1
MRF20060R MRF20060RSMOTOROLA RF DEVICE DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060R and MRF20060RS are designed for class AB broadband
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for large–signal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
•Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
•Characterized with Series Equivalent Large–Signal Impedance Parameters
•S–Parameter Characterization at High Bias Levels
•Excellent Thermal Stability
•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
•Designed for FM, TDMA, CDMA and Multi–Carrier Applications
•Test Fixtures Available at: http://mot–sps.com/rf/designtds/
Note: Not suitable for class A operation.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage (IB = 0 mA) VCEO 25 Vdc
Collector–Emitter V oltage VCES 60 Vdc
Collector–Base Voltage VCBO 60 Vdc
Collector–Emitter V oltage (RBE = 100 Ohm) VCER 30 Vdc
Base–Emitter Voltage VEB –3 Vdc
Collector Current – Continuous IC8 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD250
1.43 Watts
W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.7 °C/W
Order this document
by MRF20060R/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF20060R
MRF20060RS
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–06, STYLE 1
(MRF20060R)
CASE 451A–03, STYLE 1
(MRF20060RS)
Motorola, Inc. 2000
REV 3
MRF20060R MRF20060RS
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0) V(BR)CEO 25 28 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0) V(BR)CES 60 69 — Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0) V(BR)CBO 60 69 — Vdc
Reverse Base–Emitter Breakdown Voltage
(IB = 10 mAdc, IC = 0) V(BR)EBO 3 3.5 — Vdc
Zero Base V oltage Collector Leakage Current
(VCE = 30 Vdc, VBE = 0) ICES — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 5 Vdc, IC = 1 Adc) hFE 20 40 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) Cob — 55 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 60 W atts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gpe 9 9.8 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 60 W atts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η33 35 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 60 W atts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD —–32 –30 dB
Input Return Loss
(VCC = 26 Vdc, Pout = 60 W atts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL 12 19 — dB
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 W atts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψNo Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
3
MRF20060R MRF20060RSMOTOROLA RF DEVICE DATA
Figure 1. 1.93 – 2 GHz Test Fixture Electrical Schematic
B1 Ferrite Bead, P/N 5659065/3B, Ferroxcube
C1 100 µF, 50 V, Electrolytic Capacitor, Mallory
C2, C4, C13 0.6–4.0 pF, Variable Capacitor, Gigatrim, Johanson
C3, C14 0.1 µF, Chip Capacitor, Kemit
C5 15 pF, B Case Chip Capacitor, ATC
C6, C12 1000 pF, B Case Chip Capacitor, ATC
C7, C9 91 pF, B Case Chip Capacitor, ATC
C8, C10 24 pF, B Case Chip Capacitor, ATC
C11 13 pF, B Case Chip Capacitor, ATC
C15 470 µF, 50 V, Electrolytic Capacitor, Mallory
D1 Diode, Motorola (MURS160T3)
L1, L5 12 T urns, 22 AWG, 0.140″ Choke
L2, L4 .5 inch of 20 A WG
L3 12.5 nH Inductor
R1 2 x 130 Ω, 1/8 W Chip Resistor, Rohm
R2 2 x 100 Ω, 1/8 W Chip Resistor, Rohm
R3, R4 10 Ω, 1/2 W, Resistor
Q1 T ransistor, PNP Motorola (BD136)
Q2 T ransistor, NPN Motorola (MJD47)
Board Glass Teflon, Arlon GX–0300–55–22, ε
r
RF
INPUT
RF
OUTPUT
DUT
Z10
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z9
VBB
VCC
Q2
Q1
D1
R1
C1 C3 C6
R3
L1 L3
R2
C7
C8
L2
C5
C2 C4
C9
C10
L4
C13
B1
C12 C14 C15
R4
L5
C11
++
MRF20060R MRF20060RS
4MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Gpe, POWER GAIN (dB) Gpe, GAIN (dB)
Figure 2. Output Power & Power Gain
versus Input Power
60
Pin, INPUT POWER (W ATTS)
10
04
20
40
30
Figure 3. Output Power versus Frequency
01850 f, FREQUENCY (MHz)
70
40
10
2610
60
Pout, OUTPUT POWER (WATTS)
1800 20000
Pout, OUTPUT POWER (WATTS)
50
11
10
9
8
Gpe, GAIN (dB)
1900 1950
Figure 4. Intermodulation Distortion
versus Output Power
–20
Pout, OUTPUT POWER (WATTS) PEP
–70 40
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
10
VCC, COLLECTOR SUPPLY VOLT AGE (Vdc)
9
20 60 80
8
IMD, INTERMODULA TION DISTOR TION (dBc)
Figure 6. Intermodulation Distortion
versus Output Power
0.1 Pout, OUTPUT POWER (WATTS) PEP
–35
–50 10
–25
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
61.0
10
10
1.0 100 1000.1
0
7
8
9
9.5
8.5
7.5 20 2218
–40
–30
–20
IMD, INTERMODULA TION DISTOR TION (dBc)
–40
–35
IMD, INTERMODULA TION DISTOR TION (dBc)
VCC = 26 Vdc
ICQ = 200 mA
f = 2000 MHz Single Tone
70
24 26 28
11
10.5
–30
–25
–20
–15
–10
–60
–50
–40
–30
20
50
30
Pout = 60 W (PEP)
ICQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
Gpe
IMD
Gpe
Pout
3rd Order
7th Order
5th Order
Pin = 7 W
5 W
600 mA
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
400 mA
200 mA
ICQ = 100 mA
VCC = 26 Vdc
ICQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
8
–45
3010 50 70
100 mA
ICQ = 600 mA
400 mA
200 mA
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
11.5
10.5
9.5
8.5
3 W
VCC = 26 Vdc
ICQ = 200 mA
5
MRF20060R MRF20060RSMOTOROLA RF DEVICE DATA
Figure 8. Performance in Broadband Circuit
f, FREQUENCY MHz) 20001960194019201900
10
9
8.5
8
38
34
32
28
COLLECTOR EFFICIENCY (%)INPUT VSWR
Gpe, GAIN (dB)
1.3:1
1.2:1
1.1:1
9.5 36
Gpe
VSWR
η
Pout = 60 W (PEP)
VCC = 26 Vdc
ICQ = 200 mA
1980
Figure 9. MTBF Factor versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) 250200150100500
1.E+11
1.E+10
1.E+08
1.E+07
1.E+06
1.E+05
MTBF F ACTOR (HOURS x AMPS )
This above graph displays calculated MTBF in hours x ampere2
emitter curent. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by IC2 for MTBF in a particular application.
