se cane tozeon 2neas9* OR EQUIVALENT gn EQUIVALENT 3 40-60-80 0-45-85 +65 0 -30-70-390 100 8 8 COLLECTOR~TO-EMITTER VOLTAGE (Veg)-V w le Veeo tus) S PULSE CURRENT (Ip) RANGE* 06-0.0 4 a *Vec THE SUSTAINING VOLTAGES Veeginnl, Vcen(aal, AND Vos y {ma} ARE ACCEFTASLE WHEN ve Tsusd THE TRACES FALL TO THE RIGHT AND ABOVE POINT A FOR TYPES eee Voex (rusk g YCER POINT ~B" FOR 2NEAS? AND ZNEATO, AND POINT C FOR 284468 AND Lov Ls S2e$- 2201 S FOR N-PeN TYPES 246466, 2N6487,AND Z2NG486, REVERSE POLARITY OF BATTEAY AND Veg $2C5-22610 Fig, 18 Circuit used to measure sustaining voltages Vceof{sus), Fig. 19 Oscilloscope display for measurement of sustaining Veer(sus), and Vcex(sus) for all types. voltages (test circuit shown in Fig. 18). 459 OTT