MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large-signal, common emitter class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR * Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power -- 60 Watts (PEP) Power Gain -- 9 dB Efficiency -- 33% Intermodulation Distortion -- -30 dBc * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power * Designed for FM, TDMA, CDMA and Multi-Carrier Applications CASE 451-06, STYLE 1 (MRF20060R) * Test Fixtures Available at: http://mot-sps.com/rf/designtds/ Note: Not suitable for class A operation. CASE 451A-03, STYLE 1 (MRF20060RS) MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector-Emitter Voltage VCES 60 Vdc Collector-Base Voltage VCBO 60 Vdc Collector-Emitter Voltage (RBE = 100 Ohm) VCER 30 Vdc Collector-Emitter Voltage (IB = 0 mA) Base-Emitter Voltage VEB -3 Vdc Collector Current - Continuous IC 8 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.7 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case REV 3 RF DEVICE DATA MOTOROLA Motorola, Inc. 2000 MRF20060R MRF20060RS 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 25 28 -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 69 -- Vdc Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 60 69 -- Vdc Reverse Base-Emitter Breakdown Voltage (IB = 10 mAdc, IC = 0) V(BR)EBO 3 3.5 -- Vdc ICES -- -- 10 mAdc hFE 20 40 80 -- Cob -- 55 -- pF Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gpe 9 9.8 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 33 35 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- - 32 - 30 dB Input Return Loss (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 12 19 -- dB Characteristic OFF CHARACTERISTICS Zero Base Voltage Collector Leakage Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, IC = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MRF20060R MRF20060RS 2 MOTOROLA RF DEVICE DATA VBB R1 L5 Q2 L1 D1 B1 L3 C7 C9 + Q1 C12 C6 C3 C1 C8 R2 + R4 C10 VCC C14 C15 R3 L4 L2 Z6 RF INPUT Z1 Z3 Z4 Z7 Z9 C4 Z10 Z5 C11 C2 B1 C1 C2, C4, C13 C3, C14 C5 C6, C12 C7, C9 C8, C10 C11 C15 Z2 C5 Ferrite Bead, P/N 5659065/3B, Ferroxcube 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4.0 pF, Variable Capacitor, Gigatrim, Johanson 0.1 F, Chip Capacitor, Kemit 15 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 13 pF, B Case Chip Capacitor, ATC 470 F, 50 V, Electrolytic Capacitor, Mallory DUT D1 L1, L5 L2, L4 L3 R1 R2 R3, R4 Q1 Q2 Board RF OUTPUT C13 Diode, Motorola (MURS160T3) 12 Turns, 22 AWG, 0.140 Choke .5 inch of 20 AWG 12.5 nH Inductor 2 x 130 , 1/8 W Chip Resistor, Rohm 2 x 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon, Arlon GX-0300-55-22, r Figure 1. 1.93 - 2 GHz Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 3 11.5 70 60 11 60 Pout 10.5 10 40 Gpe 9.5 30 9 20 VCC = 26 Vdc ICQ = 200 mA f = 2000 MHz Single Tone 10 8.5 2 0 6 4 Pin, INPUT POWER (WATTS) 8 40 3W 30 20 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 3. Output Power versus Frequency - 20 -10 10.5 3rd Order -15 10 - 30 Gpe 5th Order 9.5 -20 9 -25 G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) VCC = 26 Vdc ICQ = 200 mA 0 1800 Figure 2. Output Power & Power Gain versus Input Power - 40 7th Order - 50 8.5 VCC = 26 Vdc ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz - 60 - 70 0 10 -30 Pout = 60 W (PEP) ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 8 30 50 60 40 Pout, OUTPUT POWER (WATTS) PEP 20 70 80 7.5 18 Figure 4. Intermodulation Distortion versus Output Power IMD -35 20 22 24 26 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) -40 28 Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage 11 - 20 ICQ = 600 mA ICQ = 100 mA - 25 10 G