1.E+09
2
MRF20060R MRF20060RS
6MOTOROLA RF DEVICE DATA
Figure 10. Series Equivalent Input and Output Impedence
f
MHz Zin(1)
ΩZOL*
Ω
1800
1850
1900
1950
1.0 + j4.8
2.0 + j4.7
1.5 + j4.8
2.5 + j4.7
1.7 + j3.3
2.2 + j2.7
2.4 + j3.0
2.3 + j3.2
Zin(1)= Conjugate of fixture base terminal impedance.
ZOL* = Conjugate of the optimum load impedance at
given output power, voltage, bias current and
frequency.
VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP)
+j1
+j2
+j3
+j5
+j0.5
+j0.2
–j1
–j2
–j3
–j5
–j10
–j0.5
–j0.2
+j10
0.0 0.5 12
3 5
ZOL*
Zin
Zo = 10 Ω
1.85 GHz 1.95 GHz
2 GHz
1.9 GHz
f = 1.8 GHz
2000 3.5 + j4.7 2.0 + j3.4
f = 1.8 GHz
1.9 GHz
1.95 GHz
2 GHz
1.85 GHz
0.2
7
MRF20060R MRF20060RSMOTOROLA RF DEVICE DATA
Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 3.5 Adc
fS11 S21 S12 S22
GHz |S11|
f
|S21|
f
|S12|
f
|S22|
f
1.5 0.986 168 0.32 81 0.031 60 0.923 169
1.55 0.985 167 0.35 76 0.031 63 0.918 169
1.6 0.981 167 0.40 70 0.032 61 0.908 169
1.65 0.973 166 0.45 63 0.030 53 0.897 169
1.7 0.968 165 0.52 56 0.033 50 0.889 168
1.75 0.951 163 0.62 46 0.028 47 0.880 169
1.8 0.914 161 0.76 32 0.027 39 0.871 170
1.85 0.851 161 0.91 12 0.024 26 0.863 171
1.9 0.789 164 1.02 –15 0.015 5 0.888 174
1.95 0.810 170 0.94 –44 0.005 –7 0.931 174
2 0.880 172 0.75 –68 0.006 –151 0.953 172
2.05 0.934 170 0.57 –85 0.010 152 0.967 170
2.1 0.964 168 0.45 –98 0.015 158 0.965 169
2.15 0.977 165 0.36 –109 0.022 164 0.955 168
2.2 0.975 163 0.30 –118 0.033 165 0.950 167
2.25 0.961 161 0.25 –128 0.049 160 0.947 167
2.3 0.942 160 0.22 –139 0.066 149 0.938 166
2.35 0.919 157 0.19 –149 0.077 142 0.931 165
2.4 0.860 156 0.17 –163 0.100 137 0.922 165
2.45 0.821 159 0.15 177 0.128 122 0.914 165
2.5 0.781 161 0.14 157.0 0.156 108 0.907 165
MRF20060R MRF20060RS
8MOTOROLA RF DEVICE DATA
NOTES
9
MRF20060R MRF20060RSMOTOROLA RF DEVICE DATA
NOTES
MRF20060R MRF20060RS
10 MOTOROLA RF DEVICE DATA
NOTES
11
MRF20060R MRF20060RSMOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 451–06
ISSUE F
CASE 451A–03
ISSUE B
(MRF20060R)
(MRF20060RS)
M
A
M
0.25 (0.010) B M
T
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.995 1.005 25.27 25.53
B0.380 0.390 9.65 9.91
C0.156 0.191 3.96 4.85
D0.455 0.465 11.56 11.81
E0.060 0.075 1.52 1.91
F0.004 0.006 0.10 0.15
G0.800 BSC 20.32 BSC
H0.078 0.090 1.98 2.29
K0.117 0.137 2.97 3.48
N0.595 0.605 15.11 15.37
Q0.120 0.130 3.05 3.30
R0.395 0.410 10.03 10.41
SEATING
Q
C
R
K
G
D
N
E
H
–A–
–T–
–B–
PLANE
2 PL
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030” AWAY FROM
FLANGE.
2
1
3
–B–
D
K
HEN
3
F
C
2
1
–A–
–T– SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.615 0.625 15.62 15.88
B0.395 0.410 10.03 10.41
C0.156 0.191 3.96 4.85
D0.455 0.465 11.56 11.81
E0.060 0.075 1.52 1.91
F0.004 0.006 0.10 0.15
H0.078 0.090 1.98 2.29
K0.117 0.137 2.97 3.48
N0.595 0.605 15.11 15.37
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030” AWAY FROM
FLANGE.
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
MRF20060R MRF20060RS
12 MOTOROLA RF DEVICE DATA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer .
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MRF20060R/D
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