114
Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor)
Application : Switching Regulator, Lighting Inverter and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4546
600
400
7
7(Pulse14)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Absolute maximum ratings
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4546
100max
100max
400min
10to25
0.7max
1.3max
10typ
55typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=600V
VEB=7V
IC=25mA
VCE=4V, IC=3A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC4546
(Ta=25°C) (Ta=25°C)
ICVCE Characteristics
(Typical)
hFEIC Temperature Characteristics (Typical)
ton•tstg•tfIC Characteristics
(Typical)
θj-at Characteristics
ICVBE Temperature Characteristics
(Typical)
VCE(sat)IC Characteristics (Typical)
PcTa Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.02 0.05
0.1 0.5 1 105
0
0.5
1.0
Collector Current IC(A)
IC/IB=5 Const.
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
7
6
5
4
3
2
1
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.2 10.5 5
0.02
0.1
0.05
0.5
2
1
Switching Time ton•tstg•tf(µs)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC:IB1:IB2=5:1:–2 0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
30
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 50 700500100
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
10 50 100 700500
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
100µs
Without Heatsink
Natural Cooling
0.02 0.10.05 1 750.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–30˚C
0
0
2
1
7
3
4
5
6
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
1A
800mA
400mA
600mA
300mA
200mA
IB=50mA
Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
()
67
IC
(A)
3
VBB2
(V)
–5
IB2
(A)
–1.2
ton
(
µ
s)
0.5max
tstg
(
µ
s)
2max
tf
(
µ
s)
0.15max
IB1
(A)
0.6
VBB1
(V)
10
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0±0.2
16.9±0.3
13.0min
8.4±0.2
0.8±0.2
3.9
±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8 c0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.