pe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 5W 50 10 8 10 0 Pin = 7 W IMD, INTERMODULATION DISTORTION (dBc) 50 Pout , OUTPUT POWER (WATTS) 70 G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS - 30 200 mA - 35 - 40 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 400 mA - 45 600 mA - 50 0.1 1.0 10 400 mA 9 8 7 100 6 0.1 200 mA VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF20060R MRF20060RS 4 100 MOTOROLA RF DEVICE DATA Gpe G pe , GAIN (dB) 9.5 36 9 34 8.5 32 VSWR 8 1900 1920 1940 1960 f, FREQUENCY MHz) 1980 28 2000 COLLECTOR EFFICIENCY (%) 38 Pout = 60 W (PEP) VCC = 26 Vdc ICQ = 200 mA 1.3:1 INPUT VSWR 10 1.2:1 1.1:1 Figure 8. Performance in Broadband Circuit MTBF FACTOR (HOURS x AMPS 2 ) 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250 This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 9. MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 5 + j1 + j0.5 + j2 f = 1.8 GHz Zin 1.85 GHz f = 1.8 GHz + j0.2 ZOL* 1.85 GHz + j3 1.9 GHz 1.95 GHz 2 GHz 2 GHz + j5 1.95 GHz 1.9 GHz + j10 Zo = 10 0.2 0.0 0.5 1 2 3 5 - j10 - j5 - j0.2 - j3 - j2 - j0.5 - j1 VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz Zin(1) ZOL* 1800 1.0 + j4.8 1.7 + j3.3 1850 1.5 + j4.8 2.2 + j2.7 1900 2.0 + j4.7 2.4 + j3.0 1950 2.5 + j4.7 2.3 + j3.2 2000 3.5 + j4.7 2.0 + j3.4 Zin(1)= Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedence MRF20060R MRF20060RS 6 MOTOROLA RF DEVICE DATA Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 3.5 Adc f GHz S11 S21 f 1.5 0.986 168 0.32 81 0.031 1.55 0.985 167 0.35 76 1.6 0.981 167 0.40 70 1.65 0.973 166 0.45 |S21| f S12 |S11| f S22 |S22| f 60 0.923 169 0.031 63 0.918 169 0.032 61 0.908 169 63 0.030 53 0.897 169 |S12| 1.7 0.968 165 0.52 56 0.033 50 0.889 168 1.75 0.951 163 0.62 46 0.028 47 0.880 169 1.8 0.914 161 0.76 32 0.027 39 0.871 170 1.85 0.851 161 0.91 12 0.024 26 0.863 171 1.9 0.789 164 1.02 -15 0.015 5 0.888 174 1.95 0.810 170 0.94 -44 0.005 -7 0.931 174 2 0.880 172 0.75 -68 0.006 -151 0.953 172 2.05 0.934 170 0.57 -85 0.010 152 0.967 170 2.1 0.964 168 0.45 -98 0.015 158 0.965 169 2.15 0.977 165 0.36 -109 0.022 164 0.955 168 2.2 0.975 163 0.30 -118 0.033 165 0.950 167 2.25 0.961 161 0.25 -128 0.049 160 0.947 167 2.3 0.942 160 0.22 -139 0.066 149 0.938 166 2.35 0.919 157 0.19 -149 0.077 142 0.931 165 2.4 0.860 156 0.17 -163 0.100 137 0.922 165 2.45 0.821 159 0.15 177 0.128 122 0.914 165 2.5 0.781 161 0.14 157.0 0.156 108 0.907 165 MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 7 NOTES MRF20060R MRF20060RS 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 9 NOTES MRF20060R MRF20060RS 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. G 1 -B- R DIM A B C D E F G H K N Q R 3 2 Q K 0.25 (0.010) N H 2 PL D M T A M B M F E C -T- -A- SEATING PLANE CASE 451-06 ISSUE F (MRF20060R) -B- 2 D N H E F C -A- -T- SEATING PLANE 3 CASE 451A-03 ISSUE B (MRF20060RS) MOTOROLA RF DEVICE DATA MILLIMETERS MIN MAX 25.27 25.53 9.65 9.91 3.96 4.85 11.56 11.81 1.52 1.91 0.10 0.15 20.32 BSC 1.98 2.29 2.97 3.48 15.11 15.37 3.05 3.30 10.03 10.41 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. 1 K INCHES MIN MAX 0.995 1.005 0.380 0.390 0.156 0.191 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130 0.395 0.410 DIM A B C D E F H K N INCHES MIN MAX 0.615 0.625 0.395 0.410 0.156 0.191 0.455 0.465 0.060 0.075 0.004 0.006 0.078 0.090 0.117 0.137 0.595 0.605 MILLIMETERS MIN MAX 15.62 15.88 10.03 10.41 3.96 4.85 11.56 11.81 1.52 1.91 0.10 0.15 1.98 2.29 2.97 3.48 15.11 15.37 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER MRF20060R MRF20060RS 